IEEE Transactions on Electron Devices

Issue 2 • Feb. 1980

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Displaying Results 1 - 25 of 31
  • [Front cover and table of contents]

    Publication Year: 1980, Page(s): c1
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    Freely Available from IEEE
  • Introduction

    Publication Year: 1980, Page(s): 321
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  • Power DMOS for high-frequency and switching applications

    Publication Year: 1980, Page(s):322 - 330
    Cited by:  Papers (12)  |  Patents (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1088 KB)

    The virtues of DMOS over other MOS technologies are first presented. The design considerations for the device are then given. Device fabrication and characteristics are also shown. With the data from these devices, a small-signal low-frequency model is derived which incorporates velocity saturation. The high-voltage breakdown is considered and an analysis of both the theoretical and experimental v... View full abstract»

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  • Power MOSFET's for medium-wave and short-wave transmitters

    Publication Year: 1980, Page(s):330 - 334
    Cited by:  Papers (5)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (544 KB)

    This paper describes design and performance of a high-frequency power MOST used for switching-mode power amplifiers in the medium-wave (500 kHz to 1.5 MHz) or short-wave (1.5 MHz to 30 MHz) transmitters whose output power is in the vicinity of 1 kW. To obtain the drain-source voltages greater than 200 V with on-resistance remaining approximately 1 Ω, the offset gate length and field plate len... View full abstract»

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  • A complementary pair of planar-power MOSFET's

    Publication Year: 1980, Page(s):334 - 339
    Cited by:  Papers (12)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (648 KB)

    A complementary pair of planar-power MOSFETs has been developed, each of which has drain breakdown voltage as high as 250 V and 12-A current capability. These devices have field plates on the ion-implanted gate offset region to realize high-breakdown voltages and large current capabilities. The field distribution behavior of a field-plated high-voltage MOSFET and a non-field-plated device are comp... View full abstract»

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  • A high-performance planar power MOSFET

    Publication Year: 1980, Page(s):340 - 343
    Cited by:  Papers (25)  |  Patents (11)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (648 KB)

    Design and experimental realization of a 450-V, 0.75-Ω DMOS power transistor are discussed. Optimization criteria are evaluated for the control of parasitic elements of the planar diffused design. View full abstract»

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  • A 600-volt MOSFET designed for low on-resistance

    Publication Year: 1980, Page(s):343 - 349
    Cited by:  Papers (22)  |  Patents (22)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1032 KB)

    A 600-V vertical power MOSFET with low on-resistance is described. The low resistance is achieved by means of achieving near-ideal drain junction breakdown voltage and reduced drain spreading resistance from the use of an extended channel design. The various tradeoffs inherent in the design are discussed. Both calculated and experimental data are presented. The remote source configuration of the e... View full abstract»

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  • Epitaxial VVMOS power transistors

    Publication Year: 1980, Page(s):349 - 355
    Cited by:  Papers (2)  |  Patents (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (720 KB)

    The design aspects of a V-groove vertical-geometry power MOST (VVMOS) using a simple epitaxial-channel technology, are discussed in this paper. The process has several features including ease of fabrication, good threshold voltage controllability, and high breakdown voltage. Expressions for the on-resistance as a function of device parameters and for the device capacitances as a function of the ge... View full abstract»

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  • Modeling of the on-resistance of LDMOS, VDMOS, and VMOS power transistors

    Publication Year: 1980, Page(s):356 - 367
    Cited by:  Papers (137)  |  Patents (48)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1656 KB)

    Power MOS transistors have recently begun to rival bipolar devices in power-handling capability. This new capability has arisen primarily through the use of double-diffusion techniques to achieve short active channels and the incorporation of a lightly doped drift region between the channel and the drain contact, which largely supports the applied voltage. Many different structures have been propo... View full abstract»

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  • A power junction gate field-effect transistor structure with high blocking gain

    Publication Year: 1980, Page(s):368 - 373
    Cited by:  Papers (10)  |  Patents (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (928 KB)

    A new gate structure is described for vertical-channel power junction gate field-effect transistors (FET's). This gate structure has vertically walled gate regions extending perpendicular to the wafer surface. The structure is fabricated by using orientation-dependent silicon etching and selective vapor-phase epitaxial refill techniques. In comparison to previous gate structures made by planar dif... View full abstract»

