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IEEE Transactions on Electron Devices

Issue 12 • Dec. 1972

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Displaying Results 1 - 14 of 14
  • [Front cover and table of contents]

    Publication Year: 1972, Page(s): c1
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    Freely Available from IEEE
  • Electrical properties of nickel-low-doped n-type gallium arsenide Schottky-barrier diodes

    Publication Year: 1972, Page(s):1231 - 1238
    Cited by:  Papers (5)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (743 KB)

    The forward current characteristics of nickel-low-doped n-type gallium arsenide Schottky-barrier diodes are measured over the temperature range 90.5-434 K. The ideality factor and its temperature dependence is determined and found to decrease with increasing temperature according to the relationshipn(T) = 11.4T^{-1/2}+0.444 to within ±4 percent. This is in agreement with the theore... View full abstract»

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  • Small-signal theory of unipolar injection currents in solids

    Publication Year: 1972, Page(s):1239 - 1251
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1400 KB)

    Small-signal behavior of unipolar currents injected in semiconductors or insulators is theoretically studied. The one-dimensional problem of plane-parallel electrodes is considered. Analysis neglects diffusion but takes into account carrier mobility field dependence, ionized impurities, and trapping. Arbitrary boundary conditions are assumed. The present theory describes the small-signal response ... View full abstract»

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  • The TTCRT: Thermal-transmission cathode-ray tube for thermal printing

    Publication Year: 1972, Page(s):1252 - 1261
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1224 KB)

    We propose a new kind of cathode-ray tube, namely, the thermal-transmission cathode-ray tube (TTCRT). In the TTCRT the electron beam focused to a small spot is called upon to heat in sequence small elements of a matrix that constitutes the faceplate of the tube. A heat-sensitive or thermal paper passed across the screen and maintained in contact with it, and outside the tube, will record character... View full abstract»

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  • The feasibility of a proposed superconducting neuristor realization

    Publication Year: 1972, Page(s):1262 - 1269
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1176 KB)

    The neuristor has been the subject of much experimental work, but no completely successful realization has yet emerged. In this paper a line is examined based on the motion of a normal region in a superconducting film superimposed on a conducting film. The current distribution near a moving normal/superconducting boundary is discussed and three operating modes are defined as functions of the displ... View full abstract»

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  • Charge-control method of charge-coupled device transfer analysis

    Publication Year: 1972, Page(s):1270 - 1279
    Cited by:  Papers (15)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (952 KB)

    An analysis of charge transfer based on the "charge-control" approach has been made for charge-coupled devices (CCD's). A general closed-form equation for the charge transfer efficiency has been obtained that includes the major mechanisms of 1) charge-gradient induced drift, 2) thermal diffusion, 3) an external fringing field, and 4) charge loss due to traps or recombination. When the charge loss ... View full abstract»

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  • Characterization of thin-oxide MNOS memory transistors

    Publication Year: 1972, Page(s):1280 - 1288
    Cited by:  Papers (155)  |  Patents (79)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (951 KB)

    A direct tunneling theory is formulated and applied to high-speed thin-oxide complementary metal-nitride-oxide-silicon (MNOS) memory transistors. Charge transport in the erase/write mode of operation is interpreted in terms of the device threshold voltage shift. The threshold voltage shift in the erase/write mode is related to the amplitude and time duration of the applied gate voltage over the fu... View full abstract»

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  • Semiconductor current-flow equations (diffusion and degeneracy)

    Publication Year: 1972, Page(s):1288 - 1292
    Cited by:  Papers (37)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (448 KB)

    The correct form for the current-flow equation in semiconductors in the presence of density and temperature gradients, as well as electric fields, is derived from a perturbation solution of Boltzmann's equation. The conditions under which the various widely used approximate forms of the current-flow equation are valid are clearly discussed. A new term that occurs if the relaxation time depends on ... View full abstract»

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  • A high-frequency variable delay line

    Publication Year: 1972, Page(s):1292 - 1294
    Cited by:  Papers (13)  |  Patents (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (256 KB)

    A short highly variable VHF delay line is described, in which variability is achieved by changing the primary volume of electric field energy storage. It is fabricated using well-established planar integrated-circuit techniques. View full abstract»

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  • Exact solutions of the linearized equation for current flow in negative differential mobility elements

    Publication Year: 1972, Page(s):1294 - 1296
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (344 KB)

    Space- and time-dependent perturbations of position-dependent stationary electric field profiles within negative differential mobility (NDM) elements are found as exact solutions of a linearized current density equation. The solutions, more general than those discussed previously, explicitly show the perturbation to be an accumulation of propagating disturbances. The solutions are used to demonstr... View full abstract»

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  • Effect of surface states on surface-wave amplification in a composite structure of CdSe film on LiNbO3

    Publication Year: 1972, Page(s):1296 - 1297
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (304 KB)

    A qualitative agreement is obtained between the theoretical and experimentally observed gain characteristics of a structure of LiNbO3having a film of CdSe deposited on it. However, there is a large discrepancy between the values of the gain. It is argued that the presence of a depletion layer and traps at the LiNbO3-CdSe interface can account for the discrepancy. View full abstract»

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  • Large-signal lumped modeling and characterization of an IMPATT diode

    Publication Year: 1972, Page(s):1297 - 1298
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (248 KB)

    An accurate large-signal lumped model of a Read IMPATT diode and external circuit is developed. The equations in state-space form are solved on an 8K-word computer, allowing complete interaction between the operator and the machine. Results obtained agree closely with measurement. View full abstract»

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  • Computer analysis on the static negative resistance due to the geometrical effect of a GaAs bulk element

    Publication Year: 1972, Page(s):1299 - 1300
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (288 KB)

    Results of computer analysis on the static negative resistance of a GaAs bulk element with a geometrical effect are presented. It is shown that a static negative resistance appears across an overcritically doped GaAs element with a geometry of expanding cross section toward the anode as a result of the development of a stationary high-field domain at the expanding part of the element. These result... View full abstract»

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  • [Back cover]

    Publication Year: 1972, Page(s): c4
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    Freely Available from IEEE

Aims & Scope

IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects.

 

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Editor-in-Chief

Giovanni Ghione
Politecnico di Torino,
10129 Torino, Italy

Phone +39 011 090 4064
email giovanni.ghione@polito.it