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IEEE Transactions on Electron Devices

Issue 1 • Jan. 1972

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Displaying Results 1 - 25 of 26
  • [Front cover and table of contents]

    Publication Year: 1972, Page(s): c1
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    Freely Available from IEEE
  • A comparison of two transistor models

    Publication Year: 1972, Page(s):1 - 3
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (272 KB)

    The equivalence of Gummel's [1] charge control model and Schilling's [2] regional model for a one-dimensional bipolar transistor is demonstrated. View full abstract»

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  • Design considerations for high-voltage overlay annular diodes

    Publication Year: 1972, Page(s):4 - 8
    Cited by:  Papers (10)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (560 KB)

    The physical parameters necessary to achieve high breakdown voltages in planar diodes with metal junction overlay and annular guard rings are considered. The experimental data are derived from p-ν-n structures with ν resistivity greater than 300 Ω . cm and the primary parameters considered are the extent of junction overlay metallization, the effect of lateral junction curvature, th... View full abstract»

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  • Harmonic distortion in the junction field-effect transistor with field-dependent mobility

    Publication Year: 1972, Page(s):9 - 13
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (435 KB)

    It has been found that a harmonic analysis of the usual power-law transfer characteristic of the JFET does not yield equations which accurately predict the third-harmonic distortion products for short-gate structures. However, if field-dependent mobility in the drain-source channel is taken into consideration in the equations for the drain current, a transfer characteristic is obtained of the form... View full abstract»

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  • Impact ionization in bulk GaAs high field domain

    Publication Year: 1972, Page(s):14 - 21
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (849 KB)

    An investigation of impact ionization in the high field domains of GaAs Gunn effect devices has been carried out. A method of measuring the number of excess electrons generated per domain transit was developed, based on the measurement of the increase in the valley current from one domain transit to the next while impact ionization is occurring in the domain. This method was used to experimentally... View full abstract»

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  • Computer optimized design of pulsed Gunn oscillators

    Publication Year: 1972, Page(s):21 - 26
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (503 KB)

    The usefulness of computer simulation in the empirical design of a simple Gunn diode oscillator was investigated with encouraging results. The optimum design of a 5-GHz oscillator is discussed in detail. The results do not support Copeland'sN/fscaling criterion. It is also shown that a doping profile favoring dipole space-charge formation is not necessarily at a disadvantage when compar... View full abstract»

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  • Effects of doping profile on the conversion efficiency of a Gunn diode

    Publication Year: 1972, Page(s):26 - 37
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1279 KB)

    A large-signal computer simulation was made for several simplified nonuniform doping profiles that correspond to those of practicalX-band Gunn diode. Maximum available dc-to-RF conversion efficiency was searched for each profile by varying the oscillation frequency and the magnitude of the RF terminal voltage while the dc bias was fixed. The result showed that a higher-resistance cathod... View full abstract»

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  • Microminiature ganged threshold accelerometers compatible with integrated circuit technology

    Publication Year: 1972, Page(s):37 - 40
    Cited by:  Papers (43)  |  Patents (7)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (712 KB)

    The device described permits threshold acceleration detection in a wide range from a few ten's of g's up to maybe 100 000 g's. It is a threshold sensing device with an extremely high on-to-off resistance ratio. The device consists of a flexible metal beam and an associated contact pad, which is activated by the force of the beam's inertial mass when being accelerated in a direction normal to the c... View full abstract»

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  • Steady-state junction temperatures of semiconductor chips

    Publication Year: 1972, Page(s):41 - 44
    Cited by:  Papers (88)  |  Patents (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (288 KB)

    The temperature drop between a transistor junction and the base of a silicon chip is dependent upon the power to be dissipated as well as the geometry of the device. This problem in three-dimensional heat conduction is analytically solved for boundary conditions which approximate a set of operating conditions. Nondimensional curves and examples summarizing typical solutions have been included to i... View full abstract»

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  • D-MOS transistor for microwave applications

    Publication Year: 1972, Page(s):45 - 53
    Cited by:  Papers (99)  |  Patents (11)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (904 KB)

    A new n-channel silicon MOS transistor is described that can be fabricated with channel lengths of less than 1 µ by using a double-diffusion process similar to that used in bipolar transistor fabrication. The dimensional tolerances are not tighter than those used in the processing of conventional MOS transistors. This device (called D-MOST) shows gain in the GHz range and a noise figure compa... View full abstract»

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  • Performance of refractory metal multilevel interconnection system

    Publication Year: 1972, Page(s):54 - 61
    Cited by:  Papers (19)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1624 KB)

    High-temperature multilevel interconnection systems are discussed from a materials fabrication, yield, and circuit performance point of view. Refractory metal interconnections are compared to diffused Si planar runs and heavily doped polycrystalline Si films. Circuit configurations and their relative importance for these material-circuit performance considerations are considered. All of the high-t... View full abstract»

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  • The VfTrelation of CW Gunn-effect devices

    Publication Year: 1972, Page(s):62 - 70
    Cited by:  Papers (11)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (784 KB)

    Theoretical device simulations and experimental results are presented to show that the origin of an empirical relationship between the bias voltage and transit frequency of CW longitudinal Gunn-effect devices lies in a combination of space-charge propagation effects and thermal effects. The bias current-voltage relationship is considerably altered by the particular details of the device doping pro... View full abstract»

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  • Limitations on millimeter-wave power generation with spiraling electron beams

    Publication Year: 1972, Page(s):71 - 79
    Cited by:  Papers (9)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (856 KB)

