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IEEE Transactions on Electron Devices

Issue 7 • July 1974

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Displaying Results 1 - 12 of 12
  • [Front cover and table of contents]

    Publication Year: 1974, Page(s): c1
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    Freely Available from IEEE
  • A quantitative study of emitter ballasting

    Publication Year: 1974, Page(s):385 - 391
    Cited by:  Papers (40)  |  Patents (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (640 KB)

    A theoretical and experimental study is carried out to quantitatively analyze the effect of emitter ballasting on thermal instabilities in high power density transistors. The analysis includes factors such as thermal resistance, emitter and base resistances, collector dissipation, etc., affecting thermal runaway. In particular, numerical computations are presented to describe current-voltage chara... View full abstract»

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  • Solid-state frequency indicator

    Publication Year: 1974, Page(s):391 - 396
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (528 KB)

    A new solid-state frequency indicator composed of a piezoelectric element and a liquid-crystal coating is fabricated, and first-order theoretical predictions are verified experimentally. The signal voltage is applied across the thickness of the piezoelectric element which is tapered in width along its length. As frequency is varied, the temperature rises locally near the region where the width is ... View full abstract»

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  • Measurement of the mobility and concentration of carriers in diffused zones in Si with a gate controlled structure

    Publication Year: 1974, Page(s):397 - 402
    Cited by:  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (640 KB)

    A gate controlled structure is described. It is shown to be a convenient device for measuring mobility and concentration profile of majority carriers in diffused zones. The values of these two parameters are derived from measurements of gate capacitance and resistivity as a function of gate voltage. Various ways of obtaining C-V deep-depletion curves are discussed in order to justify the choice of... View full abstract»

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  • High injection in a two-dimensional transistor

    Publication Year: 1974, Page(s):403 - 409
    Cited by:  Papers (28)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (816 KB)

    A generally accepted theory for bipolar transistors operated at high current densities has not yet been established. Controversy exists as to whether high current Performance is affected primarily by vertical or lateral phenomena. This paper solves the high injection problem by means of a two-dimensional numerical algorithm. The results of some calculations pertaining to a particular example show ... View full abstract»

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  • Lateral diffusion of zinc and tin in gallium arsenide

    Publication Year: 1974, Page(s):410 - 415
    Cited by:  Papers (6)  |  Patents (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (656 KB)

    The lateral diffusion of zinc and tin in GaAs, during their diffusion through windows in phosphosilicate glass (PSG) masks, has been measured as a function of oxide composition and oxide thickness. Lateral diffusion of zinc extends up to 20 times the junction depth, whereas the lateral diffusion of tin extends up to 500 times the junction depth, interfacial stress between mask and substrate has be... View full abstract»

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  • Description of a technique for the reduction of thyristor turn-off time

    Publication Year: 1974, Page(s):416 - 420
    Cited by:  Papers (1)  |  Patents (5)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (600 KB)

    A thyristor structure is provided with an anode-gate electrode which is used to speed up the device recovery and reduce its turn-off time. The turn-off process of the anode-gate thyristor is analyzed qualitatively using the charge control approach. Experimental device structures are described and the results of measurements are reported. View full abstract»

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  • The InSb on a piezoelectric Rayleigh wave amplifier

    Publication Year: 1974, Page(s):421 - 427
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (888 KB)

    Results taken from monolithic acoustic surface-wave amplifiers which employ the interaction between carriers drifting in a semiconductor film and electric fields accompanying a Rayleigh wave propagating on a piezoelectric substrate are described. The experimental devices were fabricated in vacuum by flash evaporation of a InSb compound onto heated substrates of LiNbO3or Bi12G... View full abstract»

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  • The second breakdown in reverse biased transistor as an electrothermal switching

    Publication Year: 1974, Page(s):428 - 436
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (912 KB)

    A thorough investigation has been given to second breakdown (SB) behaviors in transistors under reverse biased-base condition, and three types of behaviors have been shown: normal (without SB), and partial SB, as well as complete SB, which appear after very short delay times. The last two behaviors are shown to involve an electrothermal switching mechanism which operates at emitter collector volta... View full abstract»

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  • One-dimensional study of buried-channel charge-coupled devices

    Publication Year: 1974, Page(s):437 - 447
    Cited by:  Papers (10)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1056 KB)

    An analysis leading to some basic relations is performed on a one-dimensional model of a buried-channel charge-coupled device (CCD). Expressions for the charge distribution, potential, channel thickness, and location are obtained. These enable the effects of varying the device structural parameters, as well as the gate voltage and signal charge, to be examined very simply. The maximum charge-carry... View full abstract»

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  • A new Λ-type negative resistance device of integrated complementary FET structure

    Publication Year: 1974, Page(s):448 - 449
    Cited by:  Papers (13)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (224 KB)

    A new type of negative resistance diode having a Λ-type I-V characteristic is presented. The device is constructed by a functional integration of two complementary FET's of an n- and p-channel depletion mode. The operational principle together with some experimental results are described. View full abstract»

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  • [Back cover]

    Publication Year: 1974, Page(s): c4
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    Freely Available from IEEE

Aims & Scope

IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects.

 

Full Aims & Scope

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Giovanni Ghione
Politecnico di Torino,
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