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IEEE Transactions on Electron Devices

Issue 2 • Feb. 1973

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Displaying Results 1 - 16 of 16
  • [Front cover and table of contents]

    Publication Year: 1973, Page(s): c1
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    Freely Available from IEEE
  • Some editorial comments

    Publication Year: 1973, Page(s):89 - 90
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  • Amorphous semiconductors for switching, memory, and imaging applications

    Publication Year: 1973, Page(s):91 - 105
    Cited by:  Papers (153)  |  Patents (4)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (2160 KB)

    Performance and reliability of amorphous semiconductor devices that deal with the handling of information in the form of switching, modulation, storage, and display are discussed. Structural changes between a disordered and a more ordered state and the concomitant large change in many material properties offer the possibility of using amorphous semiconductors for high-density information storage a... View full abstract»

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  • Electronic conduction and switching in chalcogenide glasses

    Publication Year: 1973, Page(s):105 - 122
    Cited by:  Papers (8)  |  Patents (204)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1864 KB)

    Evidence for electronic conduction in the preswitching region of chalcogenide glasses is outlined and discussed in terms of several simple models. Electronic processes likely to contribute to the switching process itself are reviewed and compared, where possible, with the predictions of relevant models from conventional semiconductor physics. View full abstract»

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  • Reversible thermal breakdown as a switching mechanism in chalcogenide glasses

    Publication Year: 1973, Page(s):123 - 131
    Cited by:  Papers (47)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1032 KB)

    A review of the main features of chalcogenide glass switches is given and interpreted in terms of a thermal runaway mechanism. It is shown that a simple one-dimensional theory is insufficient for describing thin films, and several developments are discussed, including field-dependent effects, channeling instabilities, and electrode hot spots. Suggestions for future work, both theoretical and exper... View full abstract»

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  • Operation and performance of amorphous selenium-based photoreceptors

    Publication Year: 1973, Page(s):132 - 139
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (880 KB)

    This paper presents a general description of the xero-graphic photoreceptor and its role in the imaging process. The photoreceptor is described in terms of two properties, the photoinduced charge-generation efficiency and the charge transport through the bulk of the material. The relationships between these fundamental photoreceptor properties and the final electrostatic imaging system are present... View full abstract»

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  • Switching and memory effects in amorphous chalcogenide thin films

    Publication Year: 1973, Page(s):140 - 144
    Cited by:  Patents (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1056 KB)

    The performance of threshold- and memory-switching devices is discussed. The threshold devices were prepared by vacuum deposition from the Ge-As-Te-Si system and exhibited threshold voltages over a wide range from less than 2.0 V to greater than 50 V. Lifetimes of the order of 106-108switching operations before failure were obtained and the operation of the threshold device w... View full abstract»

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  • Delay time measurement in transition metal oxide glass devices

    Publication Year: 1973, Page(s):144 - 149
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (568 KB)

    The switching delay times for transition metal oxide glass devices vary from operation to operation. However, a statistical treatment of delay time measurements has revealed the voltage dependence of the delay times and the existence of a well-defined threshold voltage for all of the devices tested. The effect of the switch-OFF history on the performance of the devices has also been investigated. ... View full abstract»

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  • Bistable switching and conduction mechanisms in Nb-Nb2O5-Bi junctions

    Publication Year: 1973, Page(s):149 - 157
    Cited by:  Papers (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1068 KB)

    Bistable switching and conduction in niobium-niobium oxide-bismuth devices has been investigated. A number of these devices were found to be stable for more than 106switching cycles and a limited number for more than 109cycles. Upper bounds of 1 and 20 µs for switching from high to low and low to high resistance states, respectively, were observed. Three distinct types o... View full abstract»

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  • Accumulation effects in an amorphous chalcogenide thin-film switch

    Publication Year: 1973, Page(s):157 - 160
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (560 KB)

    A Te-As-Si-Ge thin-film switch has been investigated by pulse program measurements. Switching occurs after a certain delay time, during which the energy necessary for switching is accumulated. Increasing the pressure applied to the devices leads to a decrease of the switching energy. After removal of the voltage, the device will return to the low-conduction state after a recovery time. Two effects... View full abstract»

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  • Electron beam heating in amorphous semiconductor beam memory

    Publication Year: 1973, Page(s):160 - 169
    Cited by:  Papers (1)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (976 KB)

    The high-speed electron beam heating and the subsequent cooling processes in an amorphous semiconductor target of a beam memory have been studied by computer simulation. Such a memory would utilize the amorphous and the crystalline phases of chalcogenide thin films as the binary states of the memory. For an electron source of 1-µ radius, the results suggest that a storage target, consisting o... View full abstract»

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  • Analysis of an inhomogeneous bulk "S-shaped" negative differential conductivity element in a circuit containing reactive elements

    Publication Year: 1973, Page(s):169 - 178
    Cited by:  Papers (4)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1032 KB)

    This paper analyzes the time and space evolution of the current density distribution in an inhomogeneous bulk "S-shaped" negative differential conductivity (SNDC) element and the response of the surrounding lumped element circuit. The SNDC element, in series with a package inductance, is in parallel with a package capacitance, the loop being in series with a load resistance and a battery. First th... View full abstract»

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  • Circuit applications of Ovonic switching devices

    Publication Year: 1973, Page(s):178 - 187
    Cited by:  Papers (2)  |  Patents (18)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1080 KB)

    A review of application circuits for two-terminal amorphous semiconductor switching devices encompassing both the threshold and memory switches is presented, including brief discussions of device electrical and structural characteristics. The most useful electrical properties of these devices are seen to be the threshold turn-on characteristic and the high on-to-off impedance ratio, in the range 1... View full abstract»

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  • A terminal multiplexor application of Ovonic memories

    Publication Year: 1973, Page(s):188 - 194
    Cited by:  Patents (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (800 KB)

    A special purpose computer intended primarily for use as a terminal multiplexor has been constructed. Program storage for the processor is implemented using an Ovonic read-mostly memory. In addition a bipolar scratchpad memory is implemented for data buffering and status information storage. The processor organization and the Ovonic memory design are discussed. The Ovonic memory is modular in 2048... View full abstract»

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  • The application of amorphous materials to computer memories

    Publication Year: 1973, Page(s):195 - 205
    Cited by:  Papers (25)  |  Patents (256)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1624 KB)

    Two specific examples of the application to computer memories of order-disorder transitions in amorphous semiconductors are discussed. The particular physical changes utilized and accompanying the order-disorder transition are a resistance change and an optical change. The resistance change is applied to an electrically alterable Read-Mostly memory (RMM) and the optical change to a laser-alterable... View full abstract»

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  • [Back cover]

    Publication Year: 1973, Page(s): c4
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    Freely Available from IEEE

Aims & Scope

IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects.

 

Full Aims & Scope

Meet Our Editors

Editor-in-Chief

Giovanni Ghione
Politecnico di Torino,
10129 Torino, Italy

Phone +39 011 090 4064
email giovanni.ghione@polito.it