Scheduled System Maintenance
On Friday, October 20, IEEE Xplore will be unavailable from 9:00 PM-midnight ET. We apologize for the inconvenience.
Notice: There is currently an issue with the citation download feature. Learn more.

IEEE Transactions on Electron Devices

Issue 5 • May 1976

Filter Results

Displaying Results 1 - 13 of 13
  • [Front cover and table of contents]

    Publication Year: 1976, Page(s): c1
    Request permission for commercial reuse | PDF file iconPDF (158 KB)
    Freely Available from IEEE
  • Determination of the interaction impedance of coupled cavity slow wave structures

    Publication Year: 1976, Page(s):491 - 493
    Cited by:  Papers (12)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (264 KB)

    The interaction impedance of coupled cavity slow wave structures can be measured by perturbing the resonances of a shorted length of the structure using a dielectric rod. An analysis of this procedure is presented. The analysis retains radial as well as axial electric fields and all significant space harmonics. The results obtained are easily programmed formulas for calculating total interaction i... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Temperature transients in IMPATT diodes

    Publication Year: 1976, Page(s):494 - 503
    Cited by:  Papers (5)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (992 KB)

    A model for computing the thermal transient response of a diamond-heat-sinked IMPATT diode has been formulated as a means for accurately predicting the degree of heating or cooling of the junction when the diode is pulsed into or out of avalanche. The model consists of an electrical network analog for the heat conduction process, and the transient analysis of this network has been performed using ... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Saturation of photovoltage and photocurrent in p-n junction solar cells

    Publication Year: 1976, Page(s):504 - 507
    Cited by:  Papers (6)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (424 KB)

    Expressions for the photovoltage and photocurrent of a strongly illuminated p-n junction solar cell are derived by solving the ambipolar diffusion equation. A complete boundary condition is derived for the junction, which is valid for all levels of injection. In the open-circuit case, results are in agreement with those given by earlier theories, while in the short-circuit case, the current is fou... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Multilayer gas-discharge display addressing

    Publication Year: 1976, Page(s):508 - 511
    Cited by:  Papers (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (440 KB)

    The application of layered addressing to gas-discharge displays has recently been demonstrated in the multi-layer gas-discharge panel. This paper describes the addressing principles and gives the addressing parameters for an 8-layer experimental panel, including voltage waveforms, current and bias levels, and impedance requirements. The extension of these principles to large panels, which require ... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Zener and avalanche breakdown in As-implanted low-voltage Si n-p junctions

    Publication Year: 1976, Page(s):512 - 518
    Cited by:  Papers (51)  |  Patents (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (664 KB)

    Implanted-diffused As layers in Si have been well-characterized and have been used in fabricating low-voltage n-p junctions. It is shown that these As layers form linearly graded junctions with a uniform B-doped background (ρ ≃ 0.006 Ω.cm). The grade constant of the As profile at the junction is known sufficiently well as a function of As dose, diffusion time, and temperature to al... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Improved TRAPATT performance by stabilizing mesa diode surfaces

    Publication Year: 1976, Page(s):519 - 521
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (352 KB)

    Substantial improvement in the reproducibility of extremely efficient S-band TRAPATT diodes is shown to result from sputtering layers of silicon oxynitride onto the exposed surfaces of the mesa diodes. The sputtered layers stabilize the device against changes in dc current-voltage characteristics induced by the TRAPATT mode. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Frequency limits of GaAs and InP field-effect transistors at 300 K and 77 K with typical active-layer doping

    Publication Year: 1976, Page(s): 519
    Cited by:  Papers (7)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (96 KB)

    InP FET's with active layer doping of 1017donors/ cm3have limiting values of fTroughly fifty per cent higher than those of equivalent GaAs devices for lengths ranging from 0.5 µm to 3 µm at 300 K, and from eighty percent to forty percent higher in this gate length range at 77 K. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • C-V Characteristics of GaP MOS diode with anodic oxide film

    Publication Year: 1976, Page(s):521 - 523
    Cited by:  Papers (1)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (384 KB)

    Gallium phosphide was anodically oxidized in an aqueous H2O2solution and MOS diodes were fabricated by the evaporation of aluminum. The resistivity and electric breakdown strength were higher than 1014Ω.cm and 6 × 106V/cm, respectively. Almost no frequency dispersion was observed in the C-V curves from 100 Hz to 1 MHz. The C-V curve showed the ... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • A polysilicon source and drain MOS transistor (PSD MOST)

    Publication Year: 1976, Page(s):523 - 525
    Cited by:  Papers (5)  |  Patents (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (472 KB)

    An MOS transistor is described in which the source and drain areas are obtained by diffusion from doped polycrystalline silicon. Polysilicon tracks form the interconnect with the diffusion areas without the need for contact windows. As a result transistor and junction sizes are reduced by a factor 2 or 3 over a normal structure. Polycrystalline silicon tracks in this new technique are of greater a... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Effective defect density for MOS breakdown: Dependence on oxide thickness

    Publication Year: 1976, Page(s):525 - 527
    Cited by:  Papers (10)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (392 KB)

    A procedure is introduced for measuring an effective density of defects that takes into account time-dependent dielectric breakdown in MOS devices. Measurements are obtained that show a surprising exponential decrease in this density with decreasing oxide thickness. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Electronic properties of the silicon-thermally grown tantalum oxide interface

    Publication Year: 1976, Page(s):527 - 529
    Cited by:  Papers (1)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (504 KB)

    MOS capacitance measurements showed that the Si-Ta2O5interface prepared by thermal oxidation at ∼530°C of vacuum deposited Ta film followed by a heat treatment at 350°C in N2-H2is characterized by a negative "oxide" charge (6 × 1011e/cm-2at flat-band) and by an interface state density of ∼ 1 × 10... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • [Back cover]

    Publication Year: 1976, Page(s): c4
    Request permission for commercial reuse | PDF file iconPDF (472 KB)
    Freely Available from IEEE

Aims & Scope

IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects.

 

Full Aims & Scope

Meet Our Editors

Editor-in-Chief

Giovanni Ghione
Politecnico di Torino,
10129 Torino, Italy

Phone +39 011 090 4064
email giovanni.ghione@polito.it