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IEEE Transactions on Electron Devices

Issue 3 • Date March 1973

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Displaying Results 1 - 22 of 22
  • [Front cover and table of contents]

    Publication Year: 1973, Page(s): c1
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    Freely Available from IEEE
  • Current saturation and small-signal characteristics of GaAs field-effect transistors

    Publication Year: 1973, Page(s):213 - 220
    Cited by:  Papers (58)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (712 KB)

    The model previously proposed by Turner and Wilson is developed in detail and compared with experiment. Deviations from Shockley's classical theory can be accounted for in terms of a single quantity Γ, which is related to Emthe peak field for GaAs. A discussion of the physical mechanism of current saturtation shows that the formation of domains within the channel is hampered in a c... View full abstract»

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  • Effects of diffusion-induced dislocations on the excess low-frequency noise

    Publication Year: 1973, Page(s):221 - 226
    Cited by:  Papers (6)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (680 KB)

    This paper discusses the device characteristics of the emitter-base junction, linearity of the static forward-current transfer ratio, and excess low-frequency noise in bipolar transistors by use of gate-controlled n-p-n transistors fabricated by varying the deposition rate of phosphosilicate glass in the emitter deposition. As a result of increasing the deposition rate of phosphosilicate glass, th... View full abstract»

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  • Epitaxial V-groove bipolar integrated circuit process

    Publication Year: 1973, Page(s):226 - 232
    Cited by:  Papers (11)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1088 KB)

    A new four-mask "V-groove" process for the fabrication of bipolar integrated circuits has been developed. The process utilizes epitaxial ν/n+/n-layers and anisotropic etching of ... View full abstract»

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  • The effect of some composite structures on the thermal resistance of substrates and integrated circuit chips

    Publication Year: 1973, Page(s):233 - 238
    Cited by:  Papers (18)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (504 KB)

    An exact three-dimensional solution to the differential equation for steady-state heat transfer in composite media has been derived. Detailed results for 0.050-in-square chips mounted on 1- and 2-in-square substrates show that the thermal resistance of alumina substrates may be expected to increase by as much as 80 percent upon application of a glaze to the surface. The thermal resistances of beam... View full abstract»

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  • MOS-bipolar monolithic integrated circuit technology

    Publication Year: 1973, Page(s):239 - 244
    Cited by:  Papers (6)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (744 KB)

    A technique for the fabrication of p-channel MOS transistors and bipolar transistors within monolithic integrated circuits is described. Total process compatibility has been achieved without compromising either the n-p-n bipolar or p-channel MOS characteristics. The technology developed is similar to that used for conventional integrated circuits until the channel oxidation step, A low temperature... View full abstract»

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  • A charge-coupled area image sensor and frame store

    Publication Year: 1973, Page(s):244 - 252
    Cited by:  Papers (14)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (2352 KB)

    A two-dimensional three-phase charge-coupled array with 128 × 106 elements, that can serve either as a solid-state image sensor or as an analog serial memory, has been built. As an image sensor the device has been operated successfully in the frame transfer mode to yield 120 frames/s with 64 × 106 resolution elements. By using the whole array as an image sensor, pictures with 128 × ... View full abstract»

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  • Switching mechanism in thin-oxide MNOS devices

    Publication Year: 1973, Page(s):253 - 256
    Cited by:  Papers (4)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (360 KB)

    The results of pulsed switching experiments and the dc I-V characteristics of thin-oxide (∼20 Å) MNOS devices indicate that the dominant switching mechanism is not necessarily the direct tunneling of electrons to and from states at or near the oxide-nitride interface. Instead, it appears that switching may actually be the result of the tunneling of... View full abstract»

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  • High current regimes in transistor collector regions

    Publication Year: 1973, Page(s):257 - 263
    Cited by:  Papers (35)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (712 KB)

    The falloff of transistor gain and cutoff frequency at high currents is a familiar phenomenon. We show here, for the case of transistors having epitaxial collectors, how the mechanism responsible for the falloff depends upon device operating conditions. At any Vcb, a current can be calculated above which falloff begins. If the magnitude of Vcbis lower than a critical value V... View full abstract»

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  • Equivalent circuit analysis of noise in bulk semiconductor devices

    Publication Year: 1973, Page(s):264 - 274
    Cited by:  Papers (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1008 KB)

    Equivalent transmission-line analogs may be developed to advantage for the analysis of noise in bulk semiconductor devices. We discuss first a transmission-line analog for the law of conduction and diffusion of a single species of charge carriers that experience small disturbances from equilibrium. Through the use of Nyquist's theorem it is possible to obtain the power spectra of the noise sources... View full abstract»

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  • Computer analysis of the double-diffused MOS transistor for integrated circuits

    Publication Year: 1973, Page(s):275 - 283
    Cited by:  Papers (16)  |  Patents (6)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (816 KB)

