Notice
There is currently an issue with the citation download feature. Learn more

IEEE Transactions on Electron Devices

Issue 4 • April 1976

Filter Results

Displaying Results 1 - 19 of 19
  • [Front cover and table of contents]

    Publication Year: 1976, Page(s): c1
    Request permission for commercial reuse | PDF file iconPDF (173 KB)
    Freely Available from IEEE
  • Electrically alterable avalanche-injection-type MOS READ-ONLY memory with stacked-gate structure

    Publication Year: 1976, Page(s):379 - 387
    Cited by:  Papers (39)  |  Patents (11)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (896 KB)

    Design theory and experimental results of the WRITE and ERASE properties of a rewritable and nonvolatile avalanche-injection-type memory are reported. The memory transistor has the stacked-gate structure of a floating gate and a control gate. The threshold-voltage shift of the transistor due to injected charge is controlled by applied potential on the control gate which reduces the avalanche break... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • GaAs microwave power FET

    Publication Year: 1976, Page(s):388 - 394
    Cited by:  Papers (25)  |  Patents (8)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (872 KB)

    A design consideration for an X-band GaAs power FET, features of the fabrication process, and electrical characteristics of the FET are described. Interdigitated 53 source and 52 drain electrodes and an overlaid gate electrode for connecting 104 Schottky gates in parallel have been introduced to achieve a 1.5-µm-long and 5200-µm-wide gate FET. A sheet grounding technique has been develop... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Nonlinear noise theory for IMPATT diodes

    Publication Year: 1976, Page(s):395 - 411
    Cited by:  Papers (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1720 KB)

    Previous studies have yielded good qualitative understanding of noise characteristics in IMPATT diodes under large-signal conditions. However, a coherent approach to describing correlation effects in a rigorous manner and demonstrating their relationships to AM and FM noise spectra has been lacking. The present work is intended to fill this need in the framework of a Read diode model with small ba... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Determination of wavelength and excitation voltage for X-ray lithography

    Publication Year: 1976, Page(s):412 - 418
    Cited by:  Papers (1)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (832 KB)

    The exposure time of an X-ray lithography system is minimized by the appropriate choice of X-ray wavelength and target excitation voltage, within the constraints of a specified resolution and contrast in the exposed resist pattern. The factors that must be considered in making this choice are the X-ray source brightness of various target materials, the continuum emission spectrum of the target, th... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Low-level avalanche multiplication in IGFET's

    Publication Year: 1976, Page(s):419 - 425
    Cited by:  Papers (24)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (648 KB)

    Results are presented for both theoretical and experimental analyses of low-level avalanche multiplication in an insulated gate field-effect transistor (IGFET). The theoretical model is derived from the ionization integral using a linear field approximation for the electric field at the drain. Experimental multiplication factors are determined by measuring channel and substrate currents. The model... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Field-enhanced trapping and surface effects on monolithic integrated planar GaAs Gunn diodes

    Publication Year: 1976, Page(s):426 - 428
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (320 KB)

    The effects of the thickness of the semi-insulating substrate as well as the effects of surface recombination and surface charges are studied concerning the performance of planar Gunn diodes with the aid of a digital computer. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • A planar single-substrate AC plasma display

    Publication Year: 1976, Page(s):429 - 437
    Cited by:  Papers (12)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1064 KB)

    A novel method is described for constructing an acsustained gas-discharge display (plasma panel). Electrodes and insulating layers are applied alternatively on a single base substrate to produce a matrix of insulated crossovers. A second clear substrate is used to contain gas on the electrode side of the base substrate where glow discharge occurs. As in conventional two-substrate panels, internal ... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • The influence of source impedance on the electrooptical switching behavior of LED's

    Publication Year: 1976, Page(s):438 - 441
    Cited by:  Papers (4)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (368 KB)

    Electrooptical switching of LED's is shown to be well described by a very simple equivalent circuit, the decisive elements of which are the diffusion capacitance and the lead inductance. Theory and experimental data indicate that even small lead inductances diminish performance if the LED is driven by a low-impedance source. Using a switched current source instead is likely to give the fastest pos... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Optimized numerical models for semiconductor devices: Part I