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  • A new bipolar transistor—GAT

    Publication Year: 1980, Page(s):373 - 379
    Cited by:  Papers (18)  |  Patents (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (792 KB)

    A new bipolar transistor named Gate Associated Transistor (GAT) was proposed and the operating mechanisms were verified. The structure of the GAT has a unique base region consisting of an FET merged into the base of a standard bipolar transistor. The operating mechanisms and characteristics of the GAT were investigated and compared with those of standard power transistors. The most outstanding fea... View full abstract»

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  • Insulated-gate planar thyristors: I—Structure and basic operation

    Publication Year: 1980, Page(s):380 - 387
    Cited by:  Papers (33)  |  Patents (33)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1064 KB)

    A high-voltage planar triac which is controlled by an insulated-gate terminal is described. Its structure is related to the DMOS transistor on which it is based and its multiple operating modes are discussed in terms of an equivalent circuit composed of MOS and bi-polar transistors and resistors. A typical junction-isolated device has a 150-V breakdown and an on-resistance less than 10 Ω for ... View full abstract»

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  • Insulated-gate planar thyristors: II—Quantitative modeling

    Publication Year: 1980, Page(s):387 - 394
    Cited by:  Papers (2)  |  Patents (6)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (824 KB)

    The basic modes of operation of a new planar, high-voltage thyristor which is controlled by an insulated gate are described in Part I. This paper presents models for the dc operation of the device. Low-current nonregenerative operation is described by an equivalent circuit containing MOSFET's, bipolar transistors, and resistors. These are analyzed by a general-purpose nonlinear circuit analysis pr... View full abstract»

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  • Thermal stability and secondary breakdown in planar power MOSFET's

    Publication Year: 1980, Page(s):395 - 398
    Cited by:  Papers (25)  |  Patents (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (480 KB)

    The destructive secondary-breakdown mechanism of high-voltage n-channel power MOSFET's is discussed. A model is proposed in which the secondary breakdown is caused primarily by the negative-resistance effects of a parasitic bipolar transistor structure. The model suggests that destructive breakdown can be suppressed by a new no-surface-breakdown structure fabricated on a p-on p+ View full abstract»

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  • Computer analysis of breakdown mechanism in planar power MOSFET's

    Publication Year: 1980, Page(s):399 - 400
    Cited by:  Papers (2)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (232 KB)

    Breakdown mechanism in planar power MOSFET's having high breakdown voltage is investigated. Precise electric field distribution is obtained by two-dimensional numerical analysis. This field distribution is used to optimize device structure and to predict breakdown voltage. A technique for reducing the electric field on the silicon surface by equalizing its distribution is presented. View full abstract»

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  • The low light level potential of a CCD imaging array

    Publication Year: 1980, Page(s):401 - 405
    Cited by:  Papers (7)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (536 KB)

    Some limitations to the operation of a CCD TV camera sensor at low light levels are discussed. Transfer inefficiency with small charge packets is analyzed theoretically, and the prediction made that with good processing this should not be a serious problem. The principal limitation is seen to be the output amplifier, and a new low-noise output detector, the "floating surface detector," is describe... View full abstract»

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  • Modeling and experimental simulation of the low-frequency transfer inefficiency in bucket-brigade devices

    Publication Year: 1980, Page(s):405 - 414
    Cited by:  Papers (8)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1024 KB)

    The work presented in this paper extends the available theory and it also presents a model for the low-frequency charge transfer in MOS bucket-brigade devices (BBD's). Our new theory which characterizes the low-frequency component of transfer inefficiency in terms of the subthreshold current is frequency independent and it incorporates both channel-length and barrier-height modulations. This model... View full abstract»

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  • An analysis and the fabrication technology of the lambda bipolar transistor

    Publication Year: 1980, Page(s):414 - 419
    Cited by:  Papers (11)  |  Patents (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (800 KB)

    A new type of voltage-controlled negative-differential-resistance device using the merged integrated circuit of an n-p-n (p-n-p) bipolar transistor and an n(p)-channel enhancement MOSFET, which is called the Lambda bipolar transistor, is studied both experimentally and theoretically. The principal operation of the Lambda bipolar transistor is characterized by the simple circuit model and device ph... View full abstract»

