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IEEE Transactions on Electron Devices

Issue 11 • Nov. 1975

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Displaying Results 1 - 25 of 71
  • [Front cover and table of contents]

    Publication Year: 1975, Page(s): c1
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  • Noise in MOS bucket-brigade devices

    Publication Year: 1975, Page(s):977 - 981
    Cited by:  Papers (19)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (512 KB)

    Previous calculations of noise in bucket-brigade devices (BBD's) have ignored subthreshold leakage current even though BBD's operate in the subthreshold region over most of their useful frequency range. In this work, subthreshold leakage is included in the calculation, but surprisingly, it makes little difference in the end result. The noise spectrum in p-channel BBD's is measured and agrees well ... View full abstract»

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  • A five-parameter model for current and cross modulation in field-effect transistors with high drain voltage

    Publication Year: 1975, Page(s):982 - 988
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (760 KB)

    A new five-parameter model for the behavior of field-effect transistors with high drain voltage has been developed. The resulting single expression is shown to predict the drain-current-gate-voltage characteristics of a variety of devices with an accuracy of ±0.002 V over many decades of drain current. Several methods for the evaluation of model parameters are discussed. The effect of tempera... View full abstract»

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  • The potential and electric field at the metallurgical boundary of an abrupt p-n semiconductor junction

    Publication Year: 1975, Page(s):988 - 994
    Cited by:  Papers (4)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (832 KB)

    Analytical equations are presented that rigorously establish the electrostatic potential and electric field at the metallurgical transition point of an abrupt p-n semiconductor junction. From these equations, the classical depletion-layer approximation is shown to be rigorously correct only when (NA= ND), although this solution remains adequate for engineering purposes if 1.0... View full abstract»

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  • Modeling of an ion-implanted silicon-gate depletion-mode IGFET

    Publication Year: 1975, Page(s):995 - 1001
    Cited by:  Papers (32)  |  Patents (4)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (664 KB)

    A dc model is-presented for the ion-implemented silicon-gate depletion-mode IGFET from which the device terminal behavior can be determined. The device equations are derived based on the concept of a finite semiconductor capacitance in the channel region whereby the depth of the implanted channel is taken into account. The model parameter is shown to be easily measurable experimentally. The validi... View full abstract»

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  • A novel voltage tuneable infrared spectrometer-detector

    Publication Year: 1975, Page(s):1001 - 1009
    Cited by:  Papers (2)  |  Patents (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1016 KB)

    A novel voltage tuneable spectrometer-detector has been demonstrated whose principles are associated with the electric subbands existent at the interface between silicon and silicon dioxide. The photoresistive response of n-channel MOSFET structures to radiation resonant with energy levels in the inversion layer has been characterized and compared with existent theory. Operating at 4.2 K, typical ... View full abstract»

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  • Characteristics of large-area filamentary guns used for the E-beam stabilization of gas lasers

    Publication Year: 1975, Page(s):1010 - 1016
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (792 KB)

    The development of high-energy electric-discharge lasers has created the requirement for high-voltage large-area uniform-current-density electron beams. This paper describes the characteristics for a class of filamentary electron guns of novel electrode configuration that satisfies these requirements. Expressions are derived for the gun potentials, electric fields, and space-charge-limited current... View full abstract»

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  • Properties of ESFI MOS transistors due to the floating substrate and the finite volume

    Publication Year: 1975, Page(s):1017 - 1023
    Cited by:  Papers (105)  |  Patents (13)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (744 KB)

    The specific current-voltage characteristics of epitaxial silicon films on insulator (ESFI®) SOS MOS transistors are shown, discussed in comparison to bulk silicon MOST's, and explained by the differences in geometrical considerations, charge distribution, and operation mode, The ESFI MOST's are produced on silicon islands, in most applications, the electrical substrate is at floating potenti... View full abstract»

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  • InP Schottky-gate field-effect transistors

    Publication Year: 1975, Page(s):1023 - 1030
    Cited by:  Papers (18)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (904 KB)

    MESFET's with gates 1 µm long were fabricated in LPE layers of InP on Cr-doped InP substrates. The quality of the LPE material is characterized by an electron concentration of 4 × 1015cm-3with a mobility of 2.6 × 104cm2V-1s-1at 77 K for growths from undoped melts. The devices have current gain cutoff frequencies of 20... View full abstract»

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  • Prediction of fTand hfeat high collector currents

    Publication Year: 1975, Page(s):1031 - 1037
    Cited by:  Papers (4)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (736 KB)

    A simple model has been used to calculate the fTand hfefalloff in bipolar transistors operating under high-level injection conditions in the collector. The calculated values are in close agreement with the experimental data. Conventional calculations of fTfalloff ignore the effect of the collector capacitance charging time in the calculation of the total emitter-co... View full abstract»

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  • Threshold voltage shift of n-channel Si-gate MOSFET's

    Publication Year: 1975, Page(s):1038 - 1043
    Cited by:  Papers (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (624 KB)

