IEEE Transactions on Electron Devices

Issue 11 • Nov. 1972

Filter Results

Displaying Results 1 - 21 of 21
  • [Front cover and table of contents]

    Publication Year: 1972, Page(s): c1
    Request permission for commercial reuse | PDF file iconPDF (752 KB)
    Freely Available from IEEE
  • Sheet resistivity measurements of thin-film resistive overlays on silicon diode array camera tube targets

    Publication Year: 1972, Page(s):1139 - 1143
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (488 KB)

    A new technique has been developed to measure the sheet resistivity of the silicon diode array target resistive overlay in a completed camera tube. The technique measures the sheet resistivity by determining the voltage profile on the oxide area surrounding the diode array area. The oxide voltage profile is set up by charge spreading out from the oxide to the diode array area. This "charge spreadi... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • A practical technique for controlling field profile in thin layers of n-GaAs

    Publication Year: 1972, Page(s):1144 - 1148
    Cited by:  Papers (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (576 KB)

    A practical technique has been developed for controlling the field profile in a thin epitaxial layer of n-GaAs biased above the transferred-electron threshold. This employs a special cathode composed of an electron-injecting n+contact complemented by an electron-blocking (reverse-biased Schottky barrier) contact, which extends a selected distance past the n+contact. The situa... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Reflection amplification in thin layers of n-GaAs

    Publication Year: 1972, Page(s):1148 - 1156
    Cited by:  Papers (5)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (952 KB)

    Theoretical expressions are developed for the stability criterion and admittance of a thin coplanar GaAs reflection amplifier. The traveling-wave dispersion relation includes diffusion. The cathode boundary condition includes velocity modulation, injection, and distributed inhomogeneity effects. The admittance includes displacement currents running outside the semiconducting layer. The results sho... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • A unified small-signal theory of uniform-carrier-velocity semiconductor transit-time diodes

    Publication Year: 1972, Page(s):1156 - 1166
    Cited by:  Papers (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (928 KB)

    Assuming a uniform carrier velocity, a unified small-signal description can approximate the behavior of divers transit-time diodes. Application is made to diodes with optimized conductive cathodes. A comparison of the "diffusion" noise behavior of saturated-and unsaturated-velocity diodes is made. For similar material parameters, the latter is better. However, using holes in silicon in the first i... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Resistance of narrow diffused layers

    Publication Year: 1972, Page(s):1166 - 1171
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (528 KB)

    The resistance evaluation of very narrow diffused layers is described. A two-dimensional analysis of the diffused layer conductance has been made using a numerical technique. A substantial reduction of the effective sheet resistance is shown to occur when the width of a diffusion mask window is narrowed relative to the junction depth. This indicates that the conductance of such narrow layers is in... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Peripheral and diffused layer effects on doping profiles

    Publication Year: 1972, Page(s):1171 - 1178
    Cited by:  Papers (4)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (777 KB)

    The impurity profile of an epitaxial layer has been determined from the capacitance-voltage (C-V) characteristics of a diffused p-n junction. TheC-Vcharacteristics were corrected for peripheral and diffused layer effects. Peripheral capacitance corrections account for the lateral spread of the space-charge region, whose periphery is assumed to be cylindrical. Diffused layer c... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • A flame sensor with uniform sensitivity over a large field of view

    Publication Year: 1972, Page(s):1178 - 1180
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (336 KB)

    The sensor is a gas-filled tube of the Geiger-Mueller type, in which an electron emitted from a photocathode is accelerated by an applied electric field to cause ionization of the fill gas. Although the operating principle is not new, this tube differs from others in that the cathode consists of a semitransparent layer of metal on the inside of the cylindrical tube envelope, which is applied by sp... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • The avalanche photodiode as an electronic mixer in an optical receiver

    Publication Year: 1972, Page(s):1181 - 1190
    Cited by:  Papers (6)  |  Patents (5)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (824 KB)

    A new optical receiving system is described, which can improve the SNR when a very wide range of high-frequency signals is to be detected. It uses an avalanche photodiode both as an optical detector and as an electronic mixer. A theory is presented whereby mixer conversion losses and noise performance can be calculated. The results of a number of calculations for typical diodes are presented. Meas... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Monte Carlo calculation and measurement of shot-noise reduction factor

