Electron Devices, IEEE Transactions on
Issue 1 • Date Jan. 1980
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Displaying Results 1 - 25 of 52
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[Front cover and table of contents]
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PDF (274 KB)
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High infrared responsivity Indium-doped silicon detector material compensated by neutron transmutation
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PDF (1272 KB)
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Optical absorption of gallium-doped silicon
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PDF (520 KB)
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1/f Noise in (Hg, Cd)Te photodiodes
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PDF (640 KB)
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Effect of trap tunneling on the performance of long-wavelength Hg
1-x Cdx Te photodiodes |
PDF (1128 KB)
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Temperature dependence of responsivity in closely compensated extrinsic infrared detectors
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PDF (672 KB)
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The effect of capacitive mixing and detection in Schottky-barrier diodes at high, intermediate, or modulation frequencies
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PDF (488 KB)
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Superconductive FIR detectors
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PDF (920 KB)
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Hybrid IRCCD imaging array
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PDF (704 KB)
Aims & Scope
IEEE Transactions on Electron Devices comprises original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.
Meet Our Editors
Editor-in-Chief
John D. Cressler
School of Electrical and Computer Engineering
Georgia Institute of Technology
