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IEEE Transactions on Electron Devices

Issue 6 • June 1976

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Displaying Results 1 - 15 of 15
  • [Front cover and table of contents]

    Publication Year: 1976, Page(s): c1
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    Freely Available from IEEE
  • Transmission electron microscopy of cross sections of large scale integrated circuits

    Publication Year: 1976, Page(s):531 - 533
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (872 KB)

    Accurate cross-sectional views of large scale integrated circuits are useful for failure analysis and process evaluation. We have successfully prepared thin sections of finished devices cut perpendicular to the plane of the chip and examined them using transmission electron microscopy. We describe the sectioning procedure and show some cross-sectional views from memory cells of a CMOS RAM with pol... View full abstract»

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  • An experimental crystalline-selenium vidicon

    Publication Year: 1976, Page(s):534 - 537
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (384 KB)

    The use of polycrystalline Se as the photosensitive target of a vidicon image tube has been demonstrated for the first time. The mode of operation of this target layer is fundamentally different from that of the amorphous-Se vidicon target, which is commonly described as a photosensitive insulator layer. In contrast, the explanation for the crystalline-Se vidicon operation, as proposed here, is ba... View full abstract»

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  • Aluminum—Silicon Schottky barriers and ohmic contacts in integrated circuits

    Publication Year: 1976, Page(s):538 - 544
    Cited by:  Papers (9)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (768 KB)

    Experimental observations (electrical characteristics and in depth Auger analysis) have been made of the interface behavior in aluminum-silicon contacts. The barrier heights of these contacts (φbnfor n-type, φbpfor p-type silicon) are sensitive to heat treatments (HT) that are a part of normal integrated circuit processing. If oxide layers (≃20 Å) are pre... View full abstract»

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  • Drain conductance of junction gate FET's in the hot electron range

    Publication Year: 1976, Page(s):545 - 553
    Cited by:  Papers (36)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (888 KB)

    A new model is proposed for the drain conductance of J-FET's in the hot electron range. The model is based on a physical picture revealed through two-dimensional numerical analysis. The two-dimensional analysis shows that the electron concentration changes gradually at the boundary of a depleted region which is defined by a conventional theory. Because of this gradual change, electrons can remain ... View full abstract»

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  • Properties of the MZOS surface wave convolver configuration

    Publication Year: 1976, Page(s):554 - 559
    Cited by:  Papers (6)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (904 KB)

    The MZOS (metal-zinc oxide-silicon dioxide-silicon) structure is investigated in order to provide a phenomenological understanding of the charge transfer and trapping properties of the zinc oxide layer. Results of fast-ramp measurements of capacitance versus voltage are presented, and on the basis of these results, some biasing and operating procedures are suggested to make effective use of the me... View full abstract»

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  • An investigation of multiple domain Gunn effect oscillators

    Publication Year: 1976, Page(s):560 - 567
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (880 KB)

    The quenched multiple domain mode of oscillation is proposed in GaAs Gunn diodes. Operating conditions for this mode are explored by means of a computer simulation and a simplified linearized-lumped analysis that was developed to generate waveforms for quenched domain devices. Optimum efficiency is seen when a maximum number of "hybrid sized" domains are packed into a device which is operated at t... View full abstract»

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  • Design fabrication of low noise Gunn diode with consideration of a thermocompression bonding effect

    Publication Year: 1976, Page(s):567 - 572
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (608 KB)

    In order to reduce 1/f noise generated by Gunn diodes, an experimental study was made on the effects of thermocompression bonding on Gunn oscillator noise. It is found that carrier traps at dislocations introduced into the Gunn diode by the thermocompression process increase the Gunn oscillator noise significantly. An optimum thermocompression bonding condition for minimizing Gunn diode 1/f noise ... View full abstract»

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  • Efficiency of the surface-acoustic-wave diode convolver

    Publication Year: 1976, Page(s):573 - 579
    Cited by:  Papers (2)  |  Patents (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (784 KB)

    The diode convolver performs signal processing, for example correlation, by mixing two input waveforms in an array of diodes, each diode being connected to a tap on a surface acoustic wave delay line. This paper gives the theory for the device efficiency, for a parallel circuit arrangement of taps and diodes. The effect of stray capacity is also analyzed. An experimental 31-tap device used hybrid ... View full abstract»

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  • Schottky diodes and other devices on thin silicon membranes

    Publication Year: 1976, Page(s):579 - 583
    Cited by:  Papers (13)  |  Patents (6)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (616 KB)

    The fabrication of ultra-thin silicon membranes of micron or submicron sizes with thicker supporting frames makes possible improvements in several kinds of electronic devices. We show that the series resistances of some devices can be reduced significantly, thus effecting increases in the cutoff frequencies. The resistance swing of Schottky diodes can also be raised. Initial experimentation relati... View full abstract»

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  • Saturation velocity of electrons in GaAs

    Publication Year: 1976, Page(s):584 - 586
    Cited by:  Papers (11)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (369 KB)

    The saturation velocity of electrons in n-GaAs has been deduced from the v/E characteristic over a temperature range 130-400 K. The experimental values are compared with those predicted by a model assuming the velocity to be limited by intervalley scattering in the (100) valleys. The agreement between theory and experiment is very good if a value of 0.42n10 is used for the effective mass in the (1... View full abstract»

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  • Glass envelope UV-sensitive flame detectors

    Publication Year: 1976, Page(s):586 - 587
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (280 KB)

    The need for fast-response low-voltage flame sensors, able to operate for long periods in ambients presenting a wide range of temperatures, prompted the construction and testing of gas amplification UV-photosensitive detectors utilizing 9741 glass envelopes and a variety of gas fills and electrode and getter materials. Addition of 1 mole percent H2to a He gas fill reduced the required m... View full abstract»

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  • Barrier height enhancement in p-silicon MIS solar cells

    Publication Year: 1976, Page(s):587 - 589
    Cited by:  Papers (6)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (384 KB)

    Calculations are presented which indicate that the barrier height of metal-thin insulator-p-silicon diodes can be greatly enhanced by the presence of positive charge in the interfacial layer. Application of the model to recent MIS silicon solar cell data suggests that oxide charge densities of 3-4 × 1012charges.cm-2could be responsible for the high performance of the rep... View full abstract»

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  • Evaluation of the profile constants of p+-n-n+hyperabrupt junctions

    Publication Year: 1976, Page(s):589 - 591
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (432 KB)

    A method for evaluating the profile constants of a p+-n-n+hyperabrupt junction is given. The method is useful in the design and characterization of hyperabrupt tuning varactors. View full abstract»

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  • [Back cover]

    Publication Year: 1976, Page(s): c4
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    Freely Available from IEEE

Aims & Scope

IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects.

 

Full Aims & Scope

Meet Our Editors

Editor-in-Chief

Giovanni Ghione
Politecnico di Torino,
10129 Torino, Italy

Phone +39 011 090 4064
email giovanni.ghione@polito.it