IEEE Transactions on Electron Devices

Issue 5 • May 1975

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Displaying Results 1 - 17 of 17
  • [Front cover and table of contents]

    Publication Year: 1975, Page(s): c1
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    Freely Available from IEEE
  • Noise measurements in charge-coupled devices

    Publication Year: 1975, Page(s):209 - 218
    Cited by:  Papers (20)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1136 KB)

    Measurements of the noise levels at the output of surface and bulk channel charge-coupled devices with three-phase overlapping polysilicon electrodes are presented. Pulser noise, correlated transfer noise, shot noise, dark current noise, and electrical insertion noise at the input have been measured and studied. The dependences of the electrical insertion noise and the transfer noise on charge pac... View full abstract»

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  • Sintered ohmic contacts to n-and p-type GaAs

    Publication Year: 1975, Page(s):218 - 224
    Cited by:  Papers (7)  |  Patents (4)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (816 KB)

    Previously, all known ohmic contacts to n-GaAs have involved a so-called "alloying" procedure which consists of melting a Au-Ge eutectic or Sn-based alloy films on GaAs. We describe here a new contact metallization scheme consisting of Pd/Ge/n-GaAs which requires sintering rather than melting in order to produce ohmic contacts. The sintering is done at temperatures ranging from 350°C, 15 min ... View full abstract»

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  • High light-level blooming in the silicon vidicon

    Publication Year: 1975, Page(s):224 - 234
    Cited by:  Patents (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1200 KB)

    Blooming occurs in silicon-vidicon targets because more hole-electron pairs are created at a given point by the incident light signal than can be removed by the action of the scanning electron beam. The excess carriers move laterally in the target through diffusion and, as a result, the blooming has the following properties- 1) the Slope of the blooming curve on semilog paper does not depend on th... View full abstract»

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  • A parallel self-shift technique for plasma display/memory panels

    Publication Year: 1975, Page(s):235 - 239
    Cited by:  Papers (8)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (616 KB)

    A technique for internally shifting information stored in a plasma-display/memory panel uses a discharge-related coupling phenomenon between neighboring elements together with a three-phase electronic drive scheme. Experimental results are reported which describe quantitatively the inter-element coupling phenomenon in some commercially available panels. An electronic drive scheme which uses this p... View full abstract»

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  • The influence of boundary conditions and the bias on amplification from negative differential mobility elements

    Publication Year: 1975, Page(s):240 - 247
    Cited by:  Papers (4)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (792 KB)

    We demonstrate from a study of the small signal impedance properties of supercritical negative differential mobility (NDM) element that the various modes of device amplification are determined primarily by cathode conditions and the bias. These conclusions are drawn from 1) a detailed analytical investigation where cathode conditions are represented by prespecified values of electric field, and 2)... View full abstract»

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  • An economical color-television camera utilizing a silicon vidicon for electronic color separation

    Publication Year: 1975, Page(s):248 - 254
    Cited by:  Patents (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (824 KB)

    A new image device designed to electronically separate two kinds of color components from an optical image utilizing photoelectric properties of the surface of a silicon-vidicon target, and an economical color-TV camera using this device are proposed. This system requires neither special construction of a camera tube target to obtain index signals for color separation nor bias lighting. Crosstalk ... View full abstract»

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  • Effect of silicon-gate resistance on the frequency response of MOS transistors

    Publication Year: 1975, Page(s):255 - 264
    Cited by:  Papers (22)  |  Patents (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (704 KB)

    A polycrystalline silicon gate has finite sheet resistivity, typically in the range of tens of ohms per square. The resulting gate resistance and the gate capacitance form a distributed RC network. The gate voltages appearing along this distributed network, hence, the summation drain current, is delayed from the input voltage applied to the contact pad(s). The delay of the distributed RC network i... View full abstract»

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  • Series resistance effects in semiconductor CV profiling

    Publication Year: 1975, Page(s):265 - 272
    Cited by:  Papers (14)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (816 KB)

