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IEEE Transactions on Electron Devices

Issue 2 • Feb. 1974

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Displaying Results 1 - 11 of 11
  • [Front cover and table of contents]

    Publication Year: 1974, Page(s): c1
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    Freely Available from IEEE
  • A comparison between N+-P-P+and P+-N-N+silicon IMPATT diodes

    Publication Year: 1974, Page(s):137 - 141
    Cited by:  Papers (5)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (400 KB)

    A one-dimensional large-signal computer program that incorporates the material parameters of Si in an exact manner has been employed to compare the efficiency, power output, and other important operating characteristics of both complementary structures of Si IMPATT diodes. The results presented here differ greatly from those already reported by other authors. View full abstract»

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  • Stability criterion for Gunn diodes with injection-limiting cathodes

    Publication Year: 1974, Page(s):142 - 146
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (526 KB)

    According to McCumber [1] a Gunn diode with an ohmic cathode (i.e., "differential cathode conductivity"sigma_{c} = delta) is stable in a constant-voltage circuit ifn_{0}L le (n_{0}L)_{crit} equiv 2.7 times 10^{11}cm-2wheren_{0}Lis the doping-length product. We show that the same stability criterion applies to Gunn diodes with an injection-limiting cathod... View full abstract»

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  • Scanning limitations of liquid-crystal displays

    Publication Year: 1974, Page(s):146 - 155
    Cited by:  Papers (182)  |  Patents (23)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (952 KB)

    The scanning limitations of rms-responding liquid-crystal devices as influenced by device characteristics, the type of matrix addressing scheme, and waveform tolerances are quantified in this paper. An rms selection scheme that yields a greater number of scanned lines than a 3:1 selection scheme is presented and analyzed, together with a two-frequency addressing scheme that overcomes limitations o... View full abstract»

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  • Theoretical calculations of the Fermi level and of other parameters in phosphorus doped silicon at diffusion temperatures

    Publication Year: 1974, Page(s):155 - 165
    Cited by:  Patents (9)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1032 KB)

    Taking into account the heavy doping effects (i.e., band tailing and impurity band formation) and high temperature effects, the Fermi level in lightly and heavily compensated phosphorus doped silicon, at normal diffusion temperatures is calculated numerically from the charge neutrality condition. The effective intrinsic carrier concentration is a function of the doping level and of the degree of c... View full abstract»

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  • Performance of P-type epitaxial silicon millimeter-wave IMPATT diodes

    Publication Year: 1974, Page(s):165 - 171
    Cited by:  Papers (13)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (680 KB)

    A series of p-type IMPATT diodes (p+pn+) have been fabricated from epitaxially grown silicon for operation as oscillators at Ka-band frequencies. A maximum CW output power level of 700 mW at 29.6 GHz, a maximum conversion efficiency of 10.9 percent, and a minimum FM noise parameter, M, of 25 dB have been measured on this series of p-type diodes. A diode oscillating... View full abstract»

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  • Liquid-crystal color light valve

    Publication Year: 1974, Page(s):171 - 172
    Cited by:  Patents (8)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (288 KB)

    A multilayer color display device employs two kinds of liquid-crystal films, One is a field-effect nematic liquid crystal; the other comprises a mixture of cholesteric and nematic liquid crystals that have the same function as circular polarizers used in place of crossed polarizers. Three colors (red, green, and blue) can be modulated independently by changing three voltages. View full abstract»

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  • Thermally oxidized mesa Schottky barrier diodes

    Publication Year: 1974, Page(s):172 - 173
    Cited by:  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (320 KB)

    Schottky barriers with a thermally oxidized mesa structure have been fabricated. The fabrication process is described. The mesa structure averts electric field crowding at the barrier periphery. The reverse diode characteristic shows a sharp breakdown at the voltage expected for an ideal, abrupt diode of semi-infinite extent and identical doping concentration. View full abstract»

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  • Electron injection into SiO2in the N channel stacked gate MOS tetrode

    Publication Year: 1974, Page(s):174 - 175
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (304 KB)

    Using a simple model an expression has been derived relating the oxide current to the offset gate voltage in the stacked gate MOS tetrode. View full abstract»

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  • A simple method for the measurement of Gunn diode thermal resistance

    Publication Year: 1974, Page(s):175 - 176
    Cited by:  Papers (4)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (328 KB)

    A method is described by which one can quickly and easily measure the junction-to-ambient thermal resistance of Gunn diodes. View full abstract»

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  • [Back cover]

    Publication Year: 1974, Page(s): c4
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    Freely Available from IEEE

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IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects.

 

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Politecnico di Torino,
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