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IEEE Transactions on Electron Devices

Issue 12 • Date Dec. 1978

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Displaying Results 1 - 13 of 13
  • [Front cover and table of contents]

    Publication Year: 1978, Page(s): c1
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    Freely Available from IEEE
  • A method for the characterization of p+-n-n+diodes using DC measurements

    Publication Year: 1978, Page(s):1365 - 1368
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (440 KB)

    An experimental technique using only dc terminal measurements with a special set of masks is presented for characterizing device properties of single diffused p+-n-n+diodes. The vertical and lateral current components are separately obtained. The carrier lifetimes in the epitaxial layer and the p+diffusion, and the recombination velocity at the oxide-silicon p... View full abstract»

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  • Distribution of flat-band voltages in laterally nonuniform MIS capacitors and application to a test for nonuniformities

    Publication Year: 1978, Page(s):1368 - 1373
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (648 KB)

    Interface states and lateral nonuniformities produce very similar abnormalities in the C-V curves of MIS capacitors. The effect of a laterally nonuniform distribution of fixed charge in the insulator can be characterized by a flat-band-voltage distribution function. Here we present a simple, approximate method for determining this distribution from the quasi-... View full abstract»

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  • Enhanced capacity CCD

    Publication Year: 1978, Page(s):1374 - 1382
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (952 KB)

    This paper introduces a method for enhancing the charge capacity and lowering the leakage current in CCD's. The two-phase coplanar electrode structure is chosen as a vehicle for demonstrating the concept. The charge capacity enhancement is achieved by a combination of p-type and n-type implantations. This method of charge capacity enhancement relies on the increase of depletion capacitance in the ... View full abstract»

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  • The heat-flow problem in silicon: An approach to an analytical solution with application to the calculation of thermal instability in bipolar devices

    Publication Year: 1978, Page(s):1382 - 1388
    Cited by:  Papers (7)  |  Patents (7)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (712 KB)

    The experimental data for the temperature dependence of the thermal conductivity of silicon are reviewed. It is proposed that an empirical formula of the form K = K_{0}/(T-T_{0}) provides a good description of the measurements. The steady-state heat-flow equations are formulated so that the nonlinear heat-flow problem may be solved in terms of an equivalent ... View full abstract»

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  • Increase of gate capacitance in DMOST

    Publication Year: 1978, Page(s):1388 - 1394
    Cited by:  Papers (8)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (712 KB)

    The gate capacitance of an n-channel DMOST at nonzero drain current biasing exceeds that of a similar conventional MOST and may even exceed the gate oxide capacitance. This effect is due to the behavior of mobile electrons in the device. The fundamental operation of the DMOST is understood through the use of a two-dimensional computer analysis. Based on this insight, the increase of the gate capac... View full abstract»

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  • Optical MTF evaluation for the photolitographic technology

    Publication Year: 1978, Page(s):1394 - 1399
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (592 KB)

    Measurements of the modulation transfer function (MTF) for different photolithographic exposure tools, such as contact, proximity, and projection printers have been made by the Fourier analysis of an exposed and developed positive photoresist profile. Through the obtained MTF data, the optical performance of the tools is presented concerning linewidth accuracy, reduction in developed photoresist t... View full abstract»

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  • Hot electrons in short-gate charge-coupled devices

    Publication Year: 1978, Page(s):1399 - 1405
    Cited by:  Papers (10)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (744 KB)

    Calculations are presented which show that the heating of electrons by high electric fields in short-gate surface-channel charge-coupled devices slows down the charge transfer process because of mobility reduction and hot carrier diffusion. Other consequences of carrier heating are a reduction of the interface-trapping noise and transfer inefficiency at short transfer cycles. View full abstract»

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  • Improved performance thin solar cells

    Publication Year: 1978, Page(s):1405 - 1409
    Cited by:  Papers (4)  |  Patents (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (728 KB)

    A silicon solar cell device structure was developed to improve performance from thin cells. The design has collecting junctions both on the illuminated and most of the dark sides. Since the two junctions function interdependently, the device is called a tandem junction cell (TJC). The photoresponse I-V performance of cells was measured in two modes, with eith... View full abstract»

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  • A high-speed MoSi2-gate 8-kbit read-only memory made with silicon-gate compatible processing

    Publication Year: 1978, Page(s):1409 - 1411
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (496 KB)

    A high-speed n-channel MoSi2-gate 8-kbit E/D ROM was fabricated with a process similar to the Si gate process. The MoSi2gate ROM achieved higher operating speed than the poly Si gate ROM due to the lower distributed resistance of the interconnection lines. The result was in good agreement with the computor simulation result. View full abstract»

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  • An improved GAMBIT device structure

    Publication Year: 1978, Page(s):1411 - 1412
    Cited by:  Papers (1)  |  Patents (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (264 KB)

    An improved device structure is presented for the gate modulated bipolar transistor (GAMBIT). By forming vertical walled collector regions, the GAMBIT voltage-controlled negative-resistance characteristic has been made to occur at low collector voltages without the presence of the threshold voltage observed for the planar diffused devices. The negative resistance of these devices varies exponentia... View full abstract»

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  • Effect of heavy doping on the properties of high-low junction

    Publication Year: 1978, Page(s):1412 - 1414
    Cited by:  Papers (2)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (352 KB)

    The minority carrier reflecting properties of the high-low junction have been studied, taking into account the heavy doping effects. It has been observed that the junction leakage velocity attains a minimum value for a particular value of impurity concentration in the heavily doped region, when an empirical relationship giving bandgap narrowing as a function of impurity concentration in silicon is... View full abstract»

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  • [Back cover]

    Publication Year: 1978, Page(s): c4
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    Freely Available from IEEE

Aims & Scope

IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects.

 

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Editor-in-Chief

Giovanni Ghione
Politecnico di Torino,
10129 Torino, Italy

Phone +39 011 090 4064
email giovanni.ghione@polito.it