IEEE Transactions on Electron Devices

Issue 9 • Sept. 1972

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Displaying Results 1 - 16 of 16
  • [Front cover and table of contents]

    Publication Year: 1972, Page(s): c1
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    Freely Available from IEEE
  • The Ruticon family of erasable image recording devices

    Publication Year: 1972, Page(s):1003 - 1010
    Cited by:  Papers (13)  |  Patents (6)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1064 KB)

    Ruticons are solid-state cyclic image recording devices. They have a layered structure consisting of a conductive transparent substrate, a thin photoconductive layer a thin deformable elastomer layer, and a deformable electrode such as a conductive liquid, a conductive gas, or a thin flexible metal layer. When an electric field is placed between the conductive substrate and the deformable electrod... View full abstract»

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  • Electron bunching and output gap interaction in broad-band klystrons

    Publication Year: 1972, Page(s):1011 - 1017
    Cited by:  Papers (8)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (848 KB)

    Broad-band klystron operation is investigated using a large-signal digital computer simulation of electron bunching and output gap interaction. Electron bunching is examined as a function of beam voltage and perveance for a prototype series of klystrons. The development of a low energy "spur" of electrons is shown to limit efficiency at high perveance, particularly at the high band edge. The outpu... View full abstract»

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  • Bulk and optical generation parameters measured with the pulsed MOS capacitor

    Publication Year: 1972, Page(s):1018 - 1023
    Cited by:  Papers (6)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (563 KB)

    Theory and experiments are presented for the pulsed MOS capacitor when carrier generation is constant. This condition obtains when quasi-neutral bulk-region generation dominates over that in the space-charge region or when generation is due to an external excitation mechanism. It is shown how the diffusion length, surface generation velocity, and external flux can be obtained from the pulsedC... View full abstract»

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  • Short-circuit current in silicon solar cells—Dependence on cell parameters

    Publication Year: 1972, Page(s):1024 - 1028
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (440 KB)

    An analytical expression relating the short-circuit current of an n-p silicon solar cell under AM0 illumination to the minority carrier diffusion length of the base region has been derived and compared with previous and new experimental data. The dependence of the short-circuit current upon other solar cell parameters has also been determined analytically. Finally, in the course of systematically ... View full abstract»

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  • A nonlinear lumped network model of semiconductor devices with consideration of recombination kinetics

    Publication Year: 1972, Page(s):1028 - 1037
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (784 KB)

    A nonlinear lumped network model of semiconductor devices with consideration of recombination kinetics is developed. A distributed system, based on a set of recombination kinetic equations for the multiple energy level centers, in addition to continuity, current flow relationships, and Poisson's equation, is shown to be approximated by a lumped RC network. As an example of application, the forward... View full abstract»

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  • Synthesis of general impurity profiles using a two-step diffusion process

    Publication Year: 1972, Page(s):1037 - 1043
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (648 KB)

    By optimizing selected characteristics, the performance of modern semiconductor devices and integrated circuits could be improved if it were possible to control the impurity profile in given regions of the material. However, present methods used for fabricating planar devices by diffusion techniques invariably produce profiles which are approximately either Gaussian or complementary error function... View full abstract»

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  • Experimentally observed admittance properties of the semiconductor—Insulator—Semiconductor (SIS) diode

    Publication Year: 1972, Page(s):1044 - 1050
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (784 KB)

    The admittance properties of a new type of semiconductor diode, the SIS (semiconductor-insulator-semiconductor) device, have been investigated experimentally. A fabrication technique is described which enables the necessary sandwich structure of two semiconductors (preferably single crystal), separated by a dielectric layer, to be obtained. The capacitance-voltage and conductance-voltage curves fo... View full abstract»

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  • Some tuning characteristics and oscillation conditions of a waveguide-mounted transferred-electron diode oscillator

    Publication Year: 1972, Page(s):1050 - 1055
    Cited by:  Papers (13)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (656 KB)

    Several tuning characteristics of waveguide-mounted transferred-electron diode oscillators, previously observed experimentally, are discussed, Frequency tuning, jumping, and saturation along with output power variation and jumping, are related to the mounting and device parameters. Two oscillation conditions relating to multifrequency resonant circuits and oscillator power output are cited to expl... View full abstract»

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  • Triggering phenomena in avalanche diodes

    Publication Year: 1972, Page(s):1056 - 1060
    Cited by:  Papers (119)  |  Patents (4)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (568 KB)

    The operation of a small area p-n junction diode above the breakdown voltage is analyzed. A new formulation in terms of ionization probability is used to derive the rate of turn-on of current in such structures. Two differential equations are given which may be used to compute the probability that a carrier swept into or generated within the space-charge region triggers avalanche breakdown. For a ... View full abstract»

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  • Effect of magnetic field on the performance of millimeter-wave detectors using bulk InSb

    Publication Year: 1972, Page(s):1061 - 1063
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (512 KB)

    The performance of microwave-biased millimeter-wave detectors using bulk InSb in the presence of a magnetic field is described. Broad-band transitions between the impurity and conduction bands together with free-carrier absorption are responsible for the detection mechanism. The performance of the device is examined as a function of the magnetic field, millimeter-wave signal, and microwave bias le... View full abstract»

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  • Noise temperature variation with mount style

    Publication Year: 1972, Page(s):1063 - 1065
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (552 KB)

    Noise temperatures in argon discharges at 1-20 torr in 0.63-cm inner radius tubes are presented. The noise temperatures measured at 147 MHz were dependent upon the noise-extracting electrode arrangements; this dependence resulted from a radial noise temperature variation within the discharges. The radial variation is expected to cause a frequency dependence in the microwave region. View full abstract»

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  • Comments on "Voltage-controlled crystal oscillators"

    Publication Year: 1972, Page(s):1065 - 1066
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  • Author's reply

    Publication Year: 1972, Page(s):1066 - 1067
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  • Efficient 1.06-µm emission from InxGa1-xAs electroluminescent diodes

    Publication Year: 1972, Page(s):1067 - 1069
    Cited by:  Papers (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (344 KB)

    Vapor-grown p-n junctions of InxGa1-xAs have been prepared that emit near-bandgap infrared radiation at 1.06 µm with an external quantum efficiency in excess of 1 percent at room temperature. These diodes have an electroluminescence response time of 20 ns. In addition, InxGa1-xAs injection lasers have been fabricated with threshold current densities... View full abstract»

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  • [Back cover]

    Publication Year: 1972, Page(s): c4
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    Freely Available from IEEE

Aims & Scope

IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects.

 

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Giovanni Ghione
Politecnico di Torino,
10129 Torino, Italy

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