By Topic

IEEE Transactions on Electron Devices

Issue 11 • Nov. 1977

Filter Results

Displaying Results 1 - 8 of 8
  • [Front cover and table of contents]

    Publication Year: 1977, Page(s): c1
    Request permission for commercial reuse | PDF file iconPDF (147 KB)
    Freely Available from IEEE
  • Radiation-induced leakage currents in n-channel Silicon-on-sapphire MOST's

    Publication Year: 1977, Page(s):1277 - 1284
    Cited by:  Papers (11)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (920 KB)

    This paper describes an experimental study of the source-to-drain leakage currents in silicon-on-sapphire n-channel MOS transistors before and after exposure to ionizing radiation. The leakage currents are studied as a function of device geometry and various processing parameters. The effects on the leakage currents of wet and dry gate oxidations, the transistor channel length, and optical (UV) bl... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Design of single mesh flashlamp driving circuits with resistive losses

    Publication Year: 1977, Page(s):1285 - 1287
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (336 KB)

    The normalized nonlinear equation (dI/d\tau ) \pm [\alpha + \beta |I|^{1/2}] + \int\min{0}\max {\tau }I d\bar{\tau }= 1 describing current evolution in a single mesh flashlamp driving circuit has been solved using numerical methods for the case of a critically damped pulse ( \alpha \simeq 0.84) and \beta = r/Z_{0} \neq 0...
						<a href= View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Bias dependence of GaAs and InP MESFET parameters

    Publication Year: 1977, Page(s):1288 - 1296
    Cited by:  Papers (47)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (944 KB)

    A comparative analysis of the bias dependence of critical RF parameters in GaAs and InP metal-semiconductor field-effect transistors (MESFET's) led to the following conclusions. 1) The drain-gate feedback capacitance in GaAs MESFET's is lower than in InP MESFET's, because of a stronger tendency in GaAs to form stationary Gunn domains at the typical drain bias levels employed. 2) The drain-source o... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Time-dependent carrier flow in a transistor structure under nonisothermal conditions

    Publication Year: 1977, Page(s):1297 - 1304
    Cited by:  Papers (16)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (920 KB)

    A time-dependent temperature-dependent two-dimensional model has been developed to illustrate the internal behavior of bipolar transistors. Electrothermal interactions within the device are calculated in an attempt to better understand thermal instability modes. Numerically computed results are presented showing the electrical and thermal effects in the transistor operating in the switching mode d... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • The planar junction etch for high voltage and low surface fields in planar devices

    Publication Year: 1977, Page(s):1304 - 1310
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (808 KB)

    A modification of the moat etch type of surface contouring is described which can increase the avalanche breakdown voltage of planar p-n junctions and greatly reduce peak surface electric fields. A properly located moat etch or bevel is used to achieve what is effectively a positive bevel intersection angle between the junction and the surface. Qualitative arguments based on charge balance, exact ... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Comments on "Bandgap narrowing in silicon bipolar transistors"

    Publication Year: 1977, Page(s):1310 - 1311
    Cited by:  Papers (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (225 KB)

    This note is a response to the paper by Slotboom and de Graaff. The author discusses the detection of bandgap narrowing in silicon bipolar transistors. In particular, he reviews and reanalyzes previously published data [1] in the light of Slotboom and de Graaff's recent results [2], [3]. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • [Back cover]

    Publication Year: 1977, Page(s): c4
    Request permission for commercial reuse | PDF file iconPDF (592 KB)
    Freely Available from IEEE

Aims & Scope

IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects.

 

Full Aims & Scope

Meet Our Editors

Editor-in-Chief

Giovanni Ghione
Politecnico di Torino,
10129 Torino, Italy

Phone +39 011 090 4064
email giovanni.ghione@polito.it