IEEE Transactions on Electron Devices

Issue 1 • Jan. 1979

Filter Results

Displaying Results 1 - 20 of 20
  • [Front cover and table of contents]

    Publication Year: 1979, Page(s): c1
    Request permission for commercial reuse | |PDF file iconPDF (144 KB)
    Freely Available from IEEE
  • Introduction

    Publication Year: 1979, Page(s): 1
    Request permission for commercial reuse | |PDF file iconPDF (120 KB)
    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Alpha-particle-induced soft errors in dynamic memories

    Publication Year: 1979, Page(s):2 - 9
    Cited by:  Papers (486)  |  Patents (6)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (848 KB)

    A new physical soft error mechanism in dynamic RAM's and CCD's is the upset of stored data by the passage of alpha particles through the memory array area. The alpha particles are emitted by the radioactive decay of uranium and thorium which are present in parts-per-million levels in packaging materials. When an alpha particle penetrates the die surface, it can create enough electron-hole pairs ne... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Alpha-particle tracks in silicon and their effect on dynamic MOS RAM reliability

    Publication Year: 1979, Page(s):10 - 16
    Cited by:  Papers (116)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (648 KB)

    Recent investigations [1] have found low levels of alpha particles (< 0.1 counts/cm2. h) emitted from the immediate chip environment to be responsible for soft errors in 16K MOS dynamic RAM's. We have investigated this problem in two related studies. First, we review the interaction of alpha particles with the Si lattice and present range-energy and specific ionization data. Experime... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • A new electrostatic discharge failure mode

    Publication Year: 1979, Page(s):16 - 21
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (632 KB)

    A new electrostatic discharge failure mode was discovered which affects MOS LSI components in hermetic packages with nonconductive lids. Failure can be induced by spraying package lids with canned coolant. It is shown that charge from the freeze spray causes breakdown in the air-gap between the die surface and the lid. As a result, localized surface charging and field inversion occurs in the array... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Failure of small thin-film conductors due to high current-density pulses

    Publication Year: 1979, Page(s):22 - 26
    Cited by:  Papers (4)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (600 KB)

    Current pulses at high repetition rates and extremely high current density (> 107A/cm2) were applied to small geometry, thin-film aluminum-copper alloy conductors. The conductor lifetimes were measured as a function of current density and duty cycle. While the observed open-circuit failures are evidently related in some way to the temperature excursions produced by Joule h... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • The reduction of Au—Al intermetallic formation and electromigration in hydrogen environments

    Publication Year: 1979, Page(s):27 - 34
    Cited by:  Papers (1)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (1688 KB)

    A series of experiments to determine the effect of the environment on gold-aluminum intermetallic compound formation have been carried out. The results of these experiments led to an investigation of the effect of the environment on electromigration in aluminum. Bond pull tests as well as SEM examination were done on commercial IC packages. After removing the lid, the packages were heated (350 or ... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Double-level metallurgy defect study

    Publication Year: 1979, Page(s):34 - 37
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (312 KB)

    A double-level metallurgy (DLM) test chip having purposely induced nonrandom quartz insulation defects (cracks and holes) is used to study the behavior of the defects under accelerated temperature-voltage stress conditions. Data obtained from this stress are analyzed and used to calculate activation energies for an Arrhenius-voltage dependent model. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • New concerns about integrated circuit reliability

    Publication Year: 1979, Page(s):38 - 43
    Cited by:  Papers (12)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (672 KB)

    Accelerated-stress life testing is widely used for the purpose of controlling process aberrants which could supply whole lots of high-failure-rate parts. Accelerated-stress conditions are also used for screening purposes to reduce or eliminate early failures. But, a new reliability consideration results from the fact that many electronic systems which use large numbers of integrated circuits are n... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • VMOS reliability

    Publication Year: 1979, Page(s):43 - 48
    Cited by:  Papers (5)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (664 KB)

    Whenever a new technology such as VMOS emerges, one key element to its success is the reliability of the products manufactured in that technology. The results of a reliability study to examine the fundamental VMOS device stability, high-temperature operating life (HTOL) failure rates, and electrostatic protection are presented for the VMOS technology. Experimental data for more than five (5) milli... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • H-MOS reliability

    Publication Year: 1979, Page(s):48 - 51
    Cited by:  Papers (8)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (400 KB)

