IEEE Transactions on Electron Devices

Issue 2 • Feb. 1972

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  • [Front cover and table of contents]

    Publication Year: 1972, Page(s): c1
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    Freely Available from IEEE
  • Additions to editorial board

    Publication Year: 1972, Page(s): 137
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (160 KB)

    First Page of the Article
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  • Determination of deep levels in semiconductors from C-V measurements

    Publication Year: 1972, Page(s):138 - 143
    Cited by:  Papers (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (502 KB)

    A method is presented that allows deep level density and energy of impurities in semiconductors to be routinely determined from simpleC-Vmeasurements of Schottky barriers. The method is particularly useful for material having levels with very long time constants that are not accessible by noise spectra measurements. The technique is illustrated by measurements of epitaxial n-GaAs which ... View full abstract»

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  • Representation of axisymmetric magnetic fields in computer programs

    Publication Year: 1972, Page(s):144 - 151
    Cited by:  Papers (27)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (768 KB)

    The standard expression for the off-axis fields in terms of the axial values and their differentials is examined. It is shown that if terms higher than the second are used, the accuracy becomes worse instead of better, unless the input data are mathematically perfect. It is not possible to remedy this by smoothing experimental data with a polynomial curve-fitting routine. Alternative expressions o... View full abstract»

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  • Theoretical analysis of heterojunction phototransistors

    Publication Year: 1972, Page(s):152 - 159
    Cited by:  Papers (11)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (700 KB)

    The optical gain and spectral response of heterojunction phototransistors with wide-gap emitters have been examined theoretically in idealized cases. The optical gain is found to be closely related to the current gain in the common-emitter configuration β of a heterojunction transistor. Because of Kroemer's factor, the injection efficiency of the emitter junction is very high, resulting in a ... View full abstract»

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  • Noise temperature data on low pressure argon discharges

    Publication Year: 1972, Page(s):160 - 163
    Cited by:  Papers (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (440 KB)

    Measured noise temperatures for argon discharges at pressures from 1 to 40 mmHg in tubes with 0.63-cm inner radius are presented. In general, the results agree with theoretical electron temperatures, but disagree with previously published data for similar pressure-radius products. It is suggested that similarity rules should be applied with caution. Large audio-frequency disturbances were found to... View full abstract»

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  • Noise factor contours for field-effect transistors at moderately high frequencies

    Publication Year: 1972, Page(s):164 - 171
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (580 KB)

    This analysis of noise behavior is based on an equivalent circuit for the junction field-effect transistor (FET) that was previously published [10]. Since all noise sources in this equivalent circuit are uncorrelated and all significant parasitic elements are already considered, one may apply an easy and direct calculation for the noise factor, which is carried out for the common source, common ga... View full abstract»

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  • Experiments concerning the nature of trapped-plasma mode harmonic extraction from P+-N-N+avalanche diodes

    Publication Year: 1972, Page(s):172 - 181
    Cited by:  Papers (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1150 KB)

    An experimental investigation has clarified the nature of both fundamental and harmonic extraction from p+-n-n+avalanche diodes operated in the trapped-plasma mode. A standard coaxial cavity was found to be suitable for low-order (nleq5) harmonic generation. Calculations revealed that the circuit behaved as a bandpass filter which allowed power to be extracted at a... View full abstract»

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  • A three mask bipolar integrated circuit structure

    Publication Year: 1972, Page(s):182 - 190
    Cited by:  Papers (3)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1251 KB)

    A new bipolar integrated circuit structure has been fabricated that compares favorably to the MOS structure in terms of fabrication simplicity and performance. The new structure is basically a modified isolated lateral transistor and requires only three photolithographic masking operations up to and including first level of metalization. The fabrication of the structure is as follows: a shallow no... View full abstract»

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  • Yield degradation of integrated circuits due to spot defects

    Publication Year: 1972, Page(s):190 - 197
    Cited by:  Papers (33)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (744 KB)

    Economy of integrated circuit fabrication in the presence of quasi-randomly distributed spot defects is described. The distribution of the defects is represented in terms of density and modeled as follows : 1) they are randomly distributed within a limited area; 2) the density in a wafer changes concentrically; and 3) the density is normally distributed from wafer to wafer with uniform deviation t... View full abstract»

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  • Effects of insulator thickness fluctuations on MNOS charge storage characteristics

    Publication Year: 1972, Page(s):198 - 204
    Cited by:  Papers (4)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (808 KB)

    The effects of insulator thickness fluctuations on the charge storage characteristics of MNOS direct tunneling devices were investigated, using capacitor structures carefully fabricated by depositing Si3N4layers on thermally grown SiO2films. The oxide films were thin enough (∼27 Å) for the electron transfer due to electrical pulsing to occur via direct t... View full abstract»

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  • A new type of traveling-wave deflection system

    Publication Year: 1972, Page(s):204 - 213
    Cited by:  Papers (4)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1056 KB)

    The analysis of the meander-line type of traveling-wave deflection system shows that the deficiency in the dispersion characteristics is due to the interaction of the electromagnetic field on a section of a finger with that on other fingers. Insertion of a shielding plate between two neighboring sections of the fingers reduces mutual interactions. The meander line with the shielding plate is calle... View full abstract»

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  • Subthreshold drain leakage currents in MOS field-effect transistors

    Publication Year: 1972, Page(s):213 - 219
    Cited by:  Papers (14)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (616 KB)

    There are two contributions to the drain-source leakage current in MOS field-effect transistors for gate voltages below the extrapolated threshold voltage (Vtx) : 1) reverse-bias drain junction leakage current, and 2) a surface channel current that flows when the surface is weakly inverted. Nearly six orders of magnitude of drain-source current from the background limit imposed by the d... View full abstract»

