IEEE Transactions on Electron Devices

Issue 2 • Feb. 1979

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Displaying Results 1 - 11 of 11
  • [Front cover and table of contents]

    Publication Year: 1979, Page(s): c1
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    Freely Available from IEEE
  • Programmable CCD correlator

    Publication Year: 1979, Page(s):117 - 122
    Cited by:  Papers (10)  |  Patents (2)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (1008 KB)

    A programmable CCD tapped delay line, useful in radar and communications signal processors, is described. The 64-stage CCD, tapped at each stage, has been operated as a binary-weighted analog correlator, and as a bandpass filter. The CCD is a shallow, buried, n-channel device while the on-chip logic required for reference code input and storage is NMOS. Test results indicate near-theoretical peak-... View full abstract»

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  • Characteristics of the overlaid charge-coupled device

    Publication Year: 1979, Page(s):123 - 134
    Cited by:  Papers (10)  |  Patents (2)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (1648 KB)

    A novel charge-coupled device structure (the overlaid CCD) is described. It operates by transferring charge packets on two distinct levels which are overlaid in the semiconductor bulk. This bulk-integrated device has an increased density per unit area and a reduced driving power consumption per bit compared to conventional buried-channel CCD's still enjoying bulk-channel operation. Furthermore, th... View full abstract»

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  • A statistical model for determining the minimum size in integrated circuits

    Publication Year: 1979, Page(s):135 - 142
    Cited by:  Papers (11)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (1304 KB)

    A physical-statistical model for determining the minimum linewidth in integrated circuits of any kind is described. The minimum linewidth in integrated circuits is determined on the basis of a physical-statistical model for layout of the circuit pattern. First, the minimum spot size, 2.5 nm, of photon, electron, or ion beams, is determined, based on the Heisenberg uncertainty principle, minimum mo... View full abstract»

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  • Efficient modeling of thyristor static characteristics from device fabrication data

    Publication Year: 1979, Page(s):143 - 147
    Cited by:  Papers (3)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (561 KB)

    A method for determination of the dc characteristics of an n-p-n-p structure is described. Each of the three diffused regions is first of all characterized by computer analysis using the variable boundary regional approach at one low-bias value (mobility variation with doping level and high doping bandgap reduction effects are included in this program). A set of constants thus obtained is used to ... View full abstract»

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  • Modeling of low-pressure gas discharges

    Publication Year: 1979, Page(s):148 - 155
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (799 KB)

    In the first part of this paper, the ionization-balance and excitation-balance equations for low-pressure self-sustained rare-gas discharges are used to derive the scaling relationship thatE/Pis a constant for a constantI P^{3}R^{2}product. Comparison with experiment shows that this is a fair to good approximation for argon, neon, and helium discharges over a wide range of co... View full abstract»

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  • Comments on measuring the overall and the depressed collector efficiency in TWT's and Klystron amplifiers

    Publication Year: 1979, Page(s): 156
    Cited by:  Papers (6)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (136 KB)

    Evaluation procedures for multistage depressed collectors are discussed and sources of possible errors are pointed out. The errors may inflate the computed collector efficiences by as much as 10 percentage points. View full abstract»

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  • Influence of an external resistor on second breakdowns in epitaxial planar transistors

    Publication Year: 1979, Page(s):157 - 158
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (280 KB)

    The boundary condition between current mode and thermal mode second breakdowns is analyzed theoretically considering the influence of the external resistor. Also the triggering energy and distribution of temperature along collector n-layer for thermal mode second breakdown is discussed. View full abstract»

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  • Calculation of charge-handling capacity in twin-layer peristaltic charge-coupled devices

    Publication Year: 1979, Page(s):158 - 162
    Cited by:  Papers (4)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (432 KB)

    Charge-handling capacity is an important parameter in determining the dynamic range of a charge-coupled device (CCD). Based on depletion approximation, a one-dimensional charge storage capacity calculation is given for an n-channel twin-layer peristaltic CCD with constant layer dopings. The charge capacity is found to increase linearly with surface layer implant dose for lower level implant and sa... View full abstract»

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  • Correction to "Determination of nonuniform diffusion length and electric field in semiconductors"

    Publication Year: 1979, Page(s): 162
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  • [Back cover]

    Publication Year: 1979, Page(s): c4
    Cited by:  Papers (2)
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    Freely Available from IEEE

Aims & Scope

IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects.

 

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Giovanni Ghione
Politecnico di Torino,
10129 Torino, Italy

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