IEEE Transactions on Electron Devices

Issue 6 • June 1973

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Displaying Results 1 - 19 of 19
  • [Front cover and table of contents]

    Publication Year: 1973, Page(s): c1
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    Freely Available from IEEE
  • A study of millimeter-wave GaAs IMPATT oscillator and amplifier noise

    Publication Year: 1973, Page(s):517 - 521
    Cited by:  Papers (7)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (557 KB)

    Noise characterization of a set of epitaxially grown p-n-junction GaAs IMPATTS that operate efficiently from 26-35 GHz is reported. In oscillator operation, the diodes exhibit an excess noise near the carrier, which follows a 1/fdependence. Far from the carrier an AM DSB SNR of 134 dB in a 100-Hz window and an FM noise measure of 36 dB are observed. As a reflection amplifier, a gain of ... View full abstract»

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  • A new grating-type gold-n-type silicon Schottky-barrier photodiode

    Publication Year: 1973, Page(s):522 - 526
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (488 KB)

    The new grating-type Au-n-type Si Schottky-barrier photodiode has been fabricated and analyzed. The device is constructed with a new structure of contact mask. The mask forms a grating of gold film over the contacting silicon substrate. The grating spacing is so chosen that even at zero bias the interfacial layer between the silicon substrate and the gold gratings is completely depleted. The devic... View full abstract»

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  • Transistor design and thermal stability

    Publication Year: 1973, Page(s):527 - 534
    Cited by:  Papers (34)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (688 KB)

    A model has been developed for the computation of forward second breakdown due to lateral thermal instability in power transistors. The method of analysis is to derive the steady-state current density and temperature distribution of a given transistor design under specified operating conditions, and then to calculate the response of the device to a temperature impulse suddenly applied internally. ... View full abstract»

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  • Interlacing in charge-coupled imaging devices

    Publication Year: 1973, Page(s):535 - 541
    Cited by:  Papers (17)  |  Patents (19)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1328 KB)

    Solid-state imaging devices to be used in commercial broadcast TV or the Picturephone® system have to supply the video information in a 2:1 interlaced timing format. An efficient way to achieve such a readout from charge-coupled area imaging devices of the frame transfer type is described. The resolution cells of the device are elongated in the vertical dimension to extend across the distance... View full abstract»

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  • Design considerations of high-efficiency GaAs IMPATT diodes

    Publication Year: 1973, Page(s):541 - 543
    Cited by:  Papers (9)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (280 KB)

    The efficiency and noise of p+n1n2n+GaAs IMPATT diodes have been studied as functions of the doping ratio n1/n2(when n1=n2we have a conventional abrupt p-n junction). For n1/n2>1 there are tradeoffs between efficiency and noise. At 12 GHz, for example, with a ratio of 4 the efficiency i... View full abstract»

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  • Effect of donor density and temperature on the performance of stabilized transferred-electron devices

    Publication Year: 1973, Page(s):544 - 550
    Cited by:  Papers (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (680 KB)

    A large-signal analysis is used to discuss the effect of lattice temperature and temperature gradients on the RF behavior of stabilized transferred-electron devices. The influence of the value of donor density and density gradients upon RF conversion efficiency is also discussed. It is shown that efficiency can be improved if either the heat sink is located at the anode or the donor density is inc... View full abstract»

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  • Depletion layer characteristics at the surface of beveled high-voltage P-N junctions

    Publication Year: 1973, Page(s):550 - 563
    Cited by:  Papers (11)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1920 KB)

    The design of high-voltage p-n-junction devices used today is usually based on beveling of the p-n junctions in order to reduce the tangential surface field far enough below the bulk field and to secure thus that breakdown occurs in the bulk of the device rather than at the surface. Using relaxation methods, solutions of Poisson's equation in two dimensions have been found which reveal that for co... View full abstract»

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  • The light-sensitive MNOS memory transistor

    Publication Year: 1973, Page(s):563 - 572
    Cited by:  Papers (8)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1040 KB)

    In a simple memory application the threshold voltage VTof an MNOS transistor is switched by means of write and erase pulses of opposite polarities between two levels, representing logical ONEs and ZEROs. It is shown that by isolating the source and drain during the write pulse, the magnitude of the VTshift can be made dependent on the intensity of light on the MNOS device. By... View full abstract»

