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IEEE Transactions on Electron Devices

Issue 4 • April 1975

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Displaying Results 1 - 11 of 11
  • [Front cover and table of contents]

    Publication Year: 1975, Page(s): c1
    Request permission for commercial reuse | PDF file iconPDF (138 KB)
    Freely Available from IEEE
  • Thermal runaway of IMPATT diodes

    Publication Year: 1975, Page(s):165 - 168
    Cited by:  Papers (7)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (600 KB)

    A simple one-dimensional computer model of the dc-thermal behavior of a Schottky-barrier GaAs IMPATT diode has been formulated to compute the conditions for thermal runaway in IMPATT diodes of various designs. The model has been used to determine the thermal stability conditions for three designs of GaAs IMPATT's. The computations lead to several conclusions, the most important of which are the fo... View full abstract»

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  • Charge-transfer readout and white-video-defect suppression in X-Y image sensors

    Publication Year: 1975, Page(s):168 - 173
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (664 KB)

    A method of detecting photosignals in solid-state image sensors is described. The technique employes bucket-brigade charge-transfer readout of a modified X-Y imaging array. This concept is further developed to cover its use in a single-pellet tricolor image sensor. A natural extension of this same bucket-brigade fan-in circuit leads to a method of mitigating the effects of white video defects in b... View full abstract»

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  • The interruption of vacuum arcs at high DC voltages

    Publication Year: 1975, Page(s):173 - 180
    Cited by:  Papers (14)  |  Patents (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1000 KB)

    In 1967, it was observed by the authors that an axial magnetic field applied to a vacuum-arc discharge in a coaxial diode was capable of extinguishing the discharge. A continuing effort to develop a high-voltage dc arc interrupter has resulted in a simple, lightweight device capable of interrupting 800 A at 25 kV. Operation at higher levels was limited, not by the interrupter, but by the lack of a... View full abstract»

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  • Charge-storage junction field-effect transistor

    Publication Year: 1975, Page(s):181 - 185
    Cited by:  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (536 KB)

    A charge-storage junction FET (CSJFET) has been developed which is capable of storing a charge in its gate region. The storage time can be varied in the orders of several seconds to less than one microsecond by illumination or by hole injection. This function is given by the double-layered structure of the gate region. The stored negative space charge in the floating gate region controls the chann... View full abstract»

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  • Field-effect transistor versus analog transistor (static induction transistor)

    Publication Year: 1975, Page(s):185 - 197
    Cited by:  Papers (328)  |  Patents (53)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1267 KB)

    The reason why the usual FET shows the saturated characteristics has been shown that with increasing drain voltage, the effect of the negative feedback action, increases through a marked increase of the Series channel resistance in the neighborhood of the pinch-off voltage, under which condition the apparent transfercon-ductanceG_{m'}= G_{m}/(1 + r_{s}.G_{m})becomesG_{m'} simeq r_{... View full abstract»

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  • A new concept for microstrip-integrated GaAs Schottky-diodes

    Publication Year: 1975, Page(s):198 - 200
    Cited by:  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (416 KB)

    A new concept for integrated planar Schottky-diodes has been developed. It meets the two important requirements in the design of microwave diodes: high cutoff frequency and low parasitics. Only one epitaxial layer is needed. The Schottky contact is deposited on the slope of a mesa in order to obtain both low series resistance and low capacitance, Up to now, a Zero-bias cutoff frequency of 150 GHz ... View full abstract»

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  • 10-W and 12-W GaAs IMPATT's

    Publication Year: 1975, Page(s): 200
    Cited by:  Papers (10)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (144 KB)

    Hi-lo and lo-hi-lo GaAs Schottky-barrier IMPATT diodes have generated CW power outputs over 12 and 10 W, respectively, at 6 GHz. Noise measurements indicate a decreasing FM noise measure with increasing power output. The diodes are less susceptible to tuning-induced burnout than are flat-profile GaAs Impatts, having repeatedly survived input power surges over 70 W. View full abstract»

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  • Comment on low-energy electron-beam energy deposition

    Publication Year: 1975, Page(s):201 - 202
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (267 KB)

    A quantitative knowledge of the energy deposited by low-energy electron beams is often necessary for microelectronic applications. Three calculations of energy deposition in a metal-oxide-semiconductor (MOS) structure irradiated by a beam of 20- keV electrons are compared in this note. The error resulting from equating electron penetration to path length is illustrated. View full abstract»

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  • Charge-density limitation in electrofluid dynamic power generation

    Publication Year: 1975, Page(s):202 - 204
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (456 KB)

    The effects of the presence of shielding electrodes on the electric fields in electrofluid dynamic (EFD) generator channels are studied. For each case studied, the magnitude of the field distortion is found as the ratio of the maximum electric field to the undisturbed maximum field. The electric-field magnification is derived as a function of both the relative size and sharpness of the protruding ... View full abstract»

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  • [Back cover]

    Publication Year: 1975, Page(s): c4
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    Freely Available from IEEE

Aims & Scope

IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects.

 

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Giovanni Ghione
Politecnico di Torino,
10129 Torino, Italy

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