IEEE Electron Device Letters

Issue 1 • Jan. 1980

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Displaying Results 1 - 8 of 8
  • [Front cover and table of contents]

    Publication Year: 1980, Page(s): c1
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    Freely Available from IEEE
  • Editorial

    Publication Year: 1980, Page(s): 1
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  • Generalized guide for MOSFET miniaturization

    Publication Year: 1980, Page(s):2 - 4
    Cited by:  Papers (253)  |  Patents (5)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (224 KB)

    As MOSFET dimensions are reduced, lower voltages, shallower junctions, thinner oxides, and heavier doping help to maintain long-channel behavior. A simple, empirical relation has been found between these parameters and the minimum channel length for which long-channel subthreshold behavior will be observed. This approximate relation provides an estimate for MOSFET parameters not requiring reductio... View full abstract»

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  • Charges at a laser-recrystallized-polycrystalline-silicon/insulator interface

    Publication Year: 1980, Page(s):5 - 7
    Cited by:  Papers (5)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (352 KB)

    Capacitance-voltage characteristics have been measured to determine the interface properties at the back surface of a layer of laser-recrystallized polycrystalline silicon. The interface between the recrystallized poly-silicon and an underlying oxide layer can be characterized by an effective fixed-charge density and a fast-state density, both in the low-to-middle-1011cm-2ran... View full abstract»

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  • Analysis of the gyrotron amplifier for azimuthally varying TE modes

    Publication Year: 1980, Page(s):8 - 9
    Cited by:  Papers (6)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (204 KB)

    An analysis of azimuthally varying TE modes shows that the linear gain of the gyrotron amplifier is maximum for the fundamental TE mode operating at the fundamental cyclotron harmonic. In general, highest power at reduced magnetic fields will be achieved when the azimuthal mode number is the same as the cyclotron harmonic number. View full abstract»

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  • High-speed NMOS circuits made with X-ray lithography and reactive sputter etching

    Publication Year: 1980, Page(s):10 - 11
    Cited by:  Papers (18)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (328 KB)

    The performance of fine line NMOS circuits fabricated with X-ray lithography and reactive sputter etching shows that NMOS can be competitive with other high-speed technologies. Enhancement and depletion mode silicon gate devices with 0.25 µm junction depth, 200 Å gate oxide and 0.7 µm channel length have been used in a 175 ps delay per stage ring oscillator with a 5V power-delay pro... View full abstract»

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  • Improved performance of implanted n+-p Hg1-xCdxTe photodiodes using insulated field plates

    Publication Year: 1980, Page(s):12 - 14
    Cited by:  Papers (4)  |  Patents (3)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (280 KB)

    Using insulated field plates, we have demonstrated that surface leakage had been limiting the RoA of our ion-implanted n+ -on-p (Hg, Cd) Te photodiodes. This leakage is believed to be tunneling current across a pinched-off depletion region at the surface. We have used gated diodes to eliminate leakage and improve RoA to the diffusion limit at 77°K for Hg0.8Cd<... View full abstract»

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  • [Back cover]

    Publication Year: 1980, Page(s): c4
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    Freely Available from IEEE

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IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron devices.

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Editor-in-Chief

Tsu-Jae King Liu
tking@eecs.berkeley.edu