IEEE Electron Device Letters

Issue 2 • Feb. 1980

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  • [Front cover and table of contents]

    Publication Year: 1980, Page(s): c1
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  • A Ga1-xAlxAs monolithic opto-isolator

    Publication Year: 1980, Page(s):15 - 17
    Cited by:  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (504 KB)

    The performance of a Ga1-xAlxAs monolithic opto-isolator incorporating identical emitter and detector structures is described. The device is fabricated from graded bandgap Ga1-xAlxAs grown by liquid phase epitaxy on a semi-insulating GaAs substrate. Three identical rectangular diode elements are fashioned on the chip; the center element acts as an edge-e... View full abstract»

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  • Work function of WSi2

    Publication Year: 1980, Page(s):18 - 19
    Cited by:  Papers (8)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (182 KB)

    The work function of tungsten disilicide (WSi2) has been measured by MOS capacitance-voltage technique. MOS capacitors with WSi2as the gate material have been fabricated on n-type View full abstract»

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  • Light emission of GaAs power MESFETs under RF drive

    Publication Year: 1980, Page(s):20 - 21
    Cited by:  Papers (7)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (368 KB)

    Light emission from microwave power GaAs MESFETs was observed under rf operating conditions. It is shown that the light emission occurs at the drain side of the gate stripe and the light intensity can be correlated with the rf input drive and the output power saturation characteristic of the device. View full abstract»

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  • Corrections to "Analysis of the gyrotron amplifier for azimuthally varying TE modes"

    Publication Year: 1980, Page(s): 22
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (42 KB)

    Presents revisions to various figures, equations and formulas as well as text from pages 8 and 9. View full abstract»

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  • [Back cover]

    Publication Year: 1980, Page(s): c4
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    Freely Available from IEEE

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IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron devices.

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Tsu-Jae King Liu
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