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IEEE Transactions on Electron Devices

Issue 6 • June 1972

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Displaying Results 1 - 23 of 23
  • [Front cover and table of contents]

    Publication Year: 1972, Page(s): c1
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    Freely Available from IEEE
  • The distribution of gains in uniformly multiplying avalanche photodiodes: Theory

    Publication Year: 1972, Page(s):703 - 713
    Cited by:  Papers (285)  |  Patents (9)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (953 KB)

    Expressions are derived for the probabilityP_{n,m}that a pulse initiated bynelectrons (or holes) in a uniformly multiplying semiconductor diode will result in a total number of electrons (or holes)m, to give a gainm/n, and for the probabilityQ_{n,m}that the gain will bem/nor greater. It is shown that the distributions are far from G... View full abstract»

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  • The distribution of gains in uniformly multiplying avalanche photodiodes: Experimental

    Publication Year: 1972, Page(s):713 - 718
    Cited by:  Papers (89)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (488 KB)

    Experimental measurements of the gain distribution and noise spectral density of silicon avalanche photodiodes are presented and compared with McIntyre's theories [7], [8]. Excellent agreement is obtained using keff, the effective ratio of the hole and electron ionization coefficients, as the only adjustable parameter. View full abstract»

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  • Modeling of bipolar transistor using integral charge-control model with application to third-order distortion studies

    Publication Year: 1972, Page(s):719 - 731
    Cited by:  Papers (23)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1272 KB)

    A compact bipolar transistor model [integral charge-control model (ICM)] has recently been developed that intrinsically includes many high-level effects (for example, conductivity modulation, base push-out effect, Early effect, and impact ionization). This paper presents a detailed characterization of a high-frequency silicon bipolar transistor using the ICM, with sufficient accuracy to allow calc... View full abstract»

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  • Electrostatic deflection yokes

    Publication Year: 1972, Page(s):731 - 745
    Cited by:  Papers (2)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1136 KB)

    A number of specific examples of a certain class of electrostatic deflection yokes, here called pattern yokes, have been described in the literature by Gray [1] and Schlesinger [2]. In this paper a theoretical procedure is presented that permits the determination of the potential distribution as well as the deflecting properties of these yokes. The method is illustrated on Schlesinger's curved-arr... View full abstract»

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  • Analysis of a 100-GHz double-drift IMPATT oscillator

    Publication Year: 1972, Page(s):746 - 752
    Cited by:  Papers (4)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (528 KB)

    The purpose of this paper is to analyze and characterize in some detail a 100-GHz double-drift IMPATT oscillator. The small-signal and large-signal behavior of the diode has been analyzed using a semiconductor-analysis computer program. It is suggested that previously reported experimental results have been achieved with the aid of second-harmonic tuning and that 150-GHz single-frequency operation... View full abstract»

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  • Characterization of IMPATT diodes at millimeter-wave frequencies

    Publication Year: 1972, Page(s):752 - 757
    Cited by:  Papers (5)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (641 KB)

    In order to evaluate the quality of a microwave device and to design a suitable circuit for it, the device must be characterized in terms of an equivalent circuit. At low microwave frequencies L through X bands, devices can be characterized in a relatively simple manner in conjunction with a coaxial transmission line network analyzer. At higher frequencies, such as millimeter-wave frequencies, how... View full abstract»

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  • DC temperature and field profiles in TRAPATT diode structures

    Publication Year: 1972, Page(s):757 - 760
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (376 KB)

    Temperature and electric field profiles are considered for TRAPATT structures in the nonoscillatory state. Two specific device structures (1 and 6 GHz) are compared and their geometrical limitations on diamond heat sinks are shown to be similar. The effects of space charge and large temperature drops across the active layer are also considered. View full abstract»

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  • PSG masks for diffusions in gallium arsenide

    Publication Year: 1972, Page(s):761 - 764
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (376 KB)

    This paper describes the use of phosphosilicate glass (PSG) films as an effective mask against zinc and tin diffusions in gallium arsenide. It is shown that films with a high phosphorus pentoxide content (as much as 30 percent by weight) can be used to obtain adequate crack-free masks against these dopants. Effective masking was obtained for diffusion depths (unmasked regions) up to 10 µ. View full abstract»

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  • Lumped-circuit representation of Gunn diodes in domain mode

    Publication Year: 1972, Page(s):765 - 770
    Cited by:  Papers (7)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (600 KB)

    It is shown that the lumped circuit that has been used to date to represent a Gunn diode with a steadily propagating domain cannot and does not properly account for the transient, and therefore, high-frequency behavior of a Gunn diode. We have derived the nodal equations that must be obeyed by any circuit that is to represent a Gunn diode with a steadily propagating domain under all conditions --s... View full abstract»

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  • The application of the analytic theory of continued fractions to the study of wave interactions

    Publication Year: 1972, Page(s):771 - 773
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (248 KB)

    The analytic theory of continued fractions is used to find the zeros of a complex polynomial representing a wave interaction dispersion equation. This method reveals new insight in studying these problems and may be programmed for the digital computer. View full abstract»

