IEEE Transactions on Electron Devices

Issue 9 • Sept. 1973

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Displaying Results 1 - 12 of 12
  • [Front cover and table of contents]

    Publication Year: 1973, Page(s): c1
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    Freely Available from IEEE
  • Double-drift IMPATT diodes near 100 GHz

    Publication Year: 1973, Page(s):765 - 771
    Cited by:  Papers (16)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (909 KB)

    This paper reports the highestxpower (frequency)2IMPATTS produced to date. A CW output power of 380 mW has been achieved at 92 GHz with an efficiency of 12.5 percent. An all-implanted double-drift n+-n-p-p+silicon structure was fabricated, using a lightly doped epitaxial layer as the starting material. The newly made structure uses a more shallow n+... View full abstract»

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  • Calculation of the emitter efficiency of bipolar transistors

    Publication Year: 1973, Page(s):772 - 778
    Cited by:  Papers (45)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (592 KB)

    The emitter efficiency of a bipolar transistor is calculated taking heavy doping effects such as impurity band formation and band tailing into account. It is shown that in most cases these effects, rather than the minority carrier lifetime in the emitter are limiting the transistor current gain. This allows us to define an effective emitter impurity profile for use in current transport calculation... View full abstract»

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  • High-frequency limitations of abrupt-junction FET's

    Publication Year: 1973, Page(s):779 - 792
    Cited by:  Papers (9)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (966 KB)

    This paper represents analytical results concerning the high-frequency limitations of FET's of junction-gate or Schottky-gate constructions. The intrinsicyparameters are calculated in closed form using the analog RC transmission line method. The bias dependence of various characteristic factors in the y parameters expressions are presented graphically. Equivalent networks including both... View full abstract»

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  • The design, fabrication, and evaluation of a silicon junction field-effect photodetector

    Publication Year: 1973, Page(s):793 - 801
    Cited by:  Papers (4)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (834 KB)

    A new device for photodetection is introduced in this study that is capable of responsivities comparable to devices operating in the charge-storage mode. Since the physical process involved corresponds to a photodiode in series with a high value of resistance, the device operates in real time and hence avoids the problems of switching encountered in the charge-storage mode at low light levels. The... View full abstract»

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  • Influence of the law of electrical conductivity on thermal switching and breakdown

    Publication Year: 1973, Page(s):801 - 811
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (987 KB)

    Influences of the law of electrical conductivity σ on thermal switching and breakdown events were investigated. The conductivities selected weresigma_{1}propto exp(aT), orsigma_{1}propto exp(-B/T), and also voltageVdependentpropto exp (bV), whenTis temperature and a, B, and b are constants. Simple models, thin film, and cylindrical specim... View full abstract»

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  • The effect of cathode-notch doping profiles on supercritical transferred-electron amplifiers

    Publication Year: 1973, Page(s):812 - 817
    Cited by:  Papers (9)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (560 KB)

    The results of computer simulations are presented to describe the stabilization and amplification performance of supercritically doped transferred-electron devices that contain a cathode-conductivity notch. Broad agreement is found between the theoretical and experimental behavior. Nonlinear conversion of amplitude modulation (AM) to phase modulation (PM) is less than 5°/dB. View full abstract»

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  • A model for calculation of magnetron performance

    Publication Year: 1973, Page(s):818 - 826
    Cited by:  Papers (9)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (880 KB)

    A simplified model of the space charge in a magnetron is proposed, and the performance of the magnetron is calculated; the method differs from that of Welch in the space charge density assigned to the "spokes," and from that of Hull in using energy conservation instead of the principle of induction to identify the operating point. The method is tested by applying it to four known magnetrons, cover... View full abstract»

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  • Optimum design of electron beam-semiconductor linear low-pass amplifiers—Part II: Output capabilities

    Publication Year: 1973, Page(s):827 - 839
    Cited by:  Papers (7)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (1320 KB)

    This paper presents a simplest case analysis of the peak quasi-static output capability of a linear lumped-target beam-semiconductor amplifier. The basic assumptions in the response analysis of Part I [1] are used, together with the premise that the semiconductor velocity-field characteristic exhibits strong saturation at fields well below avalanche breakdown. The analysis applies to the ultimate ... View full abstract»

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  • Author's reply to "Comments on 'noise behavior of GaAs field-effect transistors with short gate length'"

    Publication Year: 1973, Page(s):840 - 841
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  • Tapered windows in SiO2by ion implantation

    Publication Year: 1973, Page(s): 840
    Cited by:  Papers (11)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (256 KB)

    The enhanced etch rate of ion damaged SiO2has been used to controllably taper steps in thermally grown SiO2. A 50-keV Ar+implantation with a dose of 3 × 1013/cm2produces a uniform taper of 35-45° with no vertical step at the top edge of the window. These results are observed by viewing the sample on edge with a scanning electron micr... View full abstract»

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  • [Back cover]

    Publication Year: 1973, Page(s): c4
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    Freely Available from IEEE

Aims & Scope

IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects.

 

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Giovanni Ghione
Politecnico di Torino,
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