    Publication Year: 1972, Page(s):1190 - 1198
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (945 KB)

    The frequency characteristic of the shot-noise reduction factor (R2) of the "O"-type diode is investigated by three methods: the first is a Monte Carlo calculation following the approach of Tien and Moshman and changing the pseudorandom numbers; the second is a computer simulation of the reduction of the modulated electrons at the potential minimum; and the third is the exper... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Shielded silicon gate complementary MOS integrated circuit

    Publication Year: 1972, Page(s):1199 - 1207
    Cited by:  Papers (9)  |  Patents (10)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1075 KB)

    An electrostatic shield for complementary MOS integrated circuits was developed to minimize the adverse effects of stray electric fields created by the potentials in the metal interconnections. The process is compatible with silicon gate technology. n-doped polycrystalline silicon was used for all the gates and the shield. The effectiveness of the shield was demonstrated by constructing a special ... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Design considerations of step recovery diodes with the aid of numerical large-signal analysis

    Publication Year: 1972, Page(s):1207 - 1215
    Cited by:  Papers (7)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (912 KB)

    Switching behavior of the step recovery diode (SRD) is studied through exact large-signal analysis. Two numerical methods are presented. One is suitable for steady-state and slow-transient calculations, while the other is based on a principle given by Scharfetter and Gummel, being appropriate for fast-transient calculation. Criteria for each method are described in terms of space and time interval... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Admittance of a forward-biased P-N+junction diode

    Publication Year: 1972, Page(s):1215 - 1219
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (344 KB)

    Numerical solutions of the basic semiconductor transport equations are used to analyze the ac behavior of a forward-biased diode. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Ion implantation combined with silicon-gate technology

    Publication Year: 1972, Page(s):1219 - 1221
    Cited by:  Papers (2)  |  Patents (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (304 KB)

    Ion implantation has been combined with silicon-gate technology for the fabrication of MOS integrated circuits that possess the principal advantages afforded by each technique. This process is essentially a standard silicon-gate process to which a single masking step and an ion-implantation step have been added in order to provide the depletion-mode devices. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Elimination of integration truncation errors in electron ray calculations

    Publication Year: 1972, Page(s):1221 - 1222
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (226 KB)

    A method for the computation of electron trajectories in arbitrary static electromagnetic fields, which eliminates a major source of error, is given. Under certain conditions the equations of motion are shown to yield analytic solutions that are expressible in terms of the matrix exponential function exp (At). View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • The deflection sensitivity of traveling-wave electron-beam deflection structures

    Publication Year: 1972, Page(s):1222 - 1224
    Cited by:  Papers (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (344 KB)

    A combination experimental-analytical method for easily determining the frequency-dependent deflection sensitivity of traveling-wave deflection structures is described. Experimental measurements have been made to verify the accuracy of the proposed method. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Comments on "Measurement of emitter and collector series resistances"

    Publication Year: 1972, Page(s): 1224
    Cited by:  Papers (2)
    Request permission for commercial reuse | PDF file iconPDF (108 KB)
    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Author's reply

    Publication Year: 1972, Page(s): 1225
    Request permission for commercial reuse | PDF file iconPDF (135 KB)
    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Comments on "High frequency breakdown in diffused transistors"

    Publication Year: 1972, Page(s): 1225
    Request permission for commercial reuse | PDF file iconPDF (135 KB)
    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Buildup of oscillations in crossed-field backward-wave oscillators

    Publication Year: 1972, Page(s):1225 - 1226
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (216 KB)

    Coupled-mode description of the interaction process in crossed-field backward-wave oscillators is used to derive the oscillation condition and the spatial variation of wave amplitudes during buildup of oscillations. Numerical results for the rate of increase of the mode amplitudes and their spatial dependence for typical operating conditions are obtained. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • [Back cover]

    Publication Year: 1972, Page(s): c4
    Request permission for commercial reuse | PDF file iconPDF (828 KB)
    Freely Available from IEEE

Aims & Scope

IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects.

 

Full Aims & Scope

Meet Our Editors

Editor-in-Chief

Giovanni Ghione
Politecnico di Torino,
10129 Torino, Italy

Phone +39 011 090 4064
email giovanni.ghione@polito.it