IEEE Transactions on Electron Devices

Issue 4 • April 1973

Filter Results

Displaying Results 1 - 22 of 22
  • [Front cover and table of contents]

    Publication Year: 1973, Page(s): c1
    Request permission for commercial reuse | |PDF file iconPDF (279 KB)
    Freely Available from IEEE
  • The influence of biasing circuits on photomultiplier tube output noise spectra and transfer functions

    Publication Year: 1973, Page(s):341 - 347
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (622 KB)

    An ITT type FW118 photomultiplier tube biased by using a high-voltage power supply and a resistor chain was found experimentally to have output noise spectra decreasing in magnitude as frequency increases, resembling in shape the 1/fnoise spectrum. This lowering of the noise level as frequency increases was explained in terms of: 1) the shunting effect of the interelectrode impedance an... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Field distribution near the surface of beveled P-N junctions in high-voltage devices

    Publication Year: 1973, Page(s):347 - 352
    Cited by:  Papers (26)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (552 KB)

    A new method for investigating the field distribution near the surface of p-n junctions is presented. The results show that for negatively beveled junctions, an absolute field maximum exists underneath the surface. This field maximum rather than the field on the surface determines the breakdown voltage of the device. The dependency of the maximum field on various device parameters as base resistiv... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Thermal limitations of CW and pulsed silicon TRAPATT diodes

    Publication Year: 1973, Page(s):353 - 362
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (905 KB)

    The power density distribution in the avalanche zone of a TRAPATT-diode is approximated by a rectangular pulse in order to consider it as a source function in the heat equation. Heat generation is considered to be periodic, and the dissipation is taken with a thermal time constant larger than the period. The increase in frequency needs a decrease in depletion width, improving the thermal conductio... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • A positive-reading silicon vidicon for X-ray imaging

    Publication Year: 1973, Page(s):362 - 367
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (712 KB)

    A silicon vidicon that uses an n on p silicon diode array for a target was designed. The electron beam landing energy is 600 eV, and all the diodes are charged to a reversed bias by secondary electron emission. With the high electron beam energy, it is possible to sharply focus the beam into a sheet beam, which can be used to simultaneously bombard several separate linear diode arrays in a detecto... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Noise in Gunn oscillators

    Publication Year: 1973, Page(s):368 - 370
    Cited by:  Papers (5)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (318 KB)

    We estimate the ultimate noise of Gunn oscillators in the absence of 1/fnoise. The basic noise source considered is thermal or Johnson noise augmented by intervalley noise of carriers hopping between the high and low mobility bands. For example, for Qext= 102and Pout=10-1W we estimate δfrms≈ 1-2 Hz, and AM noise relative ... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • A simple analysis of the stable field profile in the supercritical TEA

    Publication Year: 1973, Page(s):371 - 379
    Cited by:  Papers (8)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (806 KB)

    An analytical investigation supported by numerical calculations has been performed of the stable field profile in a supercritical diffusion-stabilized n-GaAs transferred electron amplifier (TEA) with ohmic contacts. In the numerical analysis, the field profile is determined by solving the steady-state continuity and Poisson equations. The diffusion-induced short-circuit stability is checked by per... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Using the MIS capacitor for doping profile measurements with minimal interface state error

    Publication Year: 1973, Page(s):380 - 389
    Cited by:  Papers (9)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (1096 KB)

    Doping profiles can be measured to best advantage by using MIS capacitors when one is interested in the profile either very close to the semiconductor surface or in very heavily doped semiconductors. This paper shows both experimentally and theoretically that the major error caused by interface states can be minimized by using either the pulsed capacitance voltage technique or by the second-harmon... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Extended charge-control model for bipolar transistors

    Publication Year: 1973, Page(s):389 - 394
    Cited by:  Papers (24)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (544 KB)

    In modeling bipolar transistors the charge-control concept provides a means to predict dynamic behavior from a detailed knowledge of the steady state. As such, it is a first-order approximation lacking accuracy. It is shown that a considerable improvement can be obtained when the concept is extended by allowing time delays in the relations between controlling charges and terminal voltages and curr... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • A current-excited large-signal analysis of IMPATT devices and its circuit implications

    Publication Year: 1973, Page(s):395 - 399
    Cited by:  Papers (4)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (520 KB)

    A large-signal analysis of a Read-type IMPATT diode is carried out with a sinusoidal current as the excitation. The results are compared with analyses that assume a sinusoidal voltage excitation. The large-signal impedance of the diode with current excitation is expressed in closed form. The circuit implications of choosing voltage or current as the excitation are discussed. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Technology for monolithic high-power integrated circuits using polycrystalline Si for collector and isolation walls

    Publication Year: 1973, Page(s):399 - 404
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (960 KB)

    The fabrication technology for a high-power monolithic IC improved the breakdown characteristics and the output current capability. The maximum output power increased to 50 W and the supplied voltage of 110 V was realized. Highly doped polycrystalline Si was used as the collector walls and the isolation walls of transistors. Electrical and physical properties of the polycrystalline structure used ... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Computer simulation of instability and noise in high-power avalanche devices

