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Electron Devices, IEEE Transactions on

Issue 7 • Date July 1972

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Displaying Results 1 - 10 of 10
  • [Front cover and table of contents]

    Publication Year: 1972 , Page(s): c1
    Save to Project icon | Request Permissions | PDF file iconPDF (227 KB)  
    Freely Available from IEEE
  • Electrothermal considerations in display applications of light-emitting diodes

    Publication Year: 1972 , Page(s): 847 - 851
    Cited by:  Patents (10)
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (544 KB)  

    Some of the possibilities and problems of high-density integration and packaging of light-emitting diode displays are explored, using a new electrothermal characterization of light-emitting diodes. After a brief discussion of thermal effects in spontaneous light-emitting diodes, the characterization is derived. It reveals a peak in luminance with increasing electric power due to self heating. Expe... View full abstract»

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  • Performance limitations of the IGFET bucket-brigade shift register

    Publication Year: 1972 , Page(s): 852 - 860
    Cited by:  Papers (21)  |  Patents (3)
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (1152 KB)  

    The IGFET bucket brigade in integrated circuit form is a particularly simple structure for implementing dynamic charge transfer shift registers. Experimental and analytical studies show that incomplete charge transfer is an important limitation of register performance leading to signal degradation. This sets an upper limit to the clock frequency and to the number of stages in the register. The eff... View full abstract»

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  • Redistribution of boron and phosphorous in silicon after two oxidation steps used in MOST fabrication

    Publication Year: 1972 , Page(s): 861 - 868
    Cited by:  Papers (3)
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (696 KB)  

    Redistribution of boron and phosphorous impurities in silicon resulting from two consecutive oxidation steps is calculated by using either the method of Green's function or by separating the redistribution after the first oxidation into a constant and error function term. An approximate but analytical solution for redistribution after the second oxidation is then obtainable. Employing a variety of... View full abstract»

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  • A linear-sweep MOS-C technique for determining minority carrier lifetimes

    Publication Year: 1972 , Page(s): 869 - 873
    Cited by:  Papers (15)
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (488 KB)  

    A nonpulse MOS-C τ0measurement procedure, based upon the capacitance-voltage characteristics derived in response to a linear voltage sweep initiated and maintained under inversion biases, is described, analyzed, and illustrated. The most significant advantages of the procedure are interpretational and instrumentational simplicity. For typical dopings and oxide thicknesses, the conv... View full abstract»

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  • Second-breakdown phenomena in avalanching silicon-on-sapphire diodes

    Publication Year: 1972 , Page(s): 873 - 885
    Cited by:  Papers (12)  |  Patents (1)
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (2336 KB)  

    A new experimental technique, based on local temperature-induced changes in optical absorption, is used to study second breakdown in avalanching reverse-biased silicon-on-sapphire diodes. The technique allows spatial resolution down to 1 µm and temperature resolution of a few degrees Celsius. Further, used stroboscopically, the technique allows time resolution on the order of nanoseconds. The... View full abstract»

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  • Radial and axial RF current and velocity distributions in large-signal velocity-modulated electron beams

    Publication Year: 1972 , Page(s): 886 - 890
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (520 KB)  

    Measurements of the amplitude and the phase of the current density in a Brillouin beam modulated at large signal levels were made at 1940 MHz and at harmonics of 1940 MHz as a function of the amplitude of the modulating signal. In addition to a surface current similar to that reported for small-signal Brillouin beams, current existed along the axis of the beam that was very large and often 180... View full abstract»

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  • Multilayer vapor-phase epitaxial silicon millimeter-wave IMPATT diodes

    Publication Year: 1972 , Page(s): 891 - 893
    Cited by:  Papers (5)
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (320 KB)  

    A new procedure has been developed for fabricating small-area silicon avalanche diodes directly on a plated copper heat sink. The process incorporates multilayer vapor-phase epitaxially grown silicon and a preferential electrochemical etching technique to fabricate thin uniform silicon films; 6 µ thick films on 2-cm diameter wafers have been obtained reproducibly with little difficulty. Inver... View full abstract»

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  • Sensitivity measurement of a 10.6-µm parametric upconverter

    Publication Year: 1972 , Page(s): 894
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (152 KB)  

    The sensitivity of a parametric upconverter for the detection of 10.6-µm radiation was measured. 10.6-µm radiation was mixed with the 1.06 µm beam of an Nd :YAG laser in properly oriented single-crystal proustite. The upconverted output at 0.967 µm was then detected by an S-1 photomultiplier tube. NEP of 1.1×10-9W . s½was measured. View full abstract»

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  • [Back cover]

    Publication Year: 1972 , Page(s): c4
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    Freely Available from IEEE

Aims & Scope

IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects.

 

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Acting Editor-in-Chief

Dr. Paul K.-L. Yu

Dept. ECE
University of California San Diego