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  • Avalanche-initiated space-charge oscillations

    Publication Year: 1973, Page(s):573 - 581
    Cited by:  Papers (1)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (640 KB)

    Physical mechanisms are proposed for avalanche oscillations in n+-n-n+semiconductor structures. A linearized analysis is proposed for these mechanisms, the results of which agree well with the results of a large-signal computer simulation. The oscillation mechanism is dependent upon a large excess electron concentration that is present at high current levels in the n region o... View full abstract»

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  • A bipolar device modeling technique applicable to computer-aided circuit analysis and design

    Publication Year: 1973, Page(s):582 - 593
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1064 KB)

    The development of a modeling technique for bipolar devices is described. The application of the technique results in complete and realistic large-signal models which are amenable to computer-aided analysis. SCEPTRE has been used to effectively analyze derived models, and results of SCEPTRE analyses of a developed transistor model are presented to illustrate the general capabilities of the modelin... View full abstract»

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  • Electrical stability of bulk "S-shaped" negative differential conductivity media

    Publication Year: 1973, Page(s):593 - 595
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (464 KB)

    As originally postulated by Ridley, bulk media exhibiting isothermal current-controlled negative differential conductivity (NDC) are shown to be unstable with respect to small fluctuations in the current density, leading to current density filamentation. In contrast to Ridley's arguments, however, we describe and elucidate the instability in terms of internal-induced magnetic flux. We show that Le... View full abstract»

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  • An injection locking test for oscillator design

    Publication Year: 1973, Page(s):595 - 596
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    A simple injection-locking experiment for oscillator characterization is demonstrated. The measurements confirm theoretical treatments of injection locking. View full abstract»

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  • Comments on "Noise behavior of GaAs field-effect transistors with short gate lengths"

    Publication Year: 1973, Page(s):596 - 597
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  • An electronically tuned Gunn oscillator circuit

    Publication Year: 1973, Page(s):597 - 598
    Cited by:  Papers (4)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (256 KB)

    A novel waveguide Gunn oscillator circuit is described that permits wide-band mechanical and electronic (varactor) tuning. A feature of the circuit is that a circuit model can be devised that accurately predicts the oscillator characteristics and that, therefore, can be used to formulate a realistic oscillator design procedure. View full abstract»

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  • An approximate formula for electron energy versus path length

    Publication Year: 1973, Page(s):598 - 600
    Cited by:  Papers (2)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (336 KB)

    An approximate analytic solution of the Bethe equation for the mean rate of energy loss is derived. This solution is found to deviate by less than one percent from the numerical integration of the Bethe equation for all values of electron path. It is also shown that when the energy-path length relation is expressed in normalized variables, it exhibits only a very weak dependence on material and in... View full abstract»

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  • Depletion layer amplification from negative differential mobility elements

    Publication Year: 1973, Page(s):600 - 602
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (400 KB)

    Recent n-GaAs experiments and computer simulations have demonstrated that amplification from "supercritical" negative differential mobility (NDM) semiconductors is dependent on the shape of the dc stable electric field versus distance profile. For a specific nonuniform field profile, where a partially depleted charge layer is adjacent to the cathode, we show that small-signal amplification from 10... View full abstract»

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  • Estimation of the impurity redistribution in silicon substrates from MOSFET characteristics

    Publication Year: 1973, Page(s):602 - 603
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (272 KB)

    The impurity redistribution in silicon substrates of MOSFET's is estimated from the measurement of dc voltage-current characteristics using the exact theory of the effect of substrate bias. The usefulness of the present method depends upon the acceptability of substituting the Fermi potential before thermal treatments for that after thermal treatments, which then allows for the direct calculation ... View full abstract»

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  • [Back cover]

    Publication Year: 1973, Page(s): c4
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    Freely Available from IEEE

Aims & Scope

IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects.

 

Full Aims & Scope

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Giovanni Ghione
Politecnico di Torino,
10129 Torino, Italy

Phone +39 011 090 4064
email giovanni.ghione@polito.it