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  • An injection level dependent theory of the MOS transistor in saturation

    Publication Year: 1972, Page(s):774 - 781
    Cited by:  Papers (8)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (704 KB)

    A qualitative and quantitative theory of the MOS transistor in saturation is developed, taking into account the fact that the carrier concentration in the drain region is not negligible. With reference to the behavior in saturation, an injection level is defined. This level is directly related to two parameters: the drain saturation field EDSand the effective depth of the drain region x... View full abstract»

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  • Computer-aided design of an axially symmetrical magnetic circuit and its application to electron-beam-focusing devices

    Publication Year: 1972, Page(s):782 - 797
    Cited by:  Papers (9)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1368 KB)

    This paper presents a method of computer simulation useful for analysis of an axially symmetrical magnetic circuit with exciting coils, magnetic poles, and permanent magnets. The vector magnetic potential is obtained by the use of the well-known successive over-relaxation method, so that devices having magnetic hysteresis characteristics can be analyzed easily and accurately. In this program, the ... View full abstract»

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  • Free charge transfer in charge-coupled devices

    Publication Year: 1972, Page(s):798 - 808
    Cited by:  Papers (51)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (904 KB)

    The free charge-transfer characteristics of charge-coupled devices (CCD's) are analyzed in terms of the charge motion due to thermal diffusion, self-induced drift, and fringing field drift. The charge-coupled structures considered have separations between the gates equal to the thickness of the channel oxide. The effect of each of the above mechanisms on charge transfer is first considered separat... View full abstract»

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  • Simplified computer-aided analysis of double-diffused transistors including two-dimensional high-level effects

    Publication Year: 1972, Page(s):809 - 820
    Cited by:  Papers (28)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1112 KB)

    An approximate two-dimensional numerical analysis has been developed for studying double- (or triple-) diffused transistors. The program supplies dc and hf terminal characteristics (e.g., hfe, rbb, fT, IB, VBE) over a wide range of operating collector currents and voltages for a given set of physical device parameters (mask dimensions, impurit... View full abstract»

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  • Pulse investigation of switching delays in VO2coplanar devices

    Publication Year: 1972, Page(s):820 - 825
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (576 KB)

    The purpose of this paper is to show that switching delay times of a few microseconds can be obtained in VO2coplanar threshold devices. The investigation of the influence of different parameters (pulse height and pulse width, pulse rate, ambient temperature) on the delay time and the recovery time underlines the features of the thermal switching phenomenon: decrease in the delay time wh... View full abstract»

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  • Properties of MNOS structures

    Publication Year: 1972, Page(s):826 - 836
    Cited by:  Papers (116)  |  Patents (12)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1040 KB)

    The properties of thin oxide MNOS structures are studied. An analytical theory for the switching time constant is derived and curves of the switching time constant versus the nitride field are computed. These curves are useful in the design of MNOS-memory transistors. The theory is compared with experiments. The normal current in the thin oxide MNOS structures is assumed to be a modified Fowler-No... View full abstract»

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  • Trapped plasma oscillations in unipolar semiconductor structures

    Publication Year: 1972, Page(s):836 - 838
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (326 KB)

    Based on the results of a large-signal computer simulation, a trapped plasma mode of oscillation is described in an n+-n-n+ silicon structure. The mechanism is similar to TRAPATT in many ways, but relies upon space-charge injection of majority carriers rather than a depletion region for the necessary initial electric field profile. A necessary design criteria ofN_{d}L < 10^{12}cm... View full abstract»

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  • Low-voltage electron-beam-pumped lasing of CdS at atmospheric pressure

    Publication Year: 1972, Page(s):838 - 839
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (248 KB)

    Lasing has been observed in CdS crystals in air at atmospheric pressure and at room temperature. The crystals were pumped with pulsed 20-kV electrons through a vacuum-tight, electron-permeable nickel film. Voltage threshold for lasing is reached for a 13-kV electron beam incident on the film and is about the same for the crystals in vacuum or air. Laser life at 20 kV is also the same for the two e... View full abstract»

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  • Effect of aluminum linewidth on the annealing of fast states in MOS structures

    Publication Year: 1972, Page(s):839 - 840
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (304 KB)

    Empirical data are presented showing that the effect of aluminum in the annealing of fast states in MOS structures is dependent on the linewidth of the aluminum. The density of fast states under 0.2-mil-wide aluminum is found to be essentially the same as that in regions not covered by aluminum. View full abstract»

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  • Comments on "Microchannel plate inverter image intensifiers"

    Publication Year: 1972, Page(s): 840
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  • Authors' reply

    Publication Year: 1972, Page(s): 840
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  • [Back cover]

    Publication Year: 1972, Page(s): c4
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    Freely Available from IEEE

Aims & Scope

IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects.

 

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Editor-in-Chief

Giovanni Ghione
Politecnico di Torino,
10129 Torino, Italy

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email giovanni.ghione@polito.it