    The effective length of an MOS transistor can be made narrow by using double diffusion similar to a bipolar transistor. Computations were conducted for an n-channel double-diffused transistor with different surface concentrations, channel lengths, channel gradients, surface-states densities, and substrate concentrations. A shorter channel length and a higher surface-state density, e.g. View full abstract»

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  • Depletion-mode IGFET made by deep ion implantation

    Publication Year: 1973, Page(s):283 - 289
    Cited by:  Papers (17)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (711 KB)

    p-channel depletion-mode IGFET's for use as depletion-load elements have been fabricated on View full abstract»

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  • Transport equations in heavy doped silicon

    Publication Year: 1973, Page(s):290 - 298
    Cited by:  Papers (126)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (728 KB)

    The general transport equations in a heavy doped semiconductor are given, taking the position-dependent band structure into account. An intrinsic concentration depending on the doping levels is introduced. This quantity allows us to use the classical equations in a slightly modified form, if Maxwell-Boltzmann statistics can be applied for one or both kinds of the carrier. The total density of stat... View full abstract»

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  • Infrared observation of the breakdown behavior of high-voltage p-n junctions and p-n-p structures in silicon

    Publication Year: 1973, Page(s):299 - 303
    Cited by:  Papers (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (728 KB)

    It is shown that the radiation emitted at breakdown from large-area high-voltage p-n junctions and from p-n-p structures can be detected using an infrared image converter in conjunction with a three-stage image intensifier. In the example given, the patterns of the emitted light consist of segments of circles and spirals, indicating an inhomogeneous breakdown across the area. The inhomogeneous bre... View full abstract»

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  • Unified treatment of small-signal space-charge dynamics in bulk-effect devices

    Publication Year: 1973, Page(s):303 - 316
    Cited by:  Papers (5)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1264 KB)

    Space-charge dynamics in semiconductors with negative differential mobility are discussed in a small-signal approximation taking account of the role of carrier diffusion and are shown to exhibit fundamentally four different properties. These differences originate from two conditions, one being the direction of propagation of the space-charge wave and the other being whether the space-charge wave i... View full abstract»

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  • An ion-implanted Schottky-barrier gate field-effect transistor

    Publication Year: 1973, Page(s):317 - 320
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (456 KB)

    Techniques of fabricating an n-channel silicon field-effect transistor using phosphorus ion implantation and a platinum silicide Schottky-barrier gate (SB-FET) have been developed. The platinum silicide Schottky-barrier top gate is part of the contact metallization process. The phosphorus-doped channel is obtained by using a 50-keV ion-implanted predeposition and an 1100°C drive-in. A range o... View full abstract»

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  • The silicon cold cathode

    Publication Year: 1973, Page(s):321 - 329
    Cited by:  Papers (8)  |  Patents (5)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1320 KB)

    Cold cathode emission has been obtained from forward-biased silicon p-n junctions whose p-surfaces were activated to a state of negative electron affinity. In operation, electrons injected into the p-layer diffuse to the surface where they are emitted into vacuum. An Si:SiO2structure has been developed to overcome the problems associated with current crowding, and with this structure, e... View full abstract»

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  • Modeling base crowding in a bipolar transistor

    Publication Year: 1973, Page(s):329 - 330
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (232 KB)

    It is shown that in a model of a bipolar transistor with a rectangular configuration, the base-crowding effect may be represented by a diode and a resistor in parallel between the internal base point and the external base connection with an accuracy of better than four percent. View full abstract»

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  • Subsurface breakdown device reliability

    Publication Year: 1973, Page(s):330 - 331
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (208 KB)

    New data from special bipolar junctions that breakdown below the Si-SiO2interface are described. The devices were broken down both in a dc and pulse fashion, and junction degradation in the form of increased reverse leakage and reduced minority carrier lifetime was investigated. No degradation was observed. View full abstract»

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  • A method for reducing the decay time of a liquid crystal

    Publication Year: 1973, Page(s): 332
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (120 KB)

    The decay time of a nematic liquid crystal driven by a dc pulse has been reduced from 170 to 30 ms without significantly reducing the light modulation by continuously applying an ac voltage of selected amplitude and frequency. View full abstract»

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  • Carrier concentration from MIS C-V measurements

    Publication Year: 1973, Page(s):332 - 333
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (184 KB)

    By means of a graphical method the bulk carrier concentration can be deduced from the minimum normalized capacitance of a MIS structure with an arbitrary semiconductor, insulator, and insulator thickness. View full abstract»

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  • [Back cover]

    Publication Year: 1973, Page(s): c4
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    Freely Available from IEEE

Aims & Scope

IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects.

 

Full Aims & Scope

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Editor-in-Chief

Giovanni Ghione
Politecnico di Torino,
10129 Torino, Italy

Phone +39 011 090 4064
email giovanni.ghione@polito.it