IEEE Transactions on Electron Devices

Issue 3 • March 1974

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Displaying Results 1 - 12 of 12
  • [Front cover and table of contents]

    Publication Year: 1974, Page(s): c1
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    Freely Available from IEEE
  • Double positive beveling: A better edge contour for high-voltage devices

    Publication Year: 1974, Page(s):181 - 184
    Cited by:  Papers (6)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (456 KB)

    A theoretical analysis is made of the field distribution near the surface of p-n-p structures with double positive edge geometry. This geometry offers in principle the possibility of avoiding the limitations and disadvantages inherent in the use of negative bevel angles. The results show that the reduction of the maximum field at the surface is not as easy as for the case of a simple positive beve... View full abstract»

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  • Space-charge effects in a CRT with post-deflection acceleration

    Publication Year: 1974, Page(s):184 - 189
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (688 KB)

    The theory which gives the space-charge contribution to the trace width in a cathode ray tube (CRT) is extended to mesh-expansion postdeflection acceleration (PDA) tubes. This is done in an approximation that neglects the space-charge repulsion in the final beam acceleration region of the CRT. Comparison with experimental results indicates that the approximation is valid. The problem leads to none... View full abstract»

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  • Electrostatic gray-scale facsimile recording

    Publication Year: 1974, Page(s):189 - 192
    Cited by:  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (976 KB)

    Gray-scale facsimile recording is achieved by using a special electrode arrangement together with the common electrostatic printing technique. The original optical density of a document is reconstructed on an electrostatic recording medium by varying size and charge density of small charged dots. Thus, the developed charged dots allow a continuous gray scale with optical densities in the limits of... View full abstract»

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  • Theoretical optimization of EBS targets

    Publication Year: 1974, Page(s):193 - 201
    Cited by:  Papers (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1320 KB)

    The analysis of the external circuit response and internal behavior of an electron-bombarded semiconductor diode (EBS target) has been extended using static and dynamic computer simulation techniques. This work complements the previous simplest case analytical treatment of target operation and makes possible the accurate evaluation of high-level target response with any or all of the following eff... View full abstract»

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  • Transient response of MOS capacitors under localized photoexcitation

    Publication Year: 1974, Page(s):202 - 209
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (832 KB)

    Lateral surface transport of charges under the gate electrode of MOS capacitors from localized photogeneration of electrons and holes are studied by observing the transient photocurrent through the MOS capacitor. The photocurrent is highly non-linear under a step function illumination. It shows a large initial spike (phase I), whose length is independent of device area, followed by a slow decay (p... View full abstract»

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  • Carrier diffusion degradation of modulation transfer function in charge coupled imagers

    Publication Year: 1974, Page(s):210 - 217
    Cited by:  Papers (59)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (816 KB)

    Expressions for the modulation transfer function due to minority carrier diffusion in charge coupled imagers are calculated, following the approach used by Crowell and Labuda. Both front and rear optical illumination of the charge coupled imager are considered; for the rear illumination case interference effects are included. The modulation transfer function for high energy electron excitation is ... View full abstract»

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  • Static temperature distribution in IC chips with isothermal heat sources

    Publication Year: 1974, Page(s):217 - 226
    Cited by:  Papers (68)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (864 KB)

    An analytical solution for the static temperature distribution on the surface of a heat-sinked integrated chip with one isothermal heat source is derived. The mathematical technique applied to solve the Laplace equation is a double Schwarz-Christoffel conformal transformation. Perturbations in the temperature distribution due to the heat source and the chip finite length are evaluated as well as t... View full abstract»

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  • Avalanche multiplication factors in Ge and Si abrupt junctions

    Publication Year: 1974, Page(s):226 - 231
    Cited by:  Papers (5)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (520 KB)

    Analytical approximations for the multiplication factors Mnand Mpin Ge and Si one-sided abrupt junctions are given. The resulting expressions account for different α and β ionization rates and are quite accurate. With further approximations on the ionization integrals, very simple expressions of 1 -- 1/M both for electron and holes in the range of very low multiplic... View full abstract»

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  • Au-polycrystalline GaP electroluminescent diodes

    Publication Year: 1974, Page(s):231 - 233
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (328 KB)

    The electroluminescent properties of Au-polycrystalline GaP barriers have been studied. IR, red, and green bands are present under avalanche regime, while at forward bias IR radiation is produced. Quantum efficiency reaches 5 × 10-5in the red band. Medium-size, low cost GaP LED can be achieved. View full abstract»

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  • Measurement of the velocity-field characteristic of indium phosphide by the microwave absorption technique

    Publication Year: 1974, Page(s):233 - 235
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (456 KB)

    The electron velocity-field characteristic has been determined for a large number of samples of InP by the microwave absorption technique. The values obtained for the electric field at the peak of the velocity-field curve are corrected for relaxation effects by comparison with a computer simulation, and the resulting values lie in the range 7.2-9.8 kV/cm-1. The corrected negative dynami... View full abstract»

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  • [Back cover]

    Publication Year: 1974, Page(s): c4
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    Freely Available from IEEE

Aims & Scope

IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects.

 

Full Aims & Scope

Meet Our Editors

Editor-in-Chief

Giovanni Ghione
Politecnico di Torino,
10129 Torino, Italy

Phone +39 011 090 4064
email giovanni.ghione@polito.it