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Electron Devices, IEEE Transactions on

Issue 10 • Date Oct. 1975

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Displaying Results 1 - 25 of 27
  • [Front cover and table of contents]

    Publication Year: 1975 , Page(s): c1
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    Freely Available from IEEE
  • Noise figure of the MCP image intensifier tube

    Publication Year: 1975 , Page(s): 821 - 829
    Cited by:  Papers (3)  |  Patents (2)
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (936 KB)  

    Expressions are obtained for the noise figure of the photoelectric image intensifier type of tube using a microchannel plate in the linear gain mode, including effects of dark current and ionic or optical feedback in the MCP, and of the same device using the MCP in an electron-counting mode. Comparison shows that the latter should be a preferable mode of operation, if practical problems can be ove... View full abstract»

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  • Applications of ternary III-V compounds to high-speed microwave modulation

    Publication Year: 1975 , Page(s): 829 - 836
    Cited by:  Papers (1)
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (888 KB)  

    High-speed microwave modulation is obtained by exploiting the intervalley electron transfer time in certain ternary III-V compounds. Saturation of the net carrier drift velocity due to intervalley electron transfer at threshold fields below 3 kV/cm is reported in GaA1-xPxand AlxGa1-xAs for x = 0.315 ± 0.01 and 0.38 ± 0.02, respectively. The equ... View full abstract»

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  • Small-signal BARITT noise measures

    Publication Year: 1975 , Page(s): 836 - 841
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (600 KB)  

    A one-dimensional small-signal noise model of p+nvp+and metal (M) nvp+BARITT diodes has been developed. Included in the model is a detailed description of the physical mechanisms which are present near the injecting contact of either type of diode. The equations resulting from the model have been solved to give the small-signal diode noise measure and admittance as... View full abstract»

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  • A mechanism for catastrophic failure of avalanche diodes

    Publication Year: 1975 , Page(s): 842 - 849
    Cited by:  Papers (8)
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (920 KB)  

    A simple computer model of the dc electrical-thermal behavior of a Schottky-barrier GaAs IMPATT diode has been modified to include the effects of temperature-dependent thermal resistance. This has made possible the computation of dc V-I characteristics for various IMPATT diode designs and parameters. Computed terminal V-I characteristics, as well as E-J characteristics for points within the deplet... View full abstract»

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  • Surface doping using ion implantation for optimum guard layer design in COS/MOS structures

    Publication Year: 1975 , Page(s): 849 - 857
    Cited by:  Papers (3)  |  Patents (1)
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (1016 KB)  

    Theory and experimental results using COS/MOS devices are presented for using ion-implanted surface guard layers to replace guard bands in LSI COS/MOS circuits. The function of a guardband is to reduce leakage between neighboring devices; surface guard layers accomplish the same end with the addition of a considerable reduction in the space required for a given COS/MOS memory cell. The price paid ... View full abstract»

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  • Operation of CCD's with stationary and moving electron-beam input

    Publication Year: 1975 , Page(s): 857 - 861
    Cited by:  Papers (2)
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (640 KB)  

    For the detection of either stationary or moving objects in a LLLTV (low light level TV) environment with a charge coupled device (CCD), two techniques have been demonstrated which will result in improved detection. These are 1) use of an EBS (electron bombarded silicon) or EBIC Mode CCD which provides gain by accelerating photogenerated electrons and 2) use of a motion compensation mode where cha... View full abstract»

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  • Electrical characteristics of boron-implanted n-channel MOS transistors for use in logic circuits

    Publication Year: 1975 , Page(s): 862 - 868
    Cited by:  Papers (2)
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (696 KB)  

    Adapted formulas describing the current-voltage relationship of MOS transistors with nonuniform substrate doping are presented. Only the case Where, at zero background polarization, the depletion layer is larger than the implanted impurity depth, is considered. Attention is given to the experimental determination of the effective mobility, the space-charge-layer depth and, if the impurity profile ... View full abstract»

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  • A two wave theory of traveling-wave tubes and backward-wave oscillations

    Publication Year: 1975 , Page(s): 869 - 880
    Cited by:  Papers (6)
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (1000 KB)  

