By Topic

IEEE Transactions on Electron Devices

Issue 10 • Date Oct. 1972

Filter Results

Displaying Results 1 - 13 of 13
  • [Front cover and table of contents]

    Publication Year: 1972, Page(s): c1
    Request permission for commercial reuse | PDF file iconPDF (643 KB)
    Freely Available from IEEE
  • Analysis of a range of symmetrical three-aperture electrostatic lenses

    Publication Year: 1972, Page(s):1075 - 1084
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (696 KB)

    The three-aperture electrostatic lens was investigated in great detail. The potential along the axis was obtained using the relaxation technique. The cardinal points and coefficients of spherical and chromatic aberration were numerically calculated from the axial potential distribution using the classical Scherzer and Glaser formulas. The results are given for a range of lenses and for a series of... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Differential amplification magnetic sensor

    Publication Year: 1972, Page(s):1085 - 1090
    Cited by:  Papers (15)  |  Patents (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (648 KB)

    The differential amplification magnetic sensor (DAMS) comprises a rectangular Hall device and two transistors. These three elements are not only integrated as a monolithic IC, but are also made smaller by using the Hall region as the common base of the transistors, the collectors of which are used to isolate the Hall region from the substrate. Relations between electromagnetic characteristics of t... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Electrofax®printing with gallium phosphide diodes

    Publication Year: 1972, Page(s):1090 - 1093
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (488 KB)

    Experimental green-light-emitting GaP diodes are shown to be capable of adequately exposing Electrofax®paper with exposures of 400 µs. The diodes used were prepared from nitrogen-doped epitaxial junction material; the Electrofax paper was sensitized with a rose-bengal dye. Linear arrays of seven diodes spaced 250 µm apart have been constructed and used to print characters... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Gallium phosphide monolithic display with low drive power

    Publication Year: 1972, Page(s):1093 - 1097
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (656 KB)

    A gallium phosphide monolithic numeric display with seven segments has been developed by a mesa-etching technique. Internal absorption of red emission is small so that optical isolation is very difficult in monolithic-type displays. This obstacle has been overcome by sufficiently deep mesa-etching in hot aqua regia, using a stable SiO2film as a mask. Luminance and optical isolation of s... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Mapping of electrical leakage in transistors by anodic oxidation

    Publication Year: 1972, Page(s):1098 - 1102
    Cited by:  Papers (4)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (664 KB)

    Recently developed electrochemical methods permit the optical mapping of large and small bipolar transistors in an integrated circuit for electrical leakage before metallization. In one methods the emitters of the leaky transistors are decorated by a deposit of amorphous silicon produced as a result of anodic dissolution of the n+silicon in that region. Other methods depend on the color... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • A feedback method for investigating carrier distributions in semiconductors

    Publication Year: 1972, Page(s):1103 - 1108
    Cited by:  Papers (12)  |  Patents (4)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (640 KB)

    The capacitance-voltage relationships of abrupt reverse-biased p-n junctions have long been used to investigate semiconductor doping distributions. Such investigations usually employ accurate point by point C-V measurements or else RF harmonic generation to provide the required detailed connection between a small change in junction voltage and the associated ... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • On the microwave activity of punchthrough injection transit-time structures

    Publication Year: 1972, Page(s):1109 - 1118
    Cited by:  Papers (20)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1144 KB)

    The microwave properties of punchthrough injection diodes exhibiting transit-time dependent negative resistances have been investigated experimentally in both the small- and large-signal regimes. The particular devices involved were p+-n-p+, M-n-p+, and p+-ν-n-p+silicon structures. Extensive small-signal admittance measurements indicated ... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Properties of an idealized traveling-wave charge-coupled device

    Publication Year: 1972, Page(s):1119 - 1130
    Cited by:  Papers (14)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1352 KB)

    In order to ascertain the operating capabilities and drive requirements of the charge-coupled device (CCD), it has been analyzed as a sinusoidal traveling-wave device. From this model, it has been possible to show the drive requirements and the lower bound to power dissipated in the substrate of an operating CCD. Signal loss in the sinusoidal model is due solely to surface-state effects, and varie... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • A CW Gunn diode bistable switching element

    Publication Year: 1972, Page(s):1130 - 1131
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (272 KB)

    Experiments with a current-controlled bistable switching element using a CW Gunn diode are reported. Switching rates of the order of 10 MHz have been obtained. Switching is initiated by current pulses of short duration (5-10 ns). Rise times of the order of several nanoseconds could be obtained. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Small-signal admittance of BARITT diodes

    Publication Year: 1972, Page(s):1131 - 1133
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (328 KB)

    Small-signal admittance and phasor diagrams for metal-semiconductor-metal microwave oscillator diodes (BARITT diodes) were calculated by taking previously neglected carrier diffusion and field dependence of carrier velocity into account. It was shown that the microwave performance greatly degrades with an increase of dc current density and of oscillation frequency. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Tunable phototransducers using a ZnSe-Si isotype heterojunction

    Publication Year: 1972, Page(s):1133 - 1134
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (208 KB)

    A new phototransducer using n-n ZnSe-Si isotype heterojunction photodiodes is presented. The phototransducer detects incident light signals of different wavelengths by proper adjustment of bias voltages across the heterojunction, and also discriminates between simultaneous light signals of different wavelengths. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • [Back cover]

    Publication Year: 1972, Page(s): c4
    Request permission for commercial reuse | PDF file iconPDF (838 KB)
    Freely Available from IEEE

Aims & Scope

IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects.

 

Full Aims & Scope

Meet Our Editors

Editor-in-Chief

Giovanni Ghione
Politecnico di Torino,
10129 Torino, Italy

Phone +39 011 090 4064
email giovanni.ghione@polito.it