Notice
There is currently an issue with the citation download feature. Learn more

IEEE Transactions on Electron Devices

Issue 3 • March 1975

Filter Results

Displaying Results 1 - 14 of 14
  • [Front cover and table of contents]

    Publication Year: 1975, Page(s): c1
    Request permission for commercial reuse | PDF file iconPDF (151 KB)
    Freely Available from IEEE
  • Potentials and fields in buried-channel CCD's: A two-dimensional analysis and design study

    Publication Year: 1975, Page(s):77 - 90
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1400 KB)

    It is shown that the two-dimensional potential variation in buried-channel CCD's can be considered to arise from a number of linearly contributing components. The components arising from the lateral variation in the gate voltage, depletion charge, and signal charge are clearly identified. Both the one- and two-level insulator structures are considered, and it is shown that the two-level structure ... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Exact modeling of the transient response of an MOS capacitor

    Publication Year: 1975, Page(s):90 - 101
    Cited by:  Papers (10)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1128 KB)

    The dynamic properties of a metal-oxide-semiconductor capacitor are simulated using numerical techniques. Time-dependent behavior of the electrons and holes is obtained for large-signal transient applications in the presence of deep-lying Shockley-Read-Hall (SRH) recombination centers. The computation is performed throughout the entire device including both the insulator and semiconductor material... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Thin-film distributed RC parameter strain gauges

    Publication Year: 1975, Page(s):102 - 108
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (704 KB)

    Thin-film cermet resistance strain gauges provide gauge factors of the order of 15, while providing higher stability than achievable with discontinuous thin-film metallic strain gauges. Strain-sensitive cermet resistors can be incorporated advantageously into thin-film distributed parameter notch filters. This results in a highly sensitive strain-sensing device which can be fabricated by a simple ... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • The influence of doping inhomogeneities on the reverse characteristics of semiconductor power devices

    Publication Year: 1975, Page(s):108 - 114
    Cited by:  Papers (5)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (688 KB)

    Failure of the reverse characteristic of power devices may be caused by an increase of field strength due to doping inhomogeneities. A numerical program has been developed to calculate the effect of various types of perturbations on the maximum occurring field strength and on the shape of the space charge region. Three-dimensional calculations show that the influence of inhomogeneities can partly ... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • An initial growth of a small-signal two-dimensional domain in a bulk effect device

    Publication Year: 1975, Page(s):115 - 119
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (512 KB)

    This paper presents a small-signal theory of a two-dimensional domain initiation in a bulk effect device, and discussions are focused on a transverse extension of the initial domain. It is introduced that the transverse extension velocity is not so fast as compared with the longitudinal propagation velocity in a stage of the domain initiation. This is because the longitudinal propagation velocity ... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Two-dimensional domain dynamics in a planar Schottky-gate Gunn-effect device

    Publication Year: 1975, Page(s):120 - 126
    Cited by:  Papers (4)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (744 KB)

    A two-dimensional computer-aided analysis on the domain dynamics in a planar Gunn device with a Schottky-barrier gate has been performed both for the repeatedly nucleated-domain mode (continuous operation) and for the triggered single-domain mode (triggered operation). The difference in the domain behavior between planar devices with coplanar ohmic electrodes and with parallel ohmic electrodes lea... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • An experimental study of the influence of boundary conditions on the Gunn effect

    Publication Year: 1975, Page(s):127 - 139
    Cited by:  Papers (5)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1539 KB)

    The electrical characteristics of long inhomogeneous bulk negative differential mobility (NDM) semiconductor elements (n-GaAs and n-InP) exhibiting various modes of current instabilities at low microwave frequencies have been experimentally observed. Measurements were made of the time-dependent sample current and voltage and of the prethreshold electric-field distribution within the sample. The me... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Device physics of a new TRAPATT oscillator

    Publication Year: 1975, Page(s):140 - 145
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (728 KB)

    A new circuit for TRAPATT operation of avalanche diodes has been fabricated and tested. Operation of diodes in the circuit has also been studied via computer simulation. Results are given in this paper and discussion is given on the internal dynamics of the field shock-front formation, based on the computer simulation. The major features of the new TRAPATT oscillator are 1) that TRAPATT oscillatio... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Device physics of integrated injection logic

    Publication Year: 1975, Page(s):145 - 152
    Cited by:  Papers (86)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (827 KB)

    After a brief review of relevant device parameters, characterizing the inversely operating multicollector n-p-n transistor and the lateral p-n-p transistor which make up anI^{2}Lbasic cell, some electronic circuit properties of this gate are discussed quantitively. Analytic expressions are derived for the transfer characteristics, the noise margin and the propagation delay time per gate... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Transfer inefficiency effects in parallel-transfer charge-coupled linear imaging devices

    Publication Year: 1975, Page(s):152 - 154
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (376 KB)

    This correspondence discusses the effects of transfer inefficiency on MTF (modulation transfer function) for single register readout and parallel-transfer readout of charge-coupled linear imaging devices. An analytical expression for transfer inefficiency effects on MTF for parallel-transfer arrays is derived. This expression is compared with the result for single register readout; and tile advant... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • On the decay of small amounts of signal charge in surface-channel CCD's

    Publication Year: 1975, Page(s):154 - 156
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (336 KB)

    By solving the continuity equation with the assumption that the signal charge is small, an expression is obtained for the decay of charge in a three-phase CCD having a short gate length. The results help clarify some previous results on this topic. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Degradation of the power- and frequency-temperature performance of IMPATT diodes at lower frequencies

    Publication Year: 1975, Page(s):156 - 158
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (297 KB)

    Investigations of the effect of ambient temperature on the RF power and frequency ofX-band p+-n-n+ Si IMPATT diodes at frequencies and temperatures below their optimum conditions show considerable degradation of performance. A simple model is presented to explain these effects in terms of a lower limit to the instantaneous terminal voltage of the diode. Values of diode negative conducta... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • [Back cover]

    Publication Year: 1975, Page(s): c4
    Request permission for commercial reuse | PDF file iconPDF (798 KB)
    Freely Available from IEEE

Aims & Scope

IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects.

 

Full Aims & Scope

Meet Our Editors

Editor-in-Chief

Giovanni Ghione
Politecnico di Torino,
10129 Torino, Italy

Phone +39 011 090 4064
email giovanni.ghione@polito.it