IEEE Transactions on Electron Devices

Issue 10 • Oct. 1977

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Displaying Results 1 - 15 of 15
  • [Front cover and table of contents]

    Publication Year: 1977, Page(s): c1
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    Freely Available from IEEE
  • Thermal imaging with pyroelectric vidicons

    Publication Year: 1977, Page(s):1221 - 1228
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (872 KB)

    The performance of a pyroelectric vidicon operating in either a panning or chopping mode is discussed. Some constraints on vidicon applications imposed by the nature of pyroelectricity are explored. Several means for advancement of pyroelectric vidicon technology are described. Finally, the projected performance of pyroelectric vidicons that incorporate these advances is discussed along with the p... View full abstract»

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  • Characteristics of I2L at low current levels

    Publication Year: 1977, Page(s):1228 - 1233
    Cited by:  Papers (5)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (614 KB)

    The validity of the injection model is assessed in the low power range. Experimental evidence is given that the three base current components (I_{nc}, I_{no}, and Ip) can be determined from a three-gate experiment. The results are explained from the underlying device physics. Experimental data are presented for the temperature dependence of the upward current gain. View full abstract»

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  • Charge handling capacity in charge coupled devices

    Publication Year: 1977, Page(s):1234 - 1238
    Cited by:  Papers (5)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (384 KB)

    In analog signal processing applications, the charge handling capacity of a charge coupled device (CCD) is an important parameter that determines the dynamic range. In this paper, approximate expressions for the signal handling capacity for surface-channel and buried-channel CCD's are derived and compared. The upper limit for the buried-channel charge capacity is imposed by the onset of surface el... View full abstract»

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  • Scaling of positive-column Hg—Ar discharges towards display cells

    Publication Year: 1977, Page(s):1239 - 1244
    Cited by:  Papers (3)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (698 KB)

    Measurements are presented of the ultraviolet output and the electric field of Hg-Ar positive-column discharges with diameters2Rranging from 0.5 to 5 mm. The UV exitance and efficiency remain constant (and equal to that of the standard fluorescent tube), provided the pressures are scaled in proportion to1/R. From the existing models of the Hg-Ar column a parametric descriptio... View full abstract»

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  • Temperature dependence of MOSFET characteristics in weak inversion

    Publication Year: 1977, Page(s):1245 - 1248
    Cited by:  Papers (11)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (383 KB)

    A knowledge of the MOSFET operating in weak inversion is important for circuits with low leakage specifications. This paper discusses the effect of temperature on the MOSFET in weak inversion. The reciprocal slopenof the log IDSversus VGSrelationship between source-drain current IDSand gate bias VGSmay be given byfrac{1}{(n - 1 - gamma)^{... View full abstract»

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  • Frequency and temperature tests for lateral nonuniformities in MIS capacitors

    Publication Year: 1977, Page(s):1249 - 1255
    Cited by:  Papers (14)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (896 KB)

    Interface states and lateral nonuniformities produce very similar abnormalities in theC-Vcurves of MIS capacitors. TwoC-Vtechniques are presented here to aid in distinguishing between them. The first technique is based on the frequency dependence of the interface-state capacitance and utilizes the resulting frequency dispersion of the "high-frequency" capacitance in the deple... View full abstract»

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  • Factors limiting current gain in power transistors

    Publication Year: 1977, Page(s):1255 - 1259
    Cited by:  Papers (8)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (552 KB)

    The combined effect of sidewall injection, bandgap narrowing, and Shockley-Hall-Read and Auger recombination in determining emitter efficiency in n-p-n power transistor structures is demonstrated by utilizing a two-dimensional transistor model. The relative importance of each of these effects is calculated as a function of emitter junction depth, emitter surface doping, and injection level. It is ... View full abstract»

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  • A modification of the Gummel—Poon charge-control equations

    Publication Year: 1977, Page(s):1259 - 1261
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (336 KB)

    The incorporation of the effect of basewidth modulation on the base transit time in the dc Gummel-Poon charge-control equations results in the modeling of basewidth modulation and high-level injection effects by separate factors. View full abstract»

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  • Design considerations for exponentially retrograded silicon hyperabrupt varactors

    Publication Year: 1977, Page(s):1261 - 1263
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (322 KB)

    Avalanche breakdown voltage VB, space-charge width at breakdown WB, andC-Vindexnof exponentially retrograded silicon hyperabrupt p+-n junctions have been calculated for various impurity distributions. Empirical relations are obtained expressing WB, VB, and the maximum value ofnin terms of impurity profile param... View full abstract»

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  • Injection control in TED's by metal-n+(thin)-n cathode structure

    Publication Year: 1977, Page(s):1264 - 1266
    Cited by:  Papers (6)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (392 KB)

    Current transport through a reverse-biased metal-n+(thin)-n structure has been studied from the point of view of injection-controlled operation of transferred electron devices. Parameters of the thin heavily doped layer required to give a desired amount of barrier lowering in n GaAs have been calculated. View full abstract»

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  • Simple model for threshold voltage in a short-channel IGFET

    Publication Year: 1977, Page(s):1266 - 1268
    Cited by:  Papers (47)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (320 KB)

    The threshold voltage of a short-channel IGFET can be expressed, in relation to that for a long-channel device, asV_{T} = V_{TLC} - alpha - betaV_{DS}. This behavior is deduced from a charge injection model and is verified both by two-dimensional numerical simulations and by actual threshold data. View full abstract»

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  • Inverse current gain improvement of bipolar transistors by double-base diffusion

    Publication Year: 1977, Page(s):1269 - 1270
    Cited by:  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (360 KB)

    The double-base diffusion process is introduced and is experimentally shown to significantly improve the inverse or upward current gain of the n-p-n bipolar transistor. The technique consists of a deep p+diffusion into an external base region of multicollector transistors forming a close-in collar around the intrinsic base of each transistor. This technique, together with the use of dee... View full abstract»

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  • Variability study and design considerations of p-n junction hyperabrupt varactor diodes

    Publication Year: 1977, Page(s):1270 - 1272
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (392 KB)

    Variability analysis of the hyperabrupt epitaxial p-n junction varactor diode has been carried out. Results are given for the dependence of the electrical parameters on the various physical parameters of the device. A comparison has been made between a Schottky hyperabrupt varactor and a p-n junction hyperabrupt varactor, and the undesirable effects of the impurity compensation in the latter case ... View full abstract»

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  • [Back cover]

    Publication Year: 1977, Page(s): c4
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    Freely Available from IEEE

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IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects.

 

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Giovanni Ghione
Politecnico di Torino,
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