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  • Noise in IMPATT diodes: Intrinsic properties

    Publication Year: 1972, Page(s):220 - 233
    Cited by:  Papers (20)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1432 KB)

    The design of low-noise IMPATT diodes has been aided by theories describing the noise generation under small-signal conditions. A major deficiency in this procedure has existed in that there is no apparent connection between the small-signal behavior and the great increases in the noise observed in large-signal operation. As a remedy a theory has been developed for the noise generation at arbitrar... View full abstract»

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  • DC-controlled solid-state X-ray image converter

    Publication Year: 1972, Page(s):234 - 238
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (744 KB)

    A thin solid-state X-ray panel of sandwich-type structure using photoconductive (PC) and semiconducting electroluminescent (EL) powder layers has been developed. The PC layer and the semiconducting EL layer are connected electrically in series. Both ac and dc voltages are applied across the combination. The X-ray sensitivity of the converter depends on the dc voltage drop across the PC powder laye... View full abstract»

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  • Energy flow relations in multiwave systems with absorption and dispersion

    Publication Year: 1972, Page(s):239 - 245
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (712 KB)

    Expressions for the time average energy flow are derived for a linear physical system with an arbitrary number of interacting waves. The system is assumed to be temporally and spatially dispersive and to include losses. Waves constant in time but growing or decaying in space with arbitrarily large factors are considered. The results are used to discuss the energy flow components in a traveling-wav... View full abstract»

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  • Emitter avalanche currents in gated transistors

    Publication Year: 1972, Page(s):245 - 250
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (656 KB)

    The creation of interface states and the trapping of charge in the oxide during avalanche breakdown of the emitter-base (e-b) junction of planar transistors was studied. Two types of n-p-n transistors, differing in the amount of boron in the base region, were investigated. The creation of interface states was largest in the transistors with a higher concentration of boron in the base region, proba... View full abstract»

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  • Oscillation mechanism of avalanche region of the IMPATT diode

    Publication Year: 1972, Page(s):251 - 256
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (384 KB)

    The oscillation mechanism of the avalanching region of the IMPATT diode is clarified by referring to the cavity resonator and feedback theories. When the avalanche takes place, the microwave electric field and the particle currents grow spacially. But the spacial growth does not directly mean the self-oscillation, as there exists the reflection loss at the region edges. When the gain due to the av... View full abstract»

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  • A microwave-biased millimeter- and submillimeter- wave detector using InSb

    Publication Year: 1972, Page(s):257 - 267
    Cited by:  Papers (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1034 KB)

    A high-purity n-type indium antimonide sample mounted in a reentrant cavity and cooled to 4.2°K was operated as a millimeter-wave detector. The scheme utilizes a downconversion process and free-carrier absorption is the mechanism responsible for the detection process. Power applied at the millimeter-wave frequency causes a change in the material conductivity which in turn causes a change in t... View full abstract»

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  • Ion-implanted hyperabrupt junction voltage variable capacitors

    Publication Year: 1972, Page(s):267 - 273
    Cited by:  Papers (6)  |  Patents (6)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (734 KB)

    Voltage variable capacitors have been fabricated using ion implantation and a PtSi Schottky barrier to obtain a high degree of control over the doping in a hyperabrupt diode structure. Three methods for obtaining the desired doping in the hyperabrupt region have been investigated, including diffusion from a low energy predeposition and higher energy implantations with no diffusion. TheC-V View full abstract»

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  • Theory and experiments on surface 1/f noise

    Publication Year: 1972, Page(s):273 - 285
    Cited by:  Papers (89)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1240 KB)

    A theoretical low-frequency noise model for the epitaxial-channel surface field-effect structure is presented where random modulation of the channel conductance arises from fluctuation of charges trapped at the oxide trap states near the Si-SiO2interface. In this model, charge fluctuation in the oxide traps arises from carrier tunneling between the fast interface surface states and the ... View full abstract»

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  • Calculation of electron drift velocity at Si avalanche

    Publication Year: 1972, Page(s):285 - 286
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (247 KB)

    In evaluating the electron drift velocity at Si avalanche, the electron distribution is obtained by solving the Boltzmann transport equation in the maximum anisotropy truncation (MAT) approximation of Baraff. Improvements are made to the MAT procedure so that the symmetrical part of the distribution function can be obtained in a straightforward manner. The temperature dependence of electron drift ... View full abstract»

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  • On the removal of the memory properties of MNOS devices

    Publication Year: 1972, Page(s):287 - 288
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    Results are presented to support the contention that the memory properties of MNOS and MNS devices are due to crystalline areas in the nitride. The memory effect was found to disappear when the crystalline areas were removed by ion implantation techniques. View full abstract»

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  • Thermal switching in chalcogenide glasses

    Publication Year: 1972, Page(s):288 - 289
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    The pressure and frequency dependences of threshold voltage and delay time in chalcogenide glasses have been analyzed by means of a previously developed thermal model. Good agreements with experimental observations confirm further the speculation of thermally assisted switching in semiconducting glasses. In addition, a brief discussion on several aspects of the postswitching phenomena, using the s... View full abstract»

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  • Transferred-electron oscillator mode decisions from their df/dV and df/dT

    Publication Year: 1972, Page(s):289 - 290
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (272 KB)

    Illustrations are given of the complex behavior that occurs when a transferred-electron oscillator is subjected to a change of bias voltage or temperature. It is concluded that a mode decision procedure based on such information would be ambiguous. View full abstract»

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Aims & Scope

IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects.

 

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Meet Our Editors

Editor-in-Chief

Giovanni Ghione
Politecnico di Torino,
10129 Torino, Italy

Phone +39 011 090 4064
email giovanni.ghione@polito.it