IEEE Transactions on Electron Devices

Issue 5 • May 1974

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Displaying Results 1 - 10 of 10
  • [Front cover and table of contents]

    Publication Year: 1974, Page(s): c1
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  • Announcement - Change in editorial board

    Publication Year: 1974, Page(s): 285
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  • An exposure model for electron-sensitive resists

    Publication Year: 1974, Page(s):286 - 299
    Cited by:  Papers (8)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1608 KB)

    We present a mathematical model for the exposure of electron-sensitive resists where an electron beam is incident normal to a substrate coated with a thin layer of resist. We include both the scattering of the incident electrons as they penetrate the resist and the electrons backscattered from within the resist and from the substrate. The calculations yield contours of equal absorbed energy densit... View full abstract»

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  • Intracell charge-transfer structures for signal processing

    Publication Year: 1974, Page(s):300 - 308
    Cited by:  Papers (12)  |  Patents (8)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1408 KB)

    An approach is presented for implementing a fully programmable transversal filter using surface charge-transfer techniques. Summation of the signals from each output tap is performed automatically by using common output electrodes, and fixed binary tap weights are Provided by selectively controlling the transfer of charge within each cell. Charge packets representing a sampled data input signal ar... View full abstract»

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  • Output capability of electron beam-semiconductor bandpass amplifiers using large-area diodes

    Publication Year: 1974, Page(s):308 - 310
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (384 KB)

    Design equations for electron beam-semiconductor (EBS) bandpass amplifiers using large-area diodes are discussed. The large-area diodes are used to enhance power output and efficiency, particularly in the case of average-power amplifiers. Both class A and class B modes are treated. View full abstract»

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  • Methods of finding the parameters of ideal current loops for computer simulation of magnetic fields

    Publication Year: 1974, Page(s):310 - 312
    Cited by:  Papers (7)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (416 KB)

    Methods are described for finding the position, radius, and strength of ideal current loops to represent the magnetic field of 1) a partially immersed convergent electron gun, 2) a short solenoid, using the Helmholtz concept extended to triplets and quadruplets, and 3) a periodic permanent magnet (P.P.M.) focusing stack for a TWT. The parameters of the coils then constitute a complete description ... View full abstract»

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  • Liquid-crystal color display by DAP-TN double-layered structure

    Publication Year: 1974, Page(s):312 - 313
    Cited by:  Patents (6)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (240 KB)

    A liquid-crystal display device is reported combining a polarizer, a deformation of aligned phases (DAP) cell, a twisted nematic (TN) cell, and an analyzer in series arrangement. The color of the transmitted light can be modulated by the application of voltage to the DAP cell. The transmission properties of the device can be switched from the DAP mode for crossed polarizers to that for parallel po... View full abstract»

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  • Breakdown behavior of rectifiers and thyristors made from striation-free silicon

    Publication Year: 1974, Page(s):313 - 314
    Cited by:  Papers (8)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (216 KB)

    Taking advantage of the nuclear reaction30Si(n,γ)31Siβ-→31P, silicon was doped with phosphorus. The resistivity was set to values between 2 and 200 Ω.cm. The measured resistivity profiles show the macroscopically homogeneous distribution of the dopant. Photographs of the breakdown radiation emitted from diodes show that the silicon i... View full abstract»

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  • Correction to "Electron trajectories in twisted electrostatic deflection yokes"

    Publication Year: 1974, Page(s): 314
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  • [Back cover]

    Publication Year: 1974, Page(s): c4
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    Freely Available from IEEE

Aims & Scope

IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects.

 

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Editor-in-Chief

Giovanni Ghione
Politecnico di Torino,
10129 Torino, Italy

Phone +39 011 090 4064
email giovanni.ghione@polito.it