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Electron Devices, IEEE Transactions on

Issue 9 • Date Sept. 1974

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Displaying Results 1 - 12 of 12
  • [Front cover and table of contents]

    Publication Year: 1974 , Page(s): c1
    Save to Project icon | Request Permissions | PDF file iconPDF (138 KB)  
    Freely Available from IEEE
  • Noise characteristics of gallium arsenide field-effect transistors

    Publication Year: 1974 , Page(s): 549 - 562
    Cited by:  Papers (83)  |  Patents (2)
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (1472 KB)  

    Small signal and noise characteristics for GaAs field-effect transistors are derived with the saturated drift velocity of the carriers underneath the gate taken into account. The noise contributed by the saturated carriers is nonnegligible and in most cases, exceeds the noise generated by the unsaturated region. Parasitic elements contribute importantly by preventing the full cancellation of the c... View full abstract»

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  • Electronic tuning of stable transferred electron oscillators

    Publication Year: 1974 , Page(s): 563 - 570
    Cited by:  Papers (5)
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (696 KB)  

    The problem of electronic tuning of microwave osciilator structures characterized by high energy storage and hence low noise is considered. The evolution of a wide-band varactor tuned J-band oscillator is described, and analytical criteria are presented which determine the position of the varactor diode and the theoretical maximum tuning range available including Varactor loss. Experimental result... View full abstract»

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  • Noise performance of the new Norton op amps

    Publication Year: 1974 , Page(s): 571 - 577
    Cited by:  Papers (3)
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (520 KB)  

    The noise performance of the new "Norton" single-ended operational amplifier is described in detail. The important noise sources are introduced theoretically, and it is shown that the absolute noise levels can be accurately predicted and simply modeled under any bias conditions. The results are verified experimentally, and an example of a bandpass active filter is used to illustrate the accuracy o... View full abstract»

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  • Negative resistance induced by avalanche injection in bulk semiconductors

    Publication Year: 1974 , Page(s): 578 - 586
    Cited by:  Papers (12)
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (904 KB)  

    The negative resistance induced by space-charge effects in bulk semiconductor devices subjected to avalanche multiplication has been studied to clarify the physics of this phenomenon and the validity of the assumptions made by other authors. On the basis of the numerical results, an analytical model is proposed, using the regional approximation to evaluate the field along the device and the J-V ch... View full abstract»

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  • A two-dimensional model for the lateral p—n—p transistor

    Publication Year: 1974 , Page(s): 587 - 592
    Cited by:  Papers (12)
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (600 KB)  

    A two-dimensional solution of the continuity equation in the base of the lateral p-n-p transistor, including interactions with the substrate and subdiffused layer, is presented for dc excitation. This method is extended to the case of steady-state sinusoidal excitation. Computed and measured results are presented for the frequency dependence of the Short-circuit small-signal current transfer ratio... View full abstract»

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  • A new gas discharge device for electrostatic printing

    Publication Year: 1974 , Page(s): 593 - 597
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (616 KB)  

    A new gas discharge device for electrostatic printing is described, which is flat in shape, simple in structure, and has inherent scanning capability. As a glow discharge is sequentially transferred in the device, voltage pulses are generated from the discharge spaces and fed to recording styluses one after another. These voltage pulses are applied to the dielectric coating of the electrostatic re... View full abstract»

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  • Electron fly's eye lens artwork camera

    Publication Year: 1974 , Page(s): 598 - 603
    Cited by:  Papers (3)  |  Patents (2)
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (1376 KB)  

    The design of an electron beam artwork camera that records integrated-circuit patterns directly from computer circuit, design programs is discussed. The system produces artwork patterns covering a 1- by 1-in area with line edge definition of 0.5 µm and with capability for producing patterns at 3, 5, or 10 times scale. The electron beam pattern-recording is achieved through the use of a novel ... View full abstract»

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  • Voltage-controlled DNR in unijunction transistor structure

    Publication Year: 1974 , Page(s): 604 - 605
    Cited by:  Papers (4)
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (320 KB)  

    Modified structure of a conventional diffused planar unijunction transistor (UJT) having a feasible voltage-controlled differential negative resistance (DNR) characteristic is developed using high-resistivity n-type silicon. The origin of a voltage-controlled DNR is qualitatively explained. A quantitative analysis is given and a comparison with experimental results is made. View full abstract»

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  • The SNS Josephson junction with a third terminal

    Publication Year: 1974 , Page(s): 605 - 606
    Cited by:  Papers (1)
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (304 KB)  

    It is shown that a current introduced directly into the N layer of an SNS Josephson junction whose width is much greater than ξNenters the two superconductors dividing in the ratio of the resistances encountered. The device acts as a two-terminal device with an auxiliary current divider. View full abstract»

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  • MOSFET thresholds at 4.2 K induced by cooling bias

    Publication Year: 1974 , Page(s): 606 - 607
    Cited by:  Papers (2)
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (384 KB)  

    The threshold voltage of a MOSFET at 4.2 K is affected by the particular bias condition present while the device is being cooled. Measurements disagree with a simple model based upon stored bulk-charge. View full abstract»

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  • [Back cover]

    Publication Year: 1974 , Page(s): c4
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    Freely Available from IEEE

Aims & Scope

IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects.

 

Full Aims & Scope

Meet Our Editors

Acting Editor-in-Chief

Dr. Paul K.-L. Yu

Dept. ECE
University of California San Diego