IEEE Transactions on Electron Devices

Issue 3 • March 1976

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  • [Front cover and table of contents]

    Publication Year: 1976, Page(s): c1
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  • Change in editorial board

    Publication Year: 1976, Page(s): 307
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (208 KB)

    First Page of the Article
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  • Electrostatic separation of a charged-particle layer between electrodes

    Publication Year: 1976, Page(s):308 - 312
    Cited by:  Papers (8)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (456 KB)

    The problem of electrostatic separation of a layer of charged particles of small size compared with the layer thickness was studied. The particle layer initially is confined between two electrodes, and experiments were carried out on a dispersion of particles in a liquid to determine the mass fraction remaining on each electrode after electrode separation. The dependence of the mass fraction on pa... View full abstract»

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  • A protecting layer for the dielectric in AC plasma panels

    Publication Year: 1976, Page(s):313 - 318
    Cited by:  Papers (119)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (1000 KB)

    One of the important problems in the development of ac plasma panels is to produce panels that maintain stable characteristics for a long time. A new idea for using a protecting layer over the dielectric layer which isolates the electrodes from the gas was examined and good results were obtained. Moreover, besides stability, a considerable improvement of operating characteristics was achieved, inc... View full abstract»

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  • Discharge-time lag in a plasma display—Selection of protection layer (γ surface)

    Publication Year: 1976, Page(s):319 - 324
    Cited by:  Papers (4)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (632 KB)

    The discharge-time lag in an ac plasma display panel was studied and the discharge phenomena in the cells were considered. As a result, it was confirmed that time lag characteristics are unique in ac-driven capacitively coupled discharge elements and that such characteristics have a decisive effect on the dynamic characteristics. It was further clarified that the secondary emission coefficient ... View full abstract»

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  • A highly stabilized AC plasma display

    Publication Year: 1976, Page(s):324 - 328
    Cited by:  Papers (1)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (520 KB)

    Achieving overall stability of the ac plasma display/ memory device is vital to solving major problems to secure maintenance-free operation in its practical use. The stability improvement reported in this paper has been achieved by improving driving waveforms for the panel. The main improvements were: finding an address-pulse shape suitable for the panel characteristics, applying a proper address ... View full abstract»

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  • Surface-discharge-type plasma display panel

    Publication Year: 1976, Page(s):328 - 331
    Cited by:  Papers (3)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (408 KB)

    The surface-discharge type plasma display panel does not require accurate spacing between two plates. Also, the number of manufacturing processes can be reduced to nearly half those required for opposed-discharge-type panels, resulting in low cost. The relationship between the principal design factors of a surface-discharge-type panel and the firing voltage in the nonmemory mode is discussed, base... View full abstract»

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  • Theory of a new three-terminal microwave power amplifier

    Publication Year: 1976, Page(s):332 - 343
    Cited by:  Papers (9)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (1248 KB)

    The feasibility of a new three-terminal linear power amplifier has been demonstrated both theoretically and experimentally from 0.5 to 3.0 GHz. The new amplifier is similar to an n-p-n bipolar transistor in configuration but develops extra power gain through avalanche multiplication and by the use of transit time in the collector. Major differences in the construction of the two devices are in the... View full abstract»

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  • A transistor design for high fTat low currents

    Publication Year: 1976, Page(s):343 - 347
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (536 KB)

    A design and processing technique allowing fabrication of devices with very small junction capacitances is presented. Emitter and base areas of the smallest device, called a microemitter, are reduced to about 3µ2and 12µ2, respectively, and a comparison is made with larger geometries fabricated on the same wafer. Ion implanted microemitter devic... View full abstract»

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  • Characterization of space-charge properties of a linearly graded p-n junction by an approximate "Regional" analysis method

    Publication Year: 1976, Page(s):348 - 353
    Cited by:  Papers (7)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (536 KB)

    A new approximate analysis of the linearly graded p-n junction is developed which gives solutions for the space-charged density and mobile carrier densities as distributions within a finite space-charge width. The results obtained are in good agreement with the true unbounded solution of Poisson's equation and represent a considerable improvement in space-charge modeling over previous approaches t... View full abstract»

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  • Analysis of semiconductors with field-dependent mobility

    Publication Year: 1976, Page(s):354 - 361
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (720 KB)

