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IEEE Transactions on Electron Devices

Issue 10 • Date Oct. 1973

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Displaying Results 1 - 15 of 15
  • [Front cover and table of contents]

    Publication Year: 1973, Page(s): c1
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    Freely Available from IEEE
  • Effect of emitter doping on device characteristics

    Publication Year: 1973, Page(s):845 - 851
    Cited by:  Papers (9)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (600 KB)

    The effect of emitter surface doping and emitter diffusion depth on the bandgap narrowing, temperature coefficient of collector current, temperature coefficient of current gain, and burst noise characteristics have been studied. The experimental investigation was done by fabricating two groups of n-p-n transistors. The first group of transistors was fabricated with three different emitter surface ... View full abstract»

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  • The effects of temperature on epitaxial InP transferred electron devices

    Publication Year: 1973, Page(s):852 - 855
    Cited by:  Papers (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (408 KB)

    The performance of Indium Phosphide microwave oscillators is examined over the temperature range 110-470 K. The threshold field of the devices is shown to vary from 7 kV.cm-1at 110 K up to 10 kV. cm-1at 470 K, with a value of 8 kV.cm-1at room temperature. The results indicate little falloff in the operating efficiency of the oscillators between room temperature and... View full abstract»

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  • Surface carrier wave amplification in InSb at X-band

    Publication Year: 1973, Page(s):855 - 863
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (968 KB)

    Experiments have been conducted with slabs (1.5 × 2.5 × 0.3 mm3) of n-InSb to determine the propagation of surface waves in the presence of drifting carriers. Interdigital transducers of 10 fingers each with finger width of 7.5 µ (periodicity 30 µ) are used to excite slow surface waves with phase velocity on the order of the electron drift velocity of 2 × 10... View full abstract»

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  • An integrated wide-band varactor-tuned Gunn oscillator

    Publication Year: 1973, Page(s):863 - 865
    Cited by:  Papers (7)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (256 KB)

    A report is made of a thin-film varactor-tuned Gunn effect oscillator in X band employing unencapsulated diodes. The Gunn device, which is an inverted mesa type, is mounted off the substrate on a copper header and this arrangement can dissipate 7 W without the Gunn device suffering thermal damage. The varactor is a beam-lead silicon p+nn+IMPATT diode connected in series with ... View full abstract»

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  • Artificial creation of threshold characteristics in the domain switching of ferroelectric—Ferroelastic Gadolinium molybdate

    Publication Year: 1973, Page(s):866 - 873
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (760 KB)

    A new method of providing artificially well-defined threshold characteristics in the domain switching of ferroelectric-ferroelastic Gd2(MoO4)3single crystals is presented and experimentally confirmed. The essence of the idea lies in the utilization of a coupling effect between the strain and the polarization which is a characteristic of ferroelectric-ferroelastic c... View full abstract»

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  • Changes of the four noise parameters due to general changes of linear two-port circuits

    Publication Year: 1973, Page(s):874 - 877
    Cited by:  Papers (17)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (304 KB)

    Transformation formulas for the four noise parameters are given as a function of the four scattering parameters. For example, the influence of the lead inductances of a microwave bipolar transistor is examined, showing new significant results. The described procedure is applicable to other semiconductor devices. Most of the general formulas in Section II are believed to be new. View full abstract»

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  • Determination of a collector junction model for planar bipolar transistors

    Publication Year: 1973, Page(s):878 - 883
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (624 KB)

    This paper is concerned with the representation of the collector-base junction of planar bipolar transistors by a model capable of accurate characterization of junction capacitance and avalanche breakdown behavior. The model chosen consists of an exponential impurity density profile with cylindrical peripheral region approximation, and is regarded as the simplest representation suitable for the pu... View full abstract»

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  • Three-dimensional evaluation of energy extraction in output cavities of klystron amplifiers

    Publication Year: 1973, Page(s):883 - 890
    Cited by:  Papers (14)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (808 KB)

    An accurate three-dimensional analysis of the performance of output gaps in klystron amplifiers was carried out. The parameters investigated were: beam radius, perveance, output gap angle, output gap peak voltage, RF phase, magnetic field, and beam interception. A new, accurate method for computing space-charge forces between axially and radially deformable rings was developed. Rigorous expression... View full abstract»

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  • A survey of CW and pulsed Gunn oscillators by computer simulation

    Publication Year: 1973, Page(s):891 - 903
    Cited by:  Papers (7)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1176 KB)

    A computer simulation survey has been carried out on X-band CW and pulsed Gunn oscillators with a variety of contact conditions. It is shown that devices with a large cathode doping notch will have a nearly constant bias voltage-frequency product for optimum RF power generation. Such a relationship is not clear for devices with a smaller notch that is large enough to cause optimum injection of dip... View full abstract»

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  • Influence of the carrier concentration on the mode of high-field domains

    Publication Year: 1973, Page(s):903 - 905
    Cited by:  Papers (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (256 KB)

    From discussions on the behavior of the high-field domain, five different modes are shown to appear successively when changing the carrier concentration in material with a positive field derivative of the carrier-diffusion coefficient. Two of them are cyclically traveling modes whose traveling directions are opposite to each other. The others are trapped-domain modes, and they are classified by th... View full abstract»

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  • Room-temperature lasing of CdS crystals in a glow discharge

    Publication Year: 1973, Page(s):905 - 906
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (216 KB)

    A very compact device has been made for excitation of lasing in CdS at room temperature. A low-pressure glow discharge is produced by high-voltage pulses to pump the CdS crystal. The simple design required to confine the discharge and produce the necessary high density of electrons is described. View full abstract»

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  • Space-charge-limited triode using a Cr-doped semi-insulating GaAs

    Publication Year: 1973, Page(s):906 - 907
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (280 KB)

    By providing ohmic contacts and a rectifying contact to a Cr-doped semi-insulating GaAs material, triode-like device characteristics were experimentally verified. The current drawn through the device is interpreted as space-charge-limited current (SCLC). Operation of the device is shown to be qualitatively in agreement with the vacuum triode analog. View full abstract»

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  • Technique for thermal stabilization of transistors

    Publication Year: 1973, Page(s):907 - 909
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (344 KB)

    An alternative scheme to transistor thermal stabilization by emitter resistor ballasting is proposed. The technique involves a resistor with a negative temperature coefficient of resistance connected across the emitter-base junction which bypasses excess base current that tends to be drawn due to local transistor heating. View full abstract»

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  • [Back cover]

    Publication Year: 1973, Page(s): c4
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    Freely Available from IEEE

Aims & Scope

IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects.

 

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Giovanni Ghione
Politecnico di Torino,
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