IEEE Electron Device Letters

Issue 11 • Nov. 1980

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Displaying Results 1 - 9 of 9
  • [Front cover and table of contents]

    Publication Year: 1980, Page(s): c1
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    Freely Available from IEEE
  • Sensitive technique for measuring small MOS gate currents

    Publication Year: 1980, Page(s):231 - 233
    Cited by:  Papers (28)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (280 KB)

    A simple but ultrasensitive method for measuring MOS gate currents down to the attoampere range has been developed. The new technique routinely measures oxide currents in conventional MOSFET structures arising from effects such as hot-electron emission, oxide leakage or tunneling at levels too low to be easily detected by previously available techniques. No FAMOS-type device is required. This tech... View full abstract»

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  • Possible ballistic effects in GaAs current limiters

    Publication Year: 1980, Page(s):234 - 235
    Cited by:  Papers (10)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (264 KB)

    Two-terminal N+NN+ current limiters have been fabricated in GaAs by selective ion-implantation of the N+ and N regions into undoped substrate material. Voltage-current characteristics have been measured at 77°K, 300°K and 400°K and reveal current limiting properties above about 0.8 to 1.0 volts at all three temperatures. In the voltage range below 0.7 volts a relation of I ~ V{... View full abstract»

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  • Nb/GaAs super-Schottky diode

    Publication Year: 1980, Page(s):236 - 238
    Cited by:  Patents (3)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (424 KB)

    A super-Schottky contact diode made of Nb on heavily doped p-GaAs has been fabricated by electron-beam deposition under high vacuum, resulting in a rugged device having very reliable characteristics with detector current sensitivity S ≃ 1500 V-1and estimated NEP ≃ 1.2 × 10-15W/√HZ at 4.2 K under the optimum bias conditions. View full abstract»

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  • High efficiency polycrystalline silicon solar cells by continuous plasma deposition and laser recrystallization

    Publication Year: 1980, Page(s):239 - 241
    Cited by:  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (376 KB)

    Solar cells of up to 12% efficiency have been fabricated on laser recrystallized fine grain polycrystalline silicon films produced by high pressure plasma (hpp) aided hydrogen reduction of trichlorosilane. The hpp system was operated in a continual mode to produce microcrystalline silicon films continually using finite size temporary molybdenum substrates. The major improvement over previous devic... View full abstract»

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  • High-efficiency stripe-geometry InGaAsP DH lasers (λ = 1.3 µm) with chemically-etched mirrors

    Publication Year: 1980, Page(s):242 - 243
    Cited by:  Papers (2)  |  Patents (2)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (328 KB)

    Stripe-geometry InGaAsP double heterojunction lasers with chemically-etched mirrors have been fabricated. External differential quantum efficiencies as high as ∼ 30% have been obtained for devices with two chemically-etched mirrors. Etched-mirror lasers with 25 µm wide stripes have threshold currents as low as 210mA (room-temperature, pulsed). The etched-mirror lasers are compared to cl... View full abstract»

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  • Corrections to "Limitations on single beam production lithography"

    Publication Year: 1980, Page(s): 244
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (34 KB)

    On page 196, column 1 line 9 of the above-named work (ibid., Vol. EDL-1, No. 6, pp 194-196, October, 1980) "overhauling" should be "overvaluing." View full abstract»

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  • Corrections to "A high resolution negative electron resist by image reversal"

    Publication Year: 1980, Page(s): 244
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (34 KB)

    A corrected figure 3 is presented for the above-named work (ibid., Vol. EDL-I, No. 10, October 1980). View full abstract»

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  • [Back cover]

    Publication Year: 1980, Page(s): c4
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    Freely Available from IEEE

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IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron devices.

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Tsu-Jae King Liu
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