    H-MOS is a new high-performance n-channel technology with a 1-pJ speed power product. This technology is the result of scaling MOS device dimensions. The effect of thinner oxide integrity and hot electron injection are investigated. A screening technique for thin oxides using high-voltage stressing is presented. Threshold shifts due to hot electron injection were observed to be less than 1 mV. Ope... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Reliability program and results for a 4K dynamic RAM

    Publication Year: 1979, Page(s):52 - 56
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (512 KB)

    A comprehensive reliability program for an n-channel silicon gate 4K dynamic RAM is described. The program included dynamic high-temperature accelerated aging for various time periods followed by thorough electrical testing. Results including failure mechanism descriptions, acceleration factors, and projected failure rates during system use are included. The actual failure rate during system use i... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • New acceleration factors for temperature, humidity, bias testing

    Publication Year: 1979, Page(s):56 - 71
    Cited by:  Papers (21)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (1534 KB)

    New temperature-humidity acceleration factors for surface conductance (G) were determined. These can be used to relate device life in a high-stress laboratory environment to device life in a normal-use environment. Analytical expressions for the acceleration factors were derived for both encapsulated and unencapsulated test specimens. Lower acceleration factors were predicted for specim... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Electrical bias level influence on THB results of plastic encapsulated NMOS 4K RAM's

    Publication Year: 1979, Page(s):72 - 77
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (608 KB)

    Samples of plastic encapsulated NMOS/LSI dynamic 4K RAM's were placed on 85°C/85-percent relative humidity (RH) tests at four different bias levels. No level exceeded specification maxima. Tests were continued as long as practical to allow observation of the entire failure distribution of most of the test groups. Over 394 000 actual device-hours were accumulated. Detailed failure analysis was... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Reliability of hybrid encapsulation based on fluorinated polymeric materials

    Publication Year: 1979, Page(s):77 - 83
    Cited by:  Patents (2)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (712 KB)

    A new class of polymeric materials [1] synthesized from fluorinated precursors to produce network molecules of epoxies and polyurethanes has been analyzed as a hybrid encapsulation material. Using test structures, a microthin film (Au-Al2O3) moisture sensor and Auger/SIMS analysis, the moisture penetration kinetics for the fluorinated network polymeric materials (FNP) has bee... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Water vapor penetration rate into enclosures with known air leak rates

    Publication Year: 1979, Page(s):83 - 90
    Cited by:  Papers (2)  |  Patents (2)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (800 KB)

    The rate at which water vapor penetrates a faulty seal in a "hermetically sealed" device has been examined both experimentally and theoretically in this study. The experimental data were generated by studying the rate of moisture ingress into two types of packages; a TO-5 can and a ¼ × ¼ in ceramic flatpack. The TO-5 packages were fitted with capillary tubes of varying diameters wit... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Microcircuit analysis techniques using field-effect liquid crystals

    Publication Year: 1979, Page(s):90 - 95
    Cited by:  Papers (1)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (664 KB)

    New analysis methods are described which use the non-destructive field-effect liquid-crystal display (LCD) technique to produce a static optical display of circuit node logic levels associated with selectable digital states of an operating integrated circuit (IC). One method employs special control of the device under test (DUT) and another uses a synchronous, externally applied electric field to ... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Low-high-low profile gallium arsenide IMPATT reliability

    Publication Year: 1979, Page(s):96 - 101
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (888 KB)

    The reliability of low-high-low gallium arsenide IMPATT diodes has been studied. The devices were fabricated from vapor phase grown epitaxial gallium arsenide using sputtered platinum Schottky junctions and plated heat sink construction. Various screening methods have been evaluated for use in burn-in, and 75°C case dc burn-in at rated power dissipation selected as the best compromise. Long-t... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Ceramic capacitor insulation resistance failures accelerated by low voltage

    Publication Year: 1979, Page(s):102 - 108
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (1352 KB)

    Ceramic capacitors failed insulation resistance at less than 1/10 th their rated voltage despite the fact that they had been subjected to "voltage conditioning" at twice the rated voltage for 100 h. Many failures recovered as the voltage was increased. Using special sectioning procedures, the failures were isolated to single ceramic plates; however, extensive analysis did not initially determine t... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • [Back cover]

    Publication Year: 1979, Page(s): c4
    Request permission for commercial reuse | |PDF file iconPDF (1149 KB)
    Freely Available from IEEE

Aims & Scope

IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects.

 

Full Aims & Scope

Meet Our Editors

Editor-in-Chief

Giovanni Ghione
Politecnico di Torino,
10129 Torino, Italy

Phone +39 011 090 4064
email giovanni.ghione@polito.it