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IEEE Transactions on Electron Devices

Issue 1 • Jan. 1973

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Displaying Results 1 - 15 of 15
  • [Front cover and table of contents]

    Publication Year: 1973, Page(s): c1
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    Freely Available from IEEE
  • The transient behavior of high-field dipole domains in transferred electron devices

    Publication Year: 1973, Page(s):1 - 5
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (520 KB)

    This paper provides an explanation for previously unexplained aspects of the transient experiments of Kuru, Robson, and Kino [1]. It is shown that in a transient experiment on a dipole domain in a transferred electron device, the ratio of change in charge at the domain to the charge transferred at the external terminals is strongly dependent on the magnitude of the bias step. For a small bias step... View full abstract»

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  • The RCI model—A general model for semiconductor devices

    Publication Year: 1973, Page(s):5 - 12
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (768 KB)

    The RCI model is an electric network consisting of lumped resistors, capacitors, and controlled current sources. It simulates the three-dimensional time-dependent transport and continuity equations and the Poisson equation for nondegenerated semiconductors without additional restriction except the spatial discretization error. Therefore, the model is suitable to describe the steady-state solution ... View full abstract»

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  • Intrinsic FM noise of Gunn oscillators

    Publication Year: 1973, Page(s):12 - 14
    Cited by:  Papers (7)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (352 KB)

    It has been experimentally shown that the product of the mean frequency deviation of FM noise and the external quality factor varies inversely proportional to the power output of Gunn oscillators. This behavior of FM noise of Gunn oscillators with power output is in very good agreement with theoretical predictions of large-signal diffusion noise in GaAs devices. At optimum power output, the calcul... View full abstract»

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  • The piezoelectric capillary injector—A new hydrodynamic method for dot pattern generation

    Publication Year: 1973, Page(s):14 - 19
    Cited by:  Papers (29)  |  Patents (5)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (952 KB)

    When liquid is driven in pulses through two small apertures with liquid between them, there is a hydrodynamic pumping phenomena in the liquid flow. The pulsation can be produced by volume variations obtained from a piezoelectric crystal. The device works as an impulse pump, which can be controlled by modulated electric pulses. When the liquid is ink, the device can be used to generate a dot patter... View full abstract»

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  • Yield optimization of integrated circuits

    Publication Year: 1973, Page(s):19 - 28
    Cited by:  Papers (4)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (968 KB)

    A design approach is presented that optimizes the component areas of integrated circuits so as to maximize the yield. The performance index to be optimized is defined as the chip yield divided by the chip area, which corresponds to the number of good chips in a wafer. The area of each component is determined to maximize this performance index by a nonlinear programming technique. The design of int... View full abstract»

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  • Optical readout from plasma display/memory panels

    Publication Year: 1973, Page(s):28 - 35
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (912 KB)

    Techniques for extracting stored information from an array of plasma display elements using optical detection systems are presented. Two specific electronic drive schemes and several experimental area photodetector systems used in realizing readout capability in display systems are described. Limitations of optical read-out systems due to optical noise generated by the display panel and by inciden... View full abstract»

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  • A two-dimensional numerical FET model for DC, AC, and large-signal analysis

    Publication Year: 1973, Page(s):35 - 45
    Cited by:  Papers (55)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1192 KB)

    A numerical model is presented allowing calculation of the dc, ac, and large-signal parameters of field-effect transistors (FET's). The numerical procedure is based on finite-difference approximations to the full time-dependent set of equations. The scheme presented uses centered difference quotients and an implicit treatment of the continuity equation. It is shown to be absolutely stable and accu... View full abstract»

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  • The quantitative effects of interface states on the performance of charge-coupled devices

    Publication Year: 1973, Page(s):45 - 55
    Cited by:  Papers (44)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1560 KB)

    The several effects of interface states in limiting the performance of surface channel charge-coupled devices (CCD's) are described and evaluated. The limitations on transfer efficiency may be minimized by using a background charge in the device at all times. Experimental measurements of transfer inefficiency on three-phase devices and a two-phase device are presented and correlated with the predi... View full abstract»

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  • Current spreading at contacts to planar Gunn devices

    Publication Year: 1973, Page(s):56 - 59
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (464 KB)

    The implications of current constriction at a planar contact to GaAs are inferred from the results of a simpler case (current flow to a small conducting cylinder). It is argued that a number of the pathological properties of Gunn diodes can be explained in terms of this mechanism. View full abstract»

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  • The mapping theorem of two-dimensional electron beam trajectories

    Publication Year: 1973, Page(s):60 - 62
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (264 KB)

    Two-dimensional electron beams in certain electrostatic fields are dealt with, ignoring space-charge effects. The central trajectories of electron beams were previously given. The electron beam in a suitable electrostatic field fluctuates near the given trajectory just as a paraxial electron beam fluctuates near the axis. If both fluctuations agree completely, the electron beam considered can be r... View full abstract»

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  • On the form and stability of electric-field profiles within a negative differential mobility semiconductor

    Publication Year: 1973, Page(s):63 - 78
    Cited by:  Papers (12)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1528 KB)

    Using a fixed cathode boundary field model we examine analytically the form and stability of inhomogeneous prethreshold electric-field profiles in long bulk negative differential mobility (NDM) semiconductors. We show that the electric-field profiles and their associated current-voltage relationships depend in a detailed way on the characteristics of the bulk material (e.g., the velocity-electric-... View full abstract»

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  • Ternary operation of the plasma display cell

    Publication Year: 1973, Page(s):78 - 80
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (320 KB)

    The plasma display cell, in the normal mode, operates as a bistable ON-OFF element. Under certain conditions, by applying the appropriate sustaining signal, the cell can be maintained in one of several possible ON states that can be distinguished from each other by the light or current output of each state. Conditions on a class of sustaining signals that can sustain the cell in two ON states and ... View full abstract»

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  • A convenient form of graph paper for determination of electrooptical device modulation transfer function parameters

    Publication Year: 1973, Page(s):80 - 81
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (288 KB)

    A convenient form of graph paper is described that allows the frequency constant (fc) and the MTF index (n) of many devices to be easily determined. View full abstract»

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  • [Back cover]

    Publication Year: 1973, Page(s): c4
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    Freely Available from IEEE

Aims & Scope

IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects.

 

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Editor-in-Chief

Giovanni Ghione
Politecnico di Torino,
10129 Torino, Italy

Phone +39 011 090 4064
email giovanni.ghione@polito.it