    Publication Year: 1976, Page(s):442 - 447
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (672 KB)

    This article presents some results from a study concerned with the trade-off between efficiency of numerical computation and accuracy of numerical models for semiconductor devices. The approach taken in this study was to use nonuniform grids in the finite difference equations approximating the semiconductor partial differential equations. A constrained minimization problem was formulated which ana... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Optimized numerical models for semiconductor devices: Part II

    Publication Year: 1976, Page(s):447 - 452
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (624 KB)

    This article presents some results from a study that was concerned with the trade-off between efficiency of numerical computation and accuracy of numerical models for semiconductor devices. The approach taken in this study was to use optimized nonuniform grids in the finite difference equations approximating the semiconductor partial differential equations. This paper presents a second choice of p... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • High efficiency CW transferred-electron oscillator with optimized doping profile

    Publication Year: 1976, Page(s):452 - 459
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (968 KB)

    This study is aimed at helping to design X-band CW transferred-electron oscillators with higher performance. Temperature rise in devices operating in the accumulation layer mode is analyzed both with heat sink negative and heat sink positive. Efficiencies and output powers in both polarities are calculated and compared. The calculation shows efficiency in CW operation is drastically improved by qu... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • The principle and test results of a large-raster no-mesh return-beam electron-camera readout system

    Publication Year: 1976, Page(s):459 - 465
    Cited by:  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1304 KB)

    An electrostatic deflecting lens (EDL) return-beam, electron-camera readout system has been developed and tested. The unique features of the system are the following: 1) there is no field stopping mesh used, therefore, ultra-high resolution becomes possible; 2)the normal landing condition is obtained by making the deflection center coincide with the focal point of the final lens; 3) a large number... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Freeze-out effects on n-channel MOSFET's

    Publication Year: 1976, Page(s):466 - 470
    Cited by:  Papers (5)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (394 KB)

    Surface admittance measurements have been carried out on View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Amorphous—Crystalline heterojunction transistors

    Publication Year: 1976, Page(s):471 - 477
    Cited by:  Papers (1)  |  Patents (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1032 KB)

    The characteristics of a new hybrid amorphous-crystalline three-terminal device are described in detail. The device uses a threshold-switching-type chalcogenide glass as the emitter, with a p-type crystalline-silicon base and an n-type silicon collector. When the amorphous emitter is in the off state, the small-signal current gain is significantly smaller than unity. However, once the voltage acro... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Frequency response of GaAlAs light-emitting diodes

    Publication Year: 1976, Page(s):478 - 480
    Cited by:  Papers (12)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (368 KB)

    The frequency response of epitaxial GaAlAs single-heterojunction light-emitting diodes was investigated as a function of active-layer hole-concentration and diode area. The modulation bandwidth can be considerably increased by high doping, but an upper limit is imposed by the space-charge capacitance of the diode. Further improvement of the frequency characteristics can be realized by reduction of... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Delay time of switching diodes based on space-charge overlapping

    Publication Year: 1976, Page(s):480 - 481
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (264 KB)

    Transient behavior of switching diodes based on space-charge overlapping has been analyzed. The delay time was derived analytically and compared satisfactorily with experiments on amorphous threshold switches. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Planar isolated GaAs devices produced by molecular beam epitaxy

    Publication Year: 1976, Page(s):481 - 484
    Cited by:  Papers (9)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (472 KB)

    This paper reports the fabrication of low parasitic capacitance planar beam-leaded structures by means of a novel new technology. The structure is produced by the simultaneous deposition of single crystal and semi-insulating polycrystalline gallium arsenide utilizing the molecular beam epitaxial process. Schottky barrier millimeter wave mixer diodes fabricated with the polycrystalline isolated mat... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • [Back cover]

    Publication Year: 1976, Page(s): c4
    Request permission for commercial reuse | PDF file iconPDF (1253 KB)
    Freely Available from IEEE

Aims & Scope

IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects.

 

Full Aims & Scope

Meet Our Editors

Editor-in-Chief

Giovanni Ghione
Politecnico di Torino,
10129 Torino, Italy

Phone +39 011 090 4064
email giovanni.ghione@polito.it