IEEE Transactions on Electron Devices

Issue 6 • June 1975

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Displaying Results 1 - 19 of 19
  • [Front cover and table of contents]

    Publication Year: 1975, Page(s): c1
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  • Surface potential equilibration method of setting charge in charge-coupled devices

    Publication Year: 1975, Page(s):305 - 309
    Cited by:  Papers (56)  |  Patents (6)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (656 KB)

    A method of setting charge in a charge-coupled device (CCD) is described whereby the input diode is suitably pulsed and an amount of charge is retained in a potential well under the first transfer electrode. It is shown that, within limits defined by the operating potentials of the device, the sizes of the generated charge packets are linearly dependent on the voltage difference between the first ... View full abstract»

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  • On the signal dependence of avalanche noise generation

    Publication Year: 1975, Page(s):309 - 313
    Cited by:  Papers (6)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (584 KB)

    The influence of ionization in the drift space of an IMPATT diode on the noise generation in the avalanche process is studied. It is found that carrier generation by ionization in the drift space increases the current minima between the current pulses as generated in the avalanche region. The build-up of new avalanche current pulses therefore starts from a higher current level and consequently the... View full abstract»

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  • Deep-channel MOS transistor

    Publication Year: 1975, Page(s):314 - 319
    Cited by:  Papers (4)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (624 KB)

    A new type of ion-implanted MOS transistor is described. The transistor functions, for example, as an integrating nondestructively readable photosensor and its technology is fully compatible with the advanced MOS integrated circuits. View full abstract»

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  • Limitations of the CV technique for ion-implanted profiles

    Publication Year: 1975, Page(s):319 - 329
    Cited by:  Papers (17)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (1064 KB)

    The CV profiling technique is reviewed and its validity and limitations are investigated, with special attention given to the case where the method is extended to the study of ion-implanted impurity distributions. A theoretical analysis is described which yields information about the dependence of CV measurements on impurity profile. The inverse problem is then considered and the results demonstra... View full abstract»

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  • Computer solution of one-dimensional Poisson's equation

    Publication Year: 1975, Page(s):329 - 333
    Cited by:  Papers (21)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (440 KB)

    The one-dimensional Poisson's equation for semiconductors doped with an ion-implanted profile (or any profile) is solved numerically using the mesh method of solution. The original equation is replaced by a set of finite difference equations. Solutions using a uniform mesh distribution together with the Störmer or the Cowell method are described. A variable mesh formulation of both the St... View full abstract»

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  • Bipolar transistor modeling of avalanche generation for computer circuit simulation

    Publication Year: 1975, Page(s):334 - 338
    Cited by:  Papers (48)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (472 KB)

    An avalanche generation model is developed and incorporated into computer circuit analysis programs SLIC and NICAP. A modified form of Miller's empirical expression for generation is found to agree well with measured data for Western Electric and commercial n-p-n transistors. Measurement techniques and parameter determination for the three model coefficients are discussed. Equation constraints app... View full abstract»

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  • Two-dimensional computer simulation for switching a bipolar transistor out of saturation

    Publication Year: 1975, Page(s):339 - 347
    Cited by:  Papers (24)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (1120 KB)

    A two-dimensional numerical analysis for the turnoff of a bipolar transistor from high injection level (VBE= 900 mV) is carried out. VBCis being kept constant at 1 V. Distributions of potential, electron, and hole density are interpreted and lead to a subdivision of the total transient time into four time regions, each governed by a single phenomenon. These phenomena are 1) f... View full abstract»

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  • Gamma radiation effects on integrated injection logic cells

    Publication Year: 1975, Page(s):348 - 351
    Cited by:  Papers (5)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (416 KB)

    Integrated injection-logic (I2L) cells were tested to determine their characteristics after exposure to a total dose gamma-radiation environment. These particular devices were not designed or fabricated with radiation hardness as a goal. The common-base current gain of the lateral p-n-p transistor, the common-emitter current gain of the vertical n-p-n transistor and the forward current-... View full abstract»

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  • The short-channel IGFET

    Publication Year: 1975, Page(s): 351
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (120 KB)