    Starting from Pierce's small-signal TWT equations, a two-wave theory for complicated TWT's and BWO's is developed. Explicit gain expressions for TWT's with severs and velocity tapers are given. A detailed treatment is given of a BWA structure with a single-step velocity taper in the center. The BWO start oscillation current is calculated as a function of the taper strength. The effciency of a step... View full abstract»

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  • Calculation of coupled-cavity TWT performance

    Publication Year: 1975 , Page(s): 880 - 890
    Cited by:  Papers (16)
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (1192 KB)  

    A method of calculation of coupled-cavity TWT performance which is programmable for fast and economical calculation on a time-sharing computer is presented. The tube is modeled as a sequence of interaction gaps and tunnels, with cavities associated with each gap. The fields are expanded in terms of a sequence of stationary waves anchored on each gap, instead of a set of traveling waves. Space-char... View full abstract»

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  • Measured and theoretical nonlinear phase distortion in traveling-wave tubes

    Publication Year: 1975 , Page(s): 890 - 897
    Cited by:  Papers (1)
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (880 KB)  

    The nonlinear phase distortion in traveling-wave tubes is calculated in order to obtain its dependence on design and working parameters by using a large-signal theory. The relation between the nonlinear phase distortion and the output power due to the reduction of the average electron velocity is also studied. AM-PM conversion coefficients are directly measured along a tube with no local attenuato... View full abstract»

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  • GaAs dual-gate Schottky-barrier FET's for microwave frequencies

    Publication Year: 1975 , Page(s): 897 - 904
    Cited by:  Papers (26)  |  Patents (1)
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (888 KB)  

    The benefits inherent in the tetrode structure and the potential of GaAs are combined to realized a dual-gate FET with low noise and a wide dynamic range at microwave frequencies. A design theory of the dual-gate FET is constructed on the basis of the Lehovec-Zuleeg model for single-gate FET's. The theory has led to a new device structure having a second gate with a deeper pinchoff voltage than th... View full abstract»

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  • The IRicon: A passive infrared camera tube

    Publication Year: 1975 , Page(s): 904 - 910
    Cited by:  Papers (1)
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (1128 KB)  

    The IRicon is an IR-sensitive photoconductive TV camera tube. Recently declassified, it was developed for the military to whom many tubes were supplied in direct-readout or return-beam form with magnetic or electrostatic focus and deflection. Passive imaging of low-temperature objects such as humans or vehicles was observed with a normal TV speed of response. Resolution varied from about 100 TV li... View full abstract»

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  • Calculation of the diffusion curvature related avalanche breakdown in high-voltage planar p-n junctions

    Publication Year: 1975 , Page(s): 910 - 916
    Cited by:  Papers (18)
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (808 KB)  

    Avalanche multiplication calculations are performed in high-voltage planar p-n junctions to determine breakdown voltage limitations imposed by curvature effects. The issue of choice of ionization coefficient for avalanche multiplication is discussed. From the calculations, a series of design curves and equations are generated which relate the breakdown voltage and peak electric field to those of a... View full abstract»

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  • Experimental characterization of gold-doped infrared-sensing MOSFET's

    Publication Year: 1975 , Page(s): 916 - 924
    Cited by:  Papers (5)
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (1008 KB)  

    The operation of a new type of infrared photon detector is described. This device is a gold-doped n-channel MOSFET that employs impurity photoionization to modulate its drain-to-source conductance. A simple mathematical model is developed whereby the infrared-sensing MOSFET (IRFET) can be analyzed, and experimental results that verify the model are provided. The near-infrared, i.e., wavelengths fr... View full abstract»

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  • Improved methods for space-charge calculations in electron-beam analysis programs

    Publication Year: 1975 , Page(s): 924 - 930
    Cited by:  Papers (1)
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (808 KB)  

    A new method for the evaluation of steady-state space-charge distributions in electron-beam devices is presented, for use in numerical-analysis computer programs. Its features include simplicity of implementation and improved accuracy. These characteristics are illustrated by various electron-flow systems. The difficulty of convergence to the steady-state solution for systems incorporating strong ... View full abstract»

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  • A silicon diode array scan converter for high-speed transient recording

    Publication Year: 1975 , Page(s): 930 - 938
    Cited by:  Papers (5)
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (1120 KB)  

