IEEE Electron Device Letters

Issue 4 • April 1980

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Displaying Results 1 - 7 of 7
  • [Front cover and table of contents]

    Publication Year: 1980, Page(s): c1
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    Freely Available from IEEE
  • Lateral DMOS Power transistor design

    Publication Year: 1980, Page(s):51 - 53
    Cited by:  Papers (18)  |  Patents (7)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (304 KB)

    Two dimensional analysis has been applied to model the lateral DMOST (LDMOST) transistor in the off condition. This approach predicts breakdown voltages beyond the conventional limit. Using this model, a 400 volt lateral transistor was designed, fabricated, and tested. The design values obtained from the numerical modeling, and the experimental results for a >425 volt LDMOST are presented. View full abstract»

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  • Polar mode scattering in ballistic transport GaAs devices

    Publication Year: 1980, Page(s): 54
    Cited by:  Papers (15)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (152 KB)

    Polar optic scattering in a ballistic transport n-GaAs device at 77 K is shown to be significant for voltages above the threshold for polar phonon emission, 0.035 V. Monte Carlo results for electron effective velocities at fields expected in such devices support this conclusion. View full abstract»

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  • Planar type vapor-phase epitaxial In0.53Ga0.47As photodiode

    Publication Year: 1980, Page(s):55 - 57
    Cited by:  Papers (5)  |  Patents (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (400 KB)

    A punch-through type planar photodiode with low dark current and high speed response was fabricated from low carrier density In0.53Ga0.47As grown by vapor-phase epitaxy. Dark current density was 3.1 × 10-5A/cm2at 10 V bias. Rise time and full width at half maximum were 82 and 126 psec, respectively, at a bias above 4 V. View full abstract»

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  • Ambipolar transport in double heterostructure injection lasers

    Publication Year: 1980, Page(s):58 - 60
    Cited by:  Papers (13)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (296 KB)

    Ambipolar conduction through the electrical confinement layers is shown to influence the properties of some double heterostructure injection lasers. A model of contact-limited ambipolar conduction is consistent with known material parameters of (Al,Ga)As lasers and explains several anomalies in the measured device electrical characteristics. The portion of current lost to lasing due to poor carrie... View full abstract»

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  • Photographic Ag photodoping of amorphous As2S3films

    Publication Year: 1980, Page(s):61 - 62
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (224 KB)

    It has been previously shown that negative relief images in As2S3layers can obtain from photodoping of As2S3with silver derived from evaporated silver halide films. In this letter we show that the effective speed of the process can be increased by several orders of magnitude by the addition of a photographic development step to generate a high resolution... View full abstract»

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  • [Back matter and back cover]

    Publication Year: 1980, Page(s): c4
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    Freely Available from IEEE

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IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron devices.

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Tsu-Jae King Liu
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