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IEEE Transactions on Electron Devices

Issue 12 • Date Dec. 1971

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Displaying Results 1 - 20 of 20
  • [Front cover and table of contents]

    Publication Year: 1971, Page(s): c1
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    Freely Available from IEEE
  • The surface-charge transistor

    Publication Year: 1971, Page(s):1125 - 1136
    Cited by:  Papers (11)  |  Patents (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1288 KB)

    The surface-charge transistor (SCT) is a new active semiconductor device that can be used to store, transport, and control the transport of nonequilibrium surface charge. In its simplest (discrete) form, it consists of two adjacent storage electrodes and an overlapping control electrode. All of these electrodes are separated from each other and the semiconductor surface by a thin insulating film. ... View full abstract»

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  • Electron transmission through a metal target from vacuum to air

    Publication Year: 1971, Page(s):1136 - 1138
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (224 KB)

    An investigation, in connection with work on a direct electron printing tube, has been made on electron beam transmission through a thin nickel target into atmosphere. Comparison with vacuum-to-vacuum transmission measurements indicates that electron multiplication occurs and that such a system can provide a tool for studying ionization processes, as well as act as an ion source. View full abstract»

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  • Analysis of thermal impedance for conventional and beam lead IC chips

    Publication Year: 1971, Page(s):1139 - 1146
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (616 KB)

    The thermal impedance of conventional and beam lead IC packages is evaluated from the partial