    A double-ended scan converter tube has recently been developed which uses a silicon diode array for the storage target. The purpose of the device is to capture high-speed single transients or low-repetition-rate signals and to retain the information until it can be read out at speeds slow enough for handling by conventional processing and display circuits. Improvements in wide-bandwidth deflection... View full abstract»

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  • High-frequency MOS digital capacitor

    Publication Year: 1975 , Page(s): 938 - 944
    Cited by:  Papers (3)
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (1024 KB)  

    A MOS digital capacitor capable of operation at VHF and UHF frequencies is described. This new device is made up of a parallel combination of MOS capacitors each of which can be individually switched between two distinct capacitance values; a maximum binary state being the high-frequency MOS inversion capacity and the minimum being that of a deep-depletion MOS device, Switching is accomplished by ... View full abstract»

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  • Microwave properties of nonlinear MIS and Schottky-barrier microstrip

    Publication Year: 1975 , Page(s): 945 - 956
    Cited by:  Papers (39)  |  Patents (3)
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (1320 KB)  

    It is shown that metal-insulatior-semiconductor (MIS) and Schottky-barrier microstrip structures having substrate resistivities within a certain range propagate slow waves with phase velocities that are dependent upon the instantaneous voltage at each point along the line. This and other useful properties of these microstrips can be used advantageously in a number of microwave devices. Loss measur... View full abstract»

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  • Some methods for defining design rules

    Publication Year: 1975 , Page(s): 956 - 958
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (328 KB)  

    Some new methods to define design rules for integrated-circuits by evaluating a large quantity of results measured from test structures are described. To define the minimum area of a contact hole, more detailed methods are discussed than simple yield analysis: for example, the analysis of the resistances measured or of the local distribution of defects. Using a special test structure of misaligned... View full abstract»

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  • Efficiency and optimum DC bias field for second harmonic generation due to hot-electrons in nonpolar semiconductors

    Publication Year: 1975 , Page(s): 958 - 960
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (376 KB)  

    The efficiency of the yield of second harmonics in nonpolar nondegenerate semiconductors is estimated using an improved hyperbolic relation to describe the nonlinear velocity-electric-field relation from the ohmic region up to the saturation region at room temperature. For n-Ge and n-Si, an efficiency of about 4 percent is obtained for the optimum dc bias field, about V0/µ... View full abstract»

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  • p-Channel MOS transistor in indium antimonide

    Publication Year: 1975 , Page(s): 960 - 961
    Cited by:  Papers (1)
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (296 KB)  

    A p-channel MOS transistor in InSb single crystal, operating at 77 K, is described. The source and drain are defined by etching a mesa structure in a cadmium diffused p layer into a tellurium-doped InSb substrate. The gate is formed by evaporation of chromium gold on top of a layer of SiO2, deposited at 215°C. The MOS transistor is characterized by a threshold voltage of -3 V and a... View full abstract»

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  • Use of drain capacitance—Voltage characteristics as a process control tool for the threshold voltage of Silicon gate MOSFET's

    Publication Year: 1975 , Page(s): 961 - 962
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (256 KB)  

    First Page of the Article
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  • Reduction of popcorn noise in integrated circuits

    Publication Year: 1975 , Page(s): 962 - 964
    Cited by:  Papers (2)
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (632 KB)  

    Popcorn (burst) noise continues to deteriorate the operation of linear IC devices. Reduction of popcorn noise by a few simple modifications in the manufacturing process is reported in this paper. Annealing in an HC1 atmosphere to getter metal impurities and slow pulling after emitter deposition to diminish stress-induced junction defects appear to reduce the popcorn noise significantly. View full abstract»

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  • Enhanced shot noise in p-n diodes due to thermal feedback

    Publication Year: 1975 , Page(s): 964 - 965
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (512 KB)  

    Mueller's mechanism for obtaining enhanced shot noise in p-n diodes due to thermal feedback is evaluated for a small diode represented by a lumped circuit thermal model. The excess noise is negligible at low-power dissipation but very significant if the device can operate near thermal instability. For devices represented by a distributed thermal circuit, the device can show excess noise with a spe... View full abstract»

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Aims & Scope

IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects.

 

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Meet Our Editors

Acting Editor-in-Chief

Dr. Paul K.-L. Yu

Dept. ECE
University of California San Diego