    Publication Year: 1973, Page(s):404 - 418
    Cited by:  Papers (15)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (1832 KB)

    The operation of avalanche transit-time devices at or near their output saturation point is often accompanied by instabilities and a deterioration of the spectral purity of the output signal. This can be attributed to a number of nonlinear effects that give rise to additional static or dynamic negative resistance. Depending on the external RF and bias circuit conditions, spurious oscillations, dis... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Theory of a forward-biased diffused-junction P-L-N rectifier—Part III: Further analytical approximations

    Publication Year: 1973, Page(s):418 - 426
    Cited by:  Papers (8)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (936 KB)

    The approximate theory of the diffused-junction p-L-n rectifier, as developed in Part II of this series [2], is extended to include the realistic situation where the number of recombination centers in the diffused region can be much greater than that in the base region. The proposed extension employs the same analytical model for the diffused junction as in Part II, but uses a different approach i... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Optimum design of power transistor switches

    Publication Year: 1973, Page(s):426 - 435
    Cited by:  Papers (13)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (1000 KB)

    An optimization procedure is developed that completely specifies the one-dimensional design of a double-diffused transistor with only two pieces of input data required--the collector-emitter sustaining voltage and the current gain required when the device is operating in the region of quasi-saturation. A simple but experimentally validated model for predicting hFEversus ICis ... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Performance of electron beam-semiconductor amplifiers

    Publication Year: 1973, Page(s):436 - 439
    Cited by:  Papers (4)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (440 KB)

    Experimental results obtained with developmental electron beam-semiconductor devices used as video-pulse and RF pulsed amplifiers are discussed. These devices employ a grid-modulated electron beam to control the current in a semiconductor target. Power gains of 26 dB and peak pulse powers of 40 W were obtained at up to 600 MHz with an untuned output impedance of 20 Ω. Peak powers in excess of... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Design and performance of deflected-beam electron-bombarded semiconductor amplifiers

    Publication Year: 1973, Page(s):439 - 447
    Cited by:  Papers (5)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (1432 KB)

    This paper describes the design and testing of developmental electron-bombarded semiconductor (EBS) devices as pulsed dc and pulsed RF amplifiers. These devices employ a well-focused electron beam deflected in proportion to the input signal to control the current in a semiconductor target. Both Class A and Class B amplifier configurations are described, with a prediction of their relative efficien... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Optimum design of electron beam-semiconductor linear low-pass amplifiers—Part I: Bandwidth and rise time

    Publication Year: 1973, Page(s):447 - 455
    Cited by:  Papers (7)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (912 KB)

    This paper begins with a brief description of the basic electrical characteristics and principles of operation of the lumped-element electron-beam-excited-semiconductor amplifier. It is shown that stable current gains of several thousand may be obtained through the interaction of a 10-keV electron beam with a shallow reverse-biased p-n junction device (semiconductor target). Simplest case analyses... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Spectral density of noise generated in charge transfer devices

    Publication Year: 1973, Page(s): 456
    Cited by:  Papers (14)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (160 KB)

    We calculate the spectral density of the noise added to an analog signal passed through a charge transfer device (CTD) in terms of the charge fluctuation associated with each transfer. A correlation between noise in neighboring elements substantially suppresses the energy content of the noise associated with charge transfer for frequencies much less than the clock frequency. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Effects of lateral surface generation on the MOS-C linear-sweep and C-t transient characteristics

    Publication Year: 1973, Page(s):457 - 458
    Cited by:  Papers (3)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (280 KB)

    Observed effects of lateral surface generation on the MOS-C C-t transient and linear-sweep C-VGcharacteristics are noted and explained in terms of a qualitative model that emphasizes the heretofore ignored role of outer oxide surface ions. It is suggested that the lateral generation component is functionally more complex than previously conceived, and that this fact can lead to erroneou... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Pattern design of power transistors

    Publication Year: 1973, Page(s):458 - 460
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (312 KB)

    The distribution of the emitter current density along the emitter stripe in the comb structure has been analytically obtained by taking into account the junction temperature and the sheet resistance of the diffused base layer, From this result the optimum length of the emitter stripe has been obtained. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • A numerical analysis of space-charge-limited electron flow

    Publication Year: 1973, Page(s):460 - 461
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (248 KB)

    The space-charge-limited gun problem is solved by a numerical method that differs from the commonly employed technique of estimating the space-charge density (ρ) from trajectory information. Instead, the constitutive equations are used to find ρ in each unit cell. Results of two sample calculations are discussed. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • [Back cover]

    Publication Year: 1973, Page(s): c4
    Request permission for commercial reuse | |PDF file iconPDF (1485 KB)
    Freely Available from IEEE

Aims & Scope

IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects.

 

Full Aims & Scope

Meet Our Editors

Editor-in-Chief

Giovanni Ghione
Politecnico di Torino,
10129 Torino, Italy

Phone +39 011 090 4064
email giovanni.ghione@polito.it