    The relationship between the threshold voltage shift of the n-channel Si-gate MOSFET and the implant dose of boron ions has been examined theoretically and experimentally when these ions are implanted with an energy of 60 keV through a gate oxide of 1200 Å into a p-type silicon substrate of the acceptor concentration of 7 × 1014/cm3. The effect of high-temperature t... View full abstract»

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  • Power-delay energy comparison of bipolar and IGFET digital devices and circuits

    Publication Year: 1975, Page(s):1044 - 1045
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (304 KB)

    Previous analysis shows the IGFET to be dynamically equivalent to a bipolar transistor operating with a base series capacitance equal to the IGFET gate capacitance. This equivalence illuminates the physical reasons for disadvantageous power-delay energy characteristics compared to bipolar devices, devices which operate with Boltzmann barrier principles and thus seem to most closely approach the fu... View full abstract»

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  • Electron and hole drift velocity measurements in silicon and their empirical relation to electric field and temperature

    Publication Year: 1975, Page(s):1045 - 1047
    Cited by:  Papers (272)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (392 KB)

    The drift velocity of electrons and holes in silicon has been measured in a large range of the electric fields (from 3 . 102to 6 . 104V/cm) at temperatures up to 430 K. The experimental data have been fitted with a simple formula for the temperatures of interest. The mean square deviation was in all cases less than 3.8 percent. A more general formula has also been derived whi... View full abstract»

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  • Two-dimensional analysis of triode-like operation of junction gate FET's

    Publication Year: 1975, Page(s):1047 - 1049
    Cited by:  Papers (5)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (384 KB)

    Triode-like operation of junction gate FET's is analyzed by two-dimensional computer simulation. Triode-like characteristics are shown to appear with the channel normally off and the depletion layer reaching the drain electrode. Triode-like current arises from carrier injection from the source electrode into the depleted region. Triode-like operation is achieved without intrinsic material. View full abstract»

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  • Subthreshold slope for insulated gate field-effect transistors

    Publication Year: 1975, Page(s):1049 - 1051
    Cited by:  Papers (11)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (272 KB)

    An explicit expression has been derived for the subthreshold slope of an insulated gate field-effect transistor. This expression is used to explore the influence of surface band-bending, gate insulator thickness, substrate doping, substrate bias, and temperature. View full abstract»

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  • A modified linear sweep technique for MOS-C generation rate measurements

    Publication Year: 1975, Page(s):1051 - 1052
    Cited by:  Papers (7)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (264 KB)

    A modified linear sweep technique is described which allows one to rapidly determine the carrier generation rate versus semiconductor depletion width dependence exhibited by deeply depleted MOS-C structures. Although requiring more sophisticated instrumentation, the modified procedure is more flexible, more accurate, and less time-consuming than the original technique. View full abstract»

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  • Autoprobe testing for emitter—Collector spikes in microwave bipolar transistors

    Publication Year: 1975, Page(s):1052 - 1053
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (272 KB)

    Direct-current characteristics of microwave bipolar transistors with emitter-collector spikes are examined. Measured data from a large sample of spiked transistors are evaluated and related to the FET model of a spike. A suitable test for spiking is developed for use in a dc autoprobe program. Typical results from a wafer are presented. View full abstract»

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  • I-4 elastically enhanced nonradiative recombination in AlGaAs-GaAs double heterostructure laser material

    Publication Year: 1975, Page(s):1054 - 1055
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    Freely Available from IEEE
  • I-2 injection stimulated dislocation motion in semiconductors

    Publication Year: 1975, Page(s): 1054
    Request permission for commercial reuse | PDF file iconPDF (153 KB)
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  • I-1 studies of recombination enhanced defect motion in III-V semiconductors

    Publication Year: 1975, Page(s): 1054
    Request permission for commercial reuse | PDF file iconPDF (153 KB)
    Freely Available from IEEE
  • I-3 laser-excited photoluminescence of three-layer GaAs double-heterostructure laser material

    Publication Year: 1975, Page(s): 1054
    Request permission for commercial reuse | PDF file iconPDF (153 KB)
    Freely Available from IEEE
  • I-6 scanned surface photovoltage images of defects on semiconductors

    Publication Year: 1975, Page(s): 1055
    Request permission for commercial reuse | PDF file iconPDF (186 KB)
    Freely Available from IEEE
  • I-7 dependence of performance on dislocation density in diffused lead-tin-telluride (Pb1-xSnxTe) lasers

    Publication Year: 1975, Page(s):1055 - 1056
    Cited by:  Papers (2)
    Request permission for commercial reuse | PDF file iconPDF (346 KB)
    Freely Available from IEEE
  • I-5 the relationship between surface and bulk defects in DH LPE GaAs/AlxGa1-xAs wafers

    Publication Year: 1975, Page(s): 1055
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    Freely Available from IEEE
  • IIA-3 buried etched striped substrate heterostructure laser

    Publication Year: 1975, Page(s): 1056
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    Freely Available from IEEE

Aims & Scope

IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects.

 

Full Aims & Scope

Meet Our Editors

Editor-in-Chief

Giovanni Ghione
Politecnico di Torino,
10129 Torino, Italy

Phone +39 011 090 4064
email giovanni.ghione@polito.it