IEEE Electron Device Letters

Issue 8 • Aug. 1980

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Displaying Results 1 - 9 of 9
  • [Front cover and table of contents]

    Publication Year: 1980, Page(s): c1
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    Freely Available from IEEE
  • Recent progress in indium tin oxide/polysilicon semiconductor-insulator-semiconductor (SIS) solar cells

    Publication Year: 1980, Page(s):143 - 146
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (328 KB)

    With process optimization, proper substrate surface preparation of the polysilicon, and hydrogen passivation, high efficiencies have been achieved for large area indium tin oxide/polysilicon semiconductor-insulator-semiconductor (SIS) solar cells fabricated by ion beam sputtering method. The results are competative to the best diffused p-n junction Wacker polysilicon solar cells. Comparative evalu... View full abstract»

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  • Ballistic and near ballistic transport in GaAs

    Publication Year: 1980, Page(s):147 - 148
    Cited by:  Papers (10)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (152 KB)

    Calculations which take into account collisions and intervally transfer in GaAs indicate that the electron transport in short GaAs structures is near-ballistic. High drift velocities (in excess of 5-107cm/s) may be achieved leading to potentially superior device performance. View full abstract»

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  • Two and three terminal gallium arsenide FET optical detectors

    Publication Year: 1980, Page(s):149 - 150
    Cited by:  Papers (19)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (384 KB)

    The changes in source-drain current and substrate voltage as a function of illumination intensity have been measured for two and three terminal GaAs FET structures. At low frequency, comparably high gains were observed in devices with and without gate metallization. The photo-response is probably due to a channel width modulation by a positive photovoltage developed between the high resistivity su... View full abstract»

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  • Resistance associated with FET gate metallization

    Publication Year: 1980, Page(s):151 - 153
    Cited by:  Papers (5)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (248 KB)

    The resistance of the metallization of a FET gate stripe has the effect of placing a non-linear resistance R(I) in series with the gate junction. A simple means of calculating R(I) is developed, and a curve of the drop across R(1) at milliampere forward biases is given. View full abstract»

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  • Double heterostructure Ga0.47In0.53As MESFETs by MBE

    Publication Year: 1980, Page(s):154 - 155
    Cited by:  Papers (26)  |  Patents (11)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (312 KB)

    Ga0.47In0.53As MESFETs have been fabricated on InP substrates. The low barrier height of Ga0.47In0.53As (0.20 eV) which makes simple GaInAs MESFETs at this composition impractical, has been overcome by using thin Al0.48In0.52As layers between gate metal and GaInAs active layers. Al0.48In0.52As has also been exp... View full abstract»

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  • Microwave switching with parallel-resonated GaAs FETS

    Publication Year: 1980, Page(s):156 - 158
    Cited by:  Papers (9)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (752 KB)

    The use of GaAs FETs as microwave switches is discussed, and the feasibility of such devices for applications requiring ultra low dc power consumption, low insertion loss, and bidirectionality is demonstrated. A discrete SPST switch consisting of two parallel-resonated single-gate GaAs FETs exhibited 0.5 db insertion loss with 25 db isolation at 8.5 GHz. The first monolithic SPDT switch incorporat... View full abstract»

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  • Hydrogenation of transistors fabricated in polycrystalline-silicon films

    Publication Year: 1980, Page(s):159 - 161
    Cited by:  Papers (145)  |  Patents (40)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (416 KB)

    Transistors have been fabricated with their active channels in thin films of polycrystalline silicon. A subsequent hydrogen plasma treatment has been used to improve the transistor properties significantly by reducing the number of electrically active grain-boundary defects. Plasma conditions to maximize the hydrogenation effect have been briefly investigated. View full abstract»

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  • [Back cover]

    Publication Year: 1980, Page(s): c4
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    Freely Available from IEEE

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IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron devices.

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Tsu-Jae King Liu
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