    The effects of series resistance on semiconductor doping profiles obtained by conventional CV analysis are discussed, and it is shown that this resistance can cause extremely large errors in the profiles. It is demonstrated that the existence of such errors can be inferred from suitable RF phase angle measurements obtained during the CV profiling process, and that this information can be used to c... View full abstract»

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  • Field distribution in junction field-effect transistors at large drain voltages

    Publication Year: 1975, Page(s):273 - 281
    Cited by:  Papers (24)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (952 KB)

    An analytical approximation to the field distribution in the channel portion between gate and drain of the junction field-effect transistor is derived, assuming an infinitely small channel width-to-height ratio, and modified for finite channel widths by introducing an effective impurity concentration which depends on drain current. The approximation is applicable also in the limiting case of zero ... View full abstract»

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  • Theory of the MOS transistor in weak inversion-new method to determine the number of surface states

    Publication Year: 1975, Page(s):282 - 288
    Cited by:  Papers (138)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (608 KB)

    The drain current IDversus gate voltage VGof an MOST operating in weak inversion, and the influence of surface potential fluctuations on this characteristic have been studied before [1], [2]. The purpose of this paper is to derive an expression of the drain current IDversus the drain voltage VDfor devices with a channel length not smaller than 20 µm... View full abstract»

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  • Charge-coupled structures with self-aligned submicron gaps

    Publication Year: 1975, Page(s):289 - 293
    Cited by:  Papers (4)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (752 KB)

    A technique for fabricating charge-coupled devices with submicron gaps is described. The method relies on a "shadowing" effect produced by oblique deposition of the metal in an otherwise standard vacuum evaporation process. The biggest advantage of the technique is its extreme simplicity, particularly for one-dimensional CCD structures. The feasibility of the technique has been demonstrated for tw... View full abstract»

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  • Comments on "Measurements and interpretation of low frequency noise in FET's

    Publication Year: 1975, Page(s):293 - 294
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (242 KB)

    It is shown that, according to the theories of 1/f noise in MOST's by Klaassen [1] and Berz [2], the mean-square equivalent noise voltage at the gate Vgn2is proportional to the effective surface state density Nss, and not to NssVg(Vg= gate voltage), as was stated for these theories by Das and Moore. Therefore, contrary to what was c... View full abstract»

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  • Calculation of p-type GaAs IMPATT admittance

    Publication Year: 1975, Page(s):294 - 295
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (248 KB)

    The unequal ionization rates reported for holes and electrons in GaAs have been used to calculate the small-signal admittance for a complimentary p-type IMPATT diode. For the uniformly doped n and p device structures considered, the p-type structure is found to have significantly increased negative conductance. View full abstract»

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  • Monolithic clockless-A/D-converter integrated circuits

    Publication Year: 1975, Page(s):295 - 297
    Cited by:  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (400 KB)

    New circuit arrays and systems of MOS-type monolithic clockless-A/D-converter integrated circuit have been proposed. A fabricated 5-bit monolithic clockless-A/D converter was composed of the self-scanning part associated with the continuously variable threshold voltage device (CVTD), the logic circuit part associated with the AND-GATE circuit and inverter circuit and the decoder part. The minimum ... View full abstract»

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  • The relationship of frequency of operation to large-signal noise degradation in IMPATT diodes

    Publication Year: 1975, Page(s):297 - 299
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (480 KB)

    A singly tuned X-band IMPATT amplifier is simulated on a hybrid computer and results are given for the amount of conduction current modulation present in the device as a function of the period, T, with the ac voltage across the diode held fixed, Using Sjolund's large-signal noise theory which relates the conduction current modulation to the noise measure, M, curves are presented showing a logarith... View full abstract»

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  • [Back cover]

    Publication Year: 1975, Page(s): c4
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    Freely Available from IEEE

Aims & Scope

IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects.

 

Full Aims & Scope

Meet Our Editors

Editor-in-Chief

Giovanni Ghione
Politecnico di Torino,
10129 Torino, Italy

Phone +39 011 090 4064
email giovanni.ghione@polito.it