Issue 3 • Date March 1979
Filter Results
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[Front cover and table of contents]
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PDF (201 KB)
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A device model for an ion-implanted MESFET
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PDF (864 KB)
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Spatial composition and injection dependence of recombination in silicon power device structures
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PDF (1152 KB)
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Transport of majority and minority carriers in 2-µm-diameter Pt-GaAs schottky barriers
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PDF (528 KB)
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The effect of hole versus electron photocurrent on microwave—Optical interactions in IMPATT oscillators
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PDF (336 KB)
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Thermal resistance of MIS mesa varactors
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PDF (224 KB)
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Thick-film CO gas sensors
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PDF (416 KB)
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[Back cover]
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PDF (1510 KB)
Aims & Scope
IEEE Transactions on Electron Devices comprises original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.
Meet Our Editors
Editor-in-Chief
John D. Cressler
School of Electrical and Computer Engineering
Georgia Institute of Technology