    Formulas are presented which show that arbitrarily short-channel length for an insulated-gate field-effect transistor does not lead to arbitrarily large transconductance. Instead, the Boltzmann limit is indicated. View full abstract»

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  • Second breakdown of IC structured power transistors

    Publication Year: 1975, Page(s):352 - 353
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (264 KB)

    The authors attempt to characterize second breakdown as heating phenomena which can occur in one of two places, either at the p-n interface at low current or at the n-n+interface at higher current. The transition point between these two states occurs at a current It= qVsatNDS where the n-region field is uniform and at a voltage Vt= ε... View full abstract»

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  • Fabrication and Characterization of Germanium ion-implanted IGFET's

    Publication Year: 1975, Page(s):353 - 355
    Cited by:  Papers (5)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (528 KB)

    Fabrication of ion-implanted germanium IGFET's is described. The characteristics of the devices are reported and the measured channel mobilities are related to annealing procedures for reducing interface state density. Charged oxide traps and interface states near the band edges scatter minority carriers in the channel and thus are responsible for reduction of the channel mobility. View full abstract»

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  • Functional operations of a high-resistivity n-GaAs diode by trap-controlled domain movement

    Publication Year: 1975, Page(s):355 - 357
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (440 KB)

    Since a traveling high-field domain in a high-resistivity n-GaAs diode is composed of charges by trapped carriers, it does not easily disappear even after the external conditions to generate it are removed. By using this property of the domain, the diode is operated as a memory device. View full abstract»

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  • Frequency limits of GaAs and InP field-effect transistors

    Publication Year: 1975, Page(s):357 - 358
    Cited by:  Papers (14)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (272 KB)

    Monte Carlo calculations of electron transport in InP and GaAs short-channel field-effect transisters (FET's) show that a significant departure from the equilibrium velocity-field curve occurs in these devices. On the basis of these calculations, InP FET's should have high-frequency performance superior to that of GaAs FET's only for effective channel lengths in excess of 1.5 µ. View full abstract»

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  • Submicrometer self-aligned dual-gate GaAs FET

    Publication Year: 1975, Page(s):358 - 360
    Cited by:  Papers (6)  |  Patents (3)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (504 KB)

    Experimental results show that it is possible to fabricate dual-gate GaAs FET's, with Lg1= 0.6 µm and Lg2= 1.3 µm, using conventional photoprocessing equipment, masks, and alignment tolerances. The initial source mesa establishes both the source and drain edges during the ohmic contact metal deposition. These two edges establish the lengths and positions of the two ... View full abstract»

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  • An EBS (electron bombarded semiconductor) high-current pulse amplifier

    Publication Year: 1975, Page(s):361 - 363
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    An EBS (electron bombarded semiconductor) pulse amplifier which generates high-current fast-risetime variable-width pulses into low impedance loads is described. Current pulses of 100 A into a 1-Ω load have been obtained with a risetime of 2.2 ns. A di/dt of 40 000 A/µs and a dV/dt of 71 000 V/µs have been obtained. Pulse lengths to 1 µs at 0.1-percent duty have been achieved. ... View full abstract»

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  • Optimum transit angles of millimeter-wave Si IMPATT diodes

    Publication Year: 1975, Page(s):363 - 365
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (376 KB)

    Optimum transit angles for maximum output power in the millimeter-wave IMPATT diodes are calculated analytically by considering the carrier diffusion process through the space-charge region. It is found that the optimum transit angle decreases, as the space-charge layer width reduces. The theoretical results show satisfactory agreement with the previously published experimental results for Si p View full abstract»

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  • Observation of the Boltzmann limit for an IGFET

    Publication Year: 1975, Page(s): 365
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (152 KB)

    Experimental evidence is presented which shows that IGFET transconductance/current ratios can approach bipolar values. View full abstract»

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  • [Back cover]

    Publication Year: 1975, Page(s): c4
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    Freely Available from IEEE

Aims & Scope

IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects.

 

Full Aims & Scope

Meet Our Editors

Editor-in-Chief

Giovanni Ghione
Politecnico di Torino,
10129 Torino, Italy

Phone +39 011 090 4064
email giovanni.ghione@polito.it