IEEE Transactions on Electron Devices

Issue 6 • June 1974

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Displaying Results 1 - 14 of 14
  • [Front cover and table of contents]

    Publication Year: 1974, Page(s): c1
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    Freely Available from IEEE
  • GaAs Schottky—Read diodes for x-band operation

    Publication Year: 1974, Page(s):317 - 323
    Cited by:  Papers (12)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (848 KB)

    High-efficiency performance of GaAs Schottky-Read IMPATT diodes has been observed at X-band frequencies. The highest efficiency measured was 26.1 percent with 2.5-W continuous-wave (CW) output power at 8.8 GHz for a single-mesa diode while multiple-mesa diodes have delivered more than 7 W at X band. The diodes were fabricated from multiple-layer epitaxial material with gold-plated heat sinks. Deta... View full abstract»

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  • Ion implantation for threshold control in COSMOS circuits

    Publication Year: 1974, Page(s):324 - 331
    Cited by:  Papers (34)  |  Patents (6)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (768 KB)

    The use of ion implantation for close threshold control of N-MOS and P-MOS transistors has been studied from an experimental and theoretical viewpoint. Experimental determinations of ion-implanted diffusion profiles, sheet resistivities, and threshold voltages for boron, phosphorus, and arsenic implantations are reported for doses in the range from 1 × 1011to 1 × 1014 View full abstract»

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  • Measurements on a charge-coupled area image sensor with blooming suppression

    Publication Year: 1974, Page(s):331 - 341
    Cited by:  Papers (5)  |  Patents (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1408 KB)

    Blooming, the lateral spreading of charge from an intensely illuminated area of an image sensor, can be present in an especially objectionable form in charge-coupled devices. Bright lines are formed in the display, owing to a charge propagation along the transfer channels. The introduction of overflow drains, i.e., stripes of a reverse-biased p-n junction placed between the transfer channels, prov... View full abstract»

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  • Noise in IMPATT-diode oscillators at large-signal levels

    Publication Year: 1974, Page(s):342 - 351
    Cited by:  Papers (13)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1088 KB)

    A theory is formulated which describes the noise properties of IMPATT-diode oscillators operating at large-signal levels. This theory is based directly on the work of Convert [17] and Hines [18]. The theory takes into account the signal dependence of the noise generation process, and also the intermodulation effects occurring between the various frequency bands. The equations are conveniently arra... View full abstract»

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  • Vertical multijunction solar-cell one-dimensional analysis

    Publication Year: 1974, Page(s):351 - 356
    Cited by:  Papers (4)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (504 KB)

    The vertical multijunction solar cell is a photovoltaic device which may allow conversion efficiencies higher than conventional planar devices. A one-dimensional model of the device is presented here which allows a simple and straightforward analysis of device performance to be conducted. The analysis covers the derivation of device short-circuit current, saturation current, open-circuit voltage, ... View full abstract»

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  • Graphical design and iterative analysis of the DC parameters of GaAs FET's

    Publication Year: 1974, Page(s):357 - 362
    Cited by:  Papers (8)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (584 KB)

    Two-dimensional numerical solutions of Poisson's equation and the carrier continuity equation for the short-gate GaAS field-effect transistor structure have been used to predict device performance. However, a generally accepted simplified approach to FET design has not evolved. In this paper, a simplified design technique and an iterative device analysis procedure are presented for application to ... View full abstract»

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  • A precise MOSFET model for low-voltage circuits

    Publication Year: 1974, Page(s):363 - 371
    Cited by:  Papers (25)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (792 KB)

    A MOSFET model that is capable of handling the drain current above 10-10A within the temperature range of 220-340 K is proposed. The key feature of the model is that surface potentials at source and pinchoff points are used for the purpose of obtaining a smooth connection between the current solutions in the tail and the saturation regions. Comparison of the model with experiments has b... View full abstract»

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  • A picture-display panel using a constricted-glow discharge

    Publication Year: 1974, Page(s):372 - 376
    Cited by:  Papers (3)  |  Patents (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (640 KB)

    This paper describes the theory of operatien and the performance of a new dc-operated plasma display device using a constricted-glow discharge. The device consists of a transparent anode and a cathode for the gas discharge and a thin glass plate etched with a rectangular array of electroded holes, which is placed between the electrodes. A constricted-glow discharge occurs through only one hole at ... View full abstract»

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  • Resolution of fiber-optic faceplate image-intensifier tubes as a function of magnification

    Publication Year: 1974, Page(s):376 - 377
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (272 KB)

    The resolution capability of image intensifiers is customarily assumed as proportional to the magnification of the tube. An equation is presented to calculate resolution a priori as a function of magnification, applicable to tubes with fiber-optic faceplates. in addition, a method is suggested to improve the resolution capability of multistage tubes. View full abstract»

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  • The effect of dielectric surface loading on the stability of epitaxial coplanar Gunn diodes

    Publication Year: 1974, Page(s):377 - 378
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (280 KB)

    The existence of current instabilities in epitaxial coplanar Gunn diodes was observed as a function of the nd product for air and oxide surface loading. Theoretical considerations indicate that the GaAs substrate and a surface depletion layer may substantially affect the stability of coplanar devices. View full abstract»

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  • A glow discharge for uniform charging of electrophotographic layers

    Publication Year: 1974, Page(s):378 - 379
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (272 KB)

    This correspondence reports results of investigations concerning a glow discharge under normal pressure and temperature conditions. Because of its high current efficiency and its good charging uniformity, the glow discharge is well suited for electrophotographic devices (charging as well as discharging) and for contactless discharging of clear dielectric foils. View full abstract»

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  • The spectral-response characteristics of a Cu2S—CdS photovoltaic cell

    Publication Year: 1974, Page(s):379 - 382
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (504 KB)

    An analysis of the spectral response of the Cu2S-CdS photovoltaic cell is presented and for a typical cell curves illustrating the probable effect of grain size on the response are plotted. Wide variation of spectral response of such cells has been observed, and a possible explanation for such variation is suggested. View full abstract»

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  • [Back cover]

    Publication Year: 1974, Page(s): c4
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    Freely Available from IEEE

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IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects.

 

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Politecnico di Torino,
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