    Using the time domain analysis of Lagrangian approach, the small-signal behavior of a semiconductor with field-dependent mobility under various contact conditions is analyzed. A generalized closed form solution for an impulse current response is derived when the carrier velocity characteristic is expressed by a piecewise linear function. This result gives an accurate description of the transient p... View full abstract»

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  • Capacitance of a hyperabrupt tuning varactor diode

    Publication Year: 1976, Page(s):361 - 363
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (384 KB)

    The voltage variable capacitor has been used in tuning circuits for some time. The hyperabrupt varactor diode is fabricated to yield an especially steep capacitance-voltage characteristic under reverse bias conditions. An analysis of this diode yields an analytical expression for capacitance versus applied reverse bias which agrees remarkably well with the experimentally determined C-V curves. View full abstract»

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  • GaAs Schottky mixer diode with integral guard layer structure

    Publication Year: 1976, Page(s):363 - 364
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (320 KB)

    Schottky-barrier microwave mixer diodes of GaAs have been fabricated in a novel epitaxially grown high resistivity guard layer configuration. These devices are capable of withstanding RF pulse energies of up to 2 ergs with no deterioration in noise figure performance. Such high resistance to RF spike burnout is attributed to device planarity and passivation resulting from the integral guard layer ... View full abstract»

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  • A new semiconductor switching device

    Publication Year: 1976, Page(s):364 - 366
    Cited by:  Papers (1)
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    A new bipolar-type semiconductor switching device is proposed, fabricated by two diffusion processes and without any isolation technique. The device has an n+-diffused small electrode instead of a gate electrode in the MOS transistor structure. This device can have high photo sensitivity in the charge storage mode operation. View full abstract»

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  • The effect of gold concentration gradients on thyristor switching properties

    Publication Year: 1976, Page(s):366 - 368
    Cited by:  Papers (8)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (384 KB)

    Different gold concentration profiles in thyristors result in different switching behavior. The injected carrier concentration profiles which can be obtained from the local recombination radiation intensities give insight into these effects. View full abstract»

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  • Characterization of current transport of narrow-base bipolar transistors by the regional approach

    Publication Year: 1976, Page(s):368 - 370
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (328 KB)

    It is demonstrated that the Ic-VBEtransport characteristics of a narrow-base bipolar transistor can be accurately computed using the regional approach if an appropriate characterization of the effects of mobile carriers in the emitter space-charge region is employed, but that neglect of such effects can lead to serious errors. A new method of approximate analysis for a linear... View full abstract»

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  • Sweep oscillation mode of GaAs IMPATT diode

    Publication Year: 1976, Page(s):370 - 372
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    Properties of the sweep oscillation mode of GaAs IMPATT diodes in the millimeter-wave region are studied in comparison with Si IMPATT diodes. In spite of their narrower depletion width, the GaAs diodes oscillate at lower frequencies than the Si devices. This can be explained by using the newly measured drift velocity of GaAs. View full abstract»

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  • Measurement of the electron drift velocity in avalanching GaAs diodes

    Publication Year: 1976, Page(s):372 - 374
    Cited by:  Papers (3)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (400 KB)

    The scattering-limited drift velocity vsnof electrons in an avalanching GaAs diode is estimated by measuring the space-charge resistance. The result shows a lower value of vsn(5.7 ± 0.3) × 106cm/s than the generally accepted value 8 × 106cm/s at room temperature. The temperature dependence of vsnis also measured. View full abstract»

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  • Low temperature ohmic contacts to gallium arsenide using In and Al

    Publication Year: 1976, Page(s): 374
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (168 KB)

    A method of making ohmic contact to n-type GaAs by means of micro-alloying at 320°C for 90 s, resulting in a specific contact resistance of approximately 0.1 Ω.cm2is described. This technique involves an aluminum overlay which prevents puddling and thus maintains contact geometry. Such contacts, having a relatively high specific contact resistance, have the advantage of being ... View full abstract»

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  • [Back cover]

    Publication Year: 1976, Page(s): c4
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Aims & Scope

IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects.

 

Full Aims & Scope

Meet Our Editors

Editor-in-Chief

Giovanni Ghione
Politecnico di Torino,
10129 Torino, Italy

Phone +39 011 090 4064
email giovanni.ghione@polito.it