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IEEE Transactions on Electron Devices

Issue 3 • March 1972

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Displaying Results 1 - 15 of 15
  • [Front cover and table of contents]

    Publication Year: 1972, Page(s): c1
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    Freely Available from IEEE
  • An expression of gratitude to our reviewers

    Publication Year: 1972, Page(s):303 - 307
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  • Xenon flashlamp triggering for laser applications

    Publication Year: 1972, Page(s):308 - 314
    Cited by:  Papers (5)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (840 KB)

    Results of an investigation into the triggering of linear xenon flashlamps are presented, with particular reference to xenon flashlamps in laser applications. Measurements are described which give information on the arc formation process, trigger voltage thresholds, peak trigger currents, lamp energy output stability, and electromagnetic interference (EMI) for both series and parallel triggering. ... View full abstract»

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  • Threshold voltages of normally off MESFET's

    Publication Year: 1972, Page(s):314 - 322
    Cited by:  Papers (15)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (815 KB)

    The threshold voltage of "normally off" Si-MESFET's for simple dc-coupled circuits is defined and computed with a two-dimensional device model, taking into account carrier velocity saturation and diffusion. The influence of the main parameters, gate length, conducting-layer thickness, and doping is investigated outside the range of Shockley's equations. A threshold voltage of a MESFET with a 1-... View full abstract»

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  • Effects of the induced magnetic field on the magnetohydrodynamic channel flow

    Publication Year: 1972, Page(s):322 - 331
    Cited by:  Papers (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (746 KB)

    The effects of a nonuniform magnetic field on magnetohydrodynamic (MHD) channel flow between two parallel plates of infinite extent are investigated. Influence of the induced magnetic field, such that the magnetic Reynolds number is less than unity but greater than zero, is included. The goal is to use the MHD effects to reduce the amount of heat transfer from the fluid to the channel walls. Expre... View full abstract»

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  • On the study of metal—Semiconductor contacts

    Publication Year: 1972, Page(s):331 - 338
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (968 KB)

    An iterative error-minimizing multiparameter computer technique is used to establish values for a six-parameter model of a metal-GaAs barrier based on measurements of temperature, current and the voltage split resulting from rectification at the contact. The most important feature of the technique is that it is not necessary to make assumptions regarding contact area, effective electron mass, and ... View full abstract»

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  • FET noise sources and their effects on amplifier performance at low frequencies

    Publication Year: 1972, Page(s):338 - 348
    Cited by:  Papers (10)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (938 KB)

    In this brief review paper analytical results concerning the low-frequency (LF) amplifier noise performance of FET's are presented. The effects of interaction between the device basic noise sources, the small-signal model parameters, and the signal source admittance parameters are clearly indicated. The noise performance is found to be essentially determined by the effective surface-state density ... View full abstract»

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  • Low-frequency current pulses in low-conductivity GaAs

    Publication Year: 1972, Page(s):349 - 354
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (976 KB)

    Properties of current pulses in low-conductivity planar bulk GaAs containing Cu and Fe were investigated, and the generation mechanism of the pulses are discussed. Both the amplitude and period of the current pulses depend upon the applied voltage. The pulse is strongly influenced by the illumination of specimens with light of a tungsten lamp. The period of the current pulses cannot be related to ... View full abstract»

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  • Gridistor development for the microwave power region

    Publication Year: 1972, Page(s):355 - 364
    Cited by:  Papers (12)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1248 KB)

    Multichannel junction-gate field-effect transistors and their advantages were introduced in 1964 under the name Gridistor. This included both vertical and horizontal channel structures. They were developed in order to combine in the same device the advantages of field-effect and bipolar transistors. The horizontal channel structure had performance which was quite useful in the power VHF band, but ... View full abstract»

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  • Simple analysis and computer simulation on lateral spreading of space charge in bulk GaAs

    Publication Year: 1972, Page(s):364 - 375
    Cited by:  Papers (8)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1112 KB)

    The growth of a space charge in bulk GaAs with a uniform doping profile but with a highly and three-dimensionally non-uniform electric field has been analyzed by introducing a concept of a "carrier current tube." From this analysis it has been shown how the behavior (i.e., growth or decay) of a small space charge depends upon the magnitude of an initial space charge, the nonuniformity of the field... View full abstract»

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  • Thin wire hall effect devices

    Publication Year: 1972, Page(s):375 - 381
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (583 KB)

    A thin wire inside a bulk semiconductor can concentrate the current density and the magnetic field strength to intensities that are significant for the Hall effect. Also, the self-magnetic field of the Hall currents can add to this intensification, particularly when there is axial symmetry and a toroidal configuration. The impedanceZiacross the ends of the wire is modified if a current<... View full abstract»

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  • Current-voltage characteristics of small size MOS transistors

    Publication Year: 1972, Page(s):382 - 383
    Cited by:  Papers (11)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (272 KB)

    One-dimensional analysis is used to find an upper and lower bound to the drain current of MOS transistors. The drain and source depletion regions and charge carrier velocity saturation are taken into account. These considerations are important in small devices. View full abstract»

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  • Adaptive ferroelectric transformers with improved temperature characteristics

    Publication Year: 1972, Page(s):383 - 384
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (312 KB)

    Adaptive ferroelectric transformers with significantly improved temperature characteristics are possible as a result of a new fabrication technique. A standard type transformer structure composed of two mechanically bonded parallel-plate ceramic ferroelectric capacitors is used but the structure is surface-mounted on a rigid substrate instead of being totally encapsulated in a casting compound. View full abstract»

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  • A new silicon vidicon with a CdTe—Si target

    Publication Year: 1972, Page(s):385 - 386
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (544 KB)

    A new type of a silicon vidicon target which utilizes blocking contacts between bulk semiconductor and a high resistive layer has been developed. The high resistive layer forms a blocking contact to the bulk and works also as a "resistive sea" layer, reducing complex fabrication processes. Structure of the target, tube characteristics, and video patterns are presented. View full abstract»

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  • [Back cover]

    Publication Year: 1972, Page(s): c4
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    Freely Available from IEEE

Aims & Scope

IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects.

 

Full Aims & Scope

Meet Our Editors

Editor-in-Chief

Giovanni Ghione
Politecnico di Torino,
10129 Torino, Italy

Phone +39 011 090 4064
email giovanni.ghione@polito.it