IEEE Transactions on Electron Devices

Issue 4 • April 1974

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Displaying Results 1 - 8 of 8
  • [Front cover and table of contents]

    Publication Year: 1974, Page(s): c1
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  • Experiments and model of nonequilibrium behavior of MIS varactors using the linear ramp technique

    Publication Year: 1974, Page(s):241 - 247
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (752 KB)

    Whereas the majority of methods evaluating properties of the interface between silicon and silicon dioxide requires (quasi-) equilibrium conditions of the sample, pulse and linear ramp techniques consider nonequilibrium behavior. A theoretical model of nonequilibrium behavior within the semiconductor deep depletion layer, and its consequences for the formation of an inversion region is presented p... View full abstract»

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  • Measurements and interpretation of low-frequency noise in FET's

    Publication Year: 1974, Page(s):247 - 257
    Cited by:  Papers (11)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (1032 KB)

    Equivalent gate-noise voltage magnitudes of MOSFET's and JFET's have been measured by a direct method for the frequency range of 20 Hz-9 kHz. Results of a number of theoretical analyses of MOSFET flicker noise have been combined to yield a generalized expression for the drain-noise current. Experimental results showing the bias, temperature, and frequency dependence of the noise have been presente... View full abstract»

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  • Thermally induced FM noise in Gunn oscillators and jitter in Gunn-effect digital devices

    Publication Year: 1974, Page(s):258 - 265
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (656 KB)

    By considering the starting-time fluctuation of domain formation and the fluctuation of domain-formation time caused by thermal noise, the front-edge fluctuation of the output current pulse of a Gunn device is obtained. Taking the Fourier transform of the output current-pulse train with these front-edge fluctuations, we obtain the equivalent noise-current source due to the thermal noise of Gunn os... View full abstract»

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  • Final stage of the charge-transfer process in charge-coupled devices

    Publication Year: 1974, Page(s):266 - 272
    Cited by:  Papers (8)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (648 KB)

    The final stages of transfer of charge from under a storage gate is formulated analytically including both fringing-field induced drift and diffusion. Analytic solutions to these equations are presented for constant fringing fields, and a system of equations for spatially varying fields is developed. Approximate solutions for spatially varying fringing fields, when combined with a lumped-parameter... View full abstract»

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  • Fully ion-implanted bipolar transistors

    Publication Year: 1974, Page(s):273 - 278
    Cited by:  Papers (42)  |  Patents (3)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (648 KB)

    Technology for the fabrication of fully ion-implanted bipolar transistors with arsenic emitters and boron bases is described. This technology results in extremely uniform distributions of electrical parameters, e.g,, hFE= 113 with a standard deviation of 1.3 across a wafer. In addition, it can produce a wide range of doping profiles and hence, a wide range of device performance. Using v... View full abstract»

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  • Surface switching in thin films of NiO (Li)

    Publication Year: 1974, Page(s):278 - 280
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    Repetitive cyclical surface switching in thin polycrystalline films of NiO(Li) has been observed and is compared to a switching through the film. Characteristic switching parameters, such as the threshold field, turn-on and turn-off times are found to be the same in both cases. However, the lifetime of the switching devices is ∼103switching cycles longer for the surface-electrode ... View full abstract»

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  • [Back cover]

    Publication Year: 1974, Page(s): c4
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    Freely Available from IEEE

Aims & Scope

IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects.

 

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Editor-in-Chief

Giovanni Ghione
Politecnico di Torino,
10129 Torino, Italy

Phone +39 011 090 4064
email giovanni.ghione@polito.it