    A study is made of the suitability of the interaction between a thin, solid, spiraling electron beam of 5-15-kV energy and a microwave cavity, for the purpose of generating watts of CW millimeter-wave power. The effect of finite energy spread in the electron beam is considered both theoretically and experimentally. Measured results are given for a prototype device operating at 9.4 GHz. Power outpu... View full abstract»

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  • A modified conical cavity for submillimeter wave applications

    Publication Year: 1972, Page(s):80 - 85
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (489 KB)

    The conical cavity has been modified for use in electron beam devices. In this new cavity resonator a short radial line section couples the beam hole with the conical region providing a suitable interaction gap. Operated in a higher order TM0p0mode the cavity size is large compared to wavelength making it attractive for millimeter or submillimeter applications. In this mode, both Q... View full abstract»

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  • A 2-kW multioctave TWT focused with samarium cobalt magnets

    Publication Year: 1972, Page(s):86 - 89
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (552 KB)

    The most severe and fundamental performance limitation of the PPM focused TWT has been excessive thermal heating of the RF propagating structure due to some fractional interception of the electron beam. The quality of beam focusing has largely been determined by the characteristics of permanent magnets in the Alnico series. With the introduction of the cobalt-rare earth alloys, a breakthrough in t... View full abstract»

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  • Modeling of avalanche effect in integral charge control model

    Publication Year: 1972, Page(s):90 - 97
    Cited by:  Papers (39)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (632 KB)

    A compact model for bipolar transistors (integral charge control model) which includes many high-level effects has recently been developed. This model has been shown to give much more accurate results than the conventional Ebers-Moll model. However, avalanche effects have not been included previously. Here a simple expression is developed for the avalanche current generated in the collector juncti... View full abstract»

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  • A solid-state infrared image converter

    Publication Year: 1972, Page(s):98 - 103
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1024 KB)

    A photoconductor-electroluminescent type infrared image converter panel has been studied through the application of doped CdSe photoconductive powder layers of different thickness to the earlier type of image converter and through temperature operation. The spectral sensitivity extended from 0.7 to 1.2 µm with sensitivity peak at 0.9 µm and the minimum detectable input power density reac... View full abstract»

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  • The tilted electric field soft-landing collector and its application to a traveling-wave tube

    Publication Year: 1972, Page(s):104 - 110
    Cited by:  Papers (18)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (704 KB)

    If a collector in a beam-type tube captures all the electrons at almost zero velocity, the tube efficiency will approach unity. Such a collector might be called a soft-landing collector. This paper describes the principle, design theory, preliminary experimentation, and application of a new type collector in which an almost complete soft landing can be realized. The experimental TWT equipped with ... View full abstract»

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  • A ten-stage electrostatic depressed collector for improving klystron efficiency

    Publication Year: 1972, Page(s):111 - 121
    Cited by:  Papers (22)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1064 KB)

    A ten-stage electrostatic depressed collector, designed with the aid of an analog computer, was tested on a 1-kW CW 750-MHz klystron. Excellent correlation was achieved between computed and measured performance under varying conditions of RF drive. At full RF power output approximately 60 percent of the spent beam energy was recovered by use of the depressed collector. The net power conversion eff... View full abstract»

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  • Models for the lateral P-N-P transistor including substrate interaction

    Publication Year: 1972, Page(s):122 - 123
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (280 KB)

    The lateral p-n-p as used in linear integrated circuits has unique interactions with the substrate. Models which illustrate this behavior are shown and compared to the planar n-p-n transistor. View full abstract»

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  • Buckling of thermally-grown SiO2thin films

    Publication Year: 1972, Page(s): 122
    Cited by:  Papers (7)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (168 KB)

    The difference in thermal expansion causes compression in SiO2thermally grown on Si wafers. Unsupported windows of SiO2buckle if the oxide thickness/window width ratio (t/w) is too small. This correspondence presents the experimentally determined t/w ratio for stable films. View full abstract»

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  • CW performance of vapor-grown GaAs transferred electron oscillators

    Publication Year: 1972, Page(s):123 - 125
    Cited by:  Papers (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (408 KB)

    The CW performance of GaAs transferred electron oscillators (TEO) is described. The TEO were fabricated from n+-n-n+epitaxial structures of GaAs grown from the vapor phase. The devices consisted of single mesas, 5-6 mil in diameter, on plated silver heat sinks. Fifteen devices were fabricated from three separate wafers and the results were very uniform. The dc to RF efficienc... View full abstract»

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  • GaAs planar Gunn diodes for DC-biased operation

    Publication Year: 1972, Page(s):125 - 127
    Cited by:  Papers (8)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (496 KB)

    The difficulty in obtaining CW oscillations in GaAs planar Gunn diodes has been found to be due to distortion of the field distribution by a field-enhanced trapping effect. A tapered active region is proposed to compensate for the effect due to the trapping. By adopting the geometry, coherent CW Gunn oscillations have been obtained successfully with reasonable reproducibility. View full abstract»

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  • The effect of boundary conditions on current oscillations in n-type germanium at 77°K

    Publication Year: 1972, Page(s):127 - 128
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (272 KB)

    Recent experimental work on current instabilities and related properties of n-type germanium in high electric fields shows several kinds of instabilities. The purpose of this paper is to show that the differences can be explained by assuming different boundary conditions at the cathode. The method of analysis follows that of Conwell. View full abstract»

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  • Erratum

    Publication Year: 1972, Page(s): 128
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Aims & Scope

IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects.

 

Full Aims & Scope

Meet Our Editors

Editor-in-Chief

Giovanni Ghione
Politecnico di Torino,
10129 Torino, Italy

Phone +39 011 090 4064
email giovanni.ghione@polito.it