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  • Ion-implanted low-barrier PtSi Schottky-barrier diodes

    Publication Year: 1980, Page(s):420 - 425
    Cited by:  Papers (14)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (648 KB)

    An ion-implanted, shallow n+layer has been used for lowering the barrier height of PtSi-n-Si Schottky diodes. Barrier height reductions up to 200 mV have been achieved with little degradation of the diode's reverse-current characteristics. During silicide formation, the implanted ions are "pushed" ahead of the PtSi-Si reaction zone and pile up at the silicide-silicon interface, resultin... View full abstract»

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  • Optically induced AM and FM in IMPATT diode oscillators

    Publication Year: 1980, Page(s):426 - 432
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (880 KB)

    Optical modulation of an IMPATT oscillator is investigated both theoretically and experimentally. Detailed computer simulations of the oscillatory dynamics are used to determine the basic mechanisms responsible for optical modulation and to examine the extent of and means for optimizing the optical response. It is shown that optically induced changes in the conduction current minimum and in the le... View full abstract»

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  • Transient temperature behavior in pulsed double-drift IMPATT diodes

    Publication Year: 1980, Page(s):433 - 442
    Cited by:  Papers (5)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1120 KB)

    The temperatures in a pulsed double-drift IMPATT diode are calculated as a function of position and time by a finite difference calculation using the alternating direction algorithm. The results are given as a function of pulse length and duty factor for a typical double-drift diode designed to operate near X band. Techniques are described for choosing spatial meshes and time integrals which vary ... View full abstract»

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  • An X-band SOS resistive gate—insulator—semiconductor (RIS) switch

    Publication Year: 1980, Page(s):442 - 448
    Cited by:  Papers (1)  |  Patents (20)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1064 KB)

    The new X-Band Resistive Gate-Insulator-Semiconductor (RIS) switch has been fabricated on silicon-on-sapphire, and its equivalent circuit model characterized. An RIS SPST switch with 20-dB ON/OFF isolation, 1.2-dB insertion loss, and power-handling capacity in excess of 20-W peak has been achieved at X band. The device switching time is on the order of 600 ns, and it requires negligible control ho... View full abstract»

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  • Application of anodization in Oxygen plasma to fabrication of GaAs IGFET's

    Publication Year: 1980, Page(s):449 - 455
    Cited by:  Papers (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (752 KB)

    Anodic oxide grown in oxygen plasma has been used to fabricate the gate insulator of GaAs insulated-gate field-effect transistors (IGFET's), by patterning the gate electrode of 1.2 µm in length with the dry etching process. It is found that the oxidation process does not damage the electrical property of the channel layer. However, the trap states at the interface between the oxide and the ch... View full abstract»

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  • I—V characteristics of GaAs MESFET with nonuniform doping profile

    Publication Year: 1980, Page(s):455 - 461
    Cited by:  Papers (13)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (568 KB)

    A simple analytical model of a GaAs MESFET with non-uniform doping is proposed. The analysis shows that at gate voltages well above the threshold (0.2-0.4 V) for a typical device the current saturation is related to the velocity saturation (with a possibility of a stationary domain formation at drain-to-source voltages high enough). Closer to the threshold the saturation is due to the channel pinc... View full abstract»

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  • Determination of capture cross section and surface-states concentration profile using the surface-acoustic-wave convolver

    Publication Year: 1980, Page(s):461 - 466
    Cited by:  Papers (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (696 KB)

    Energy distribution of surface states and majority-carriers capture cross section is determined using the surface-acoustic-wave (SAW) convolver. The semiconductor is placed a small distance above the SAW delay line, with a uniform air gap between the two media. A fast rise time dc pulse is applied across the semiconductor-delay line structure, and the resulting change in the SAW propagation loss i... View full abstract»

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Aims & Scope

IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects.

 

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Meet Our Editors

Editor-in-Chief

Giovanni Ghione
Politecnico di Torino,
10129 Torino, Italy

Phone +39 011 090 4064
email giovanni.ghione@polito.it