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IEEE Transactions on Electron Devices

Issue 7 • Date July 1973

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Displaying Results 1 - 17 of 17
  • [Front cover and table of contents]

    Publication Year: 1973, Page(s): c1
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    Freely Available from IEEE
  • Announcement: Additions to editorial board

    Publication Year: 1973, Page(s): 609
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  • A technique for the study of Gunn devices at 9.1 GHz using a scanning electron microscope

    Publication Year: 1973, Page(s):610 - 612
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (304 KB)

    A scanning electron microscope operating in the stroboscopic mode has been used to observe dynamic voltage distributions in Gunn devices oscillating at 9.1 GHz and hence to examine domain motion. The technique used in the experiment is outlined and sample results presented. View full abstract»

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  • Organic semiconductor bolometric target for infrared imaging tubes

    Publication Year: 1973, Page(s):613 - 620
    Cited by:  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (744 KB)

    Some organic semiconducting polymers have a resistivity that varies to a great extent with temperature. Thin membranes made from these suitably doped materials are covered with a coating that absorbs infrared radiation, thus constituting targets for image pickup tubes of the Vidicon type operating at room temperature. After a theoretical approach to the electrothermal properties of such targets, t... View full abstract»

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  • Generalized representation of electric fields in interaction gaps of klystrons and traveling-wave tubes

    Publication Year: 1973, Page(s):621 - 629
    Cited by:  Papers (45)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (680 KB)

    Analytic expressions for axial and radial electric fields in axisymmetric interaction gaps of klystrons and coupled-cavity traveling-wave tubes are derived. Introduction of a field-shape parameter m allows a continuous transition in gap-edge field distribution between the limit of a uniform constant field for relatively blunt tunnel tips to the limit of a fiel... View full abstract»

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  • Negative conductance of an interdigital electrode structure on a semiconductor surface

    Publication Year: 1973, Page(s):630 - 637
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (840 KB)

    It is shown that an interdigital electrode structure situated near a semiconductor surface may exhibit negative conductance if the drift velocity of the charge carriers in the semiconductor is sufficiently large. The conditions for obtaining this negative conductance are derived, and these theoretical predictions are compared with experimental results obtained for an interdigital electrode structu... View full abstract»

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  • On the avalanche initiation probability of avalanche diodes above the breakdown voltage

    Publication Year: 1973, Page(s):637 - 641
    Cited by:  Papers (34)  |  Patents (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (504 KB)

    In the calculation of the turn-on probabilities per unit time of avalanche diode microplasmas, or of the single-photon detection probabilities of avalanche photodiodes used in the photon-counting mode, it is desirable to know how the avalanche initiation probability varies with voltage above the breakdown voltage. It is shown that the two coupled differential equations derived by Oldham et al. for... View full abstract»

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  • Optimum low-level injection efficiency of silicon transistors with shallow arsenic emitters

    Publication Year: 1973, Page(s):642 - 647
    Cited by:  Papers (8)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (672 KB)

    The influence of As surface concentration CSEon the emitter efficiency βγand the temperature dependence of βγare reported. The theoretical model that is used to explain the variation of βγwith CSEis based upon the difference in the effective energy bandgaps in the emitter and base regions ... View full abstract»

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  • One-dimensional modeling of TRIM

    Publication Year: 1973, Page(s):647 - 653
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (672 KB)

    This paper describes the operation of a p-π-p structure with injecting contact in a mode similar to that of an equivalent p-n-p bipolar transistor. Minority carrier injection takes place from an adjacent n-type layer. Such structures occur in Tri-mask (TRIM) integrated circuits, for example. Because of the low doping in the π region, high injection level effects occur virtually at the on... View full abstract»

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  • Method for plotting frequency cutoff measurements for GaAs varactor diodes

    Publication Year: 1973, Page(s):653 - 655
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (312 KB)

    Frequency cutoff for GaAs varactor diodes of diffused-P+-n-epitaxial n+-substrate construction can be plotted so as to conveniently show dependence of diode cutoff as measured at 10 GHz on diode n-region thickness and substrate resistivity. The measured data fit a model for the diode where the zero bias junction capacitance ... View full abstract»

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  • Defect density distribution for LSI yield calculations

    Publication Year: 1973, Page(s):655 - 657
    Cited by:  Papers (122)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (288 KB)

    The experimental determination of defect density distributions is described. These distributions are needed for calculating LSI yields. The defect densities appear to be distributed according to gamma distributions. An expression for the average yield for a semiconductor process is derived based on the results. View full abstract»

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  • Transferred-electron oscillator device plane measurement

    Publication Year: 1973, Page(s):657 - 659
    Cited by:  Papers (4)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (320 KB)

    The first complete circuit characterization of a GaAs transferred-electron device operated in the delayed domain mode is presented. The detailed nature of the device plane indicates a strong dependence of device conductance and capacitance on frequency and RF amplitude. View full abstract»

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  • Depletion region thicknesses in diffused junctions

    Publication Year: 1973, Page(s):659 - 660
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (248 KB)

    Closed-form expressions are derived for total thickness of the depletion region and thickness of the depletion region on the n side of the junction. The expressions are applicable to n-p junction devices with either complementary error function or Gaussian impurity distributions. Depletion region thicknesses obtained by evaluation of the closed-form expressions are in excellent agreement with exac... View full abstract»

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  • The oblique electron lens

    Publication Year: 1973, Page(s):660 - 662
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (424 KB)

    An oblique electron lens is described that is especially applicable to image converters and camera tubes employing flat opaque photocathodes. The use of optical lenses, corrector plates, and/or mirrors (often employed in other electron lenses designed for use with opaque photocathodes) are eliminated. The oblique electron lens is well suited to ultraviolet and vacuum ultraviolet image converters, ... View full abstract»

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  • Calculations of fringing fields of a quadrupole doublet

    Publication Year: 1973, Page(s):662 - 663
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (264 KB)

    Fringing fields of a quadrupole doublet consisting of circular concave electrodes are calculated by solving the three-dimensional Laplace equation numerically. It is found that the R and θ components in cylindrical coordinates have negligible influence on the normalized fringing potential distributions within the available lens region. View full abstract»

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  • Correction to "The transient behavior of high-field dipole domains in transferred electron devices"

    Publication Year: 1973, Page(s): 663
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  • [Back cover]

    Publication Year: 1973, Page(s): c4
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    Freely Available from IEEE

Aims & Scope

IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects.

 

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Meet Our Editors

Editor-in-Chief

Giovanni Ghione
Politecnico di Torino,
10129 Torino, Italy

Phone +39 011 090 4064
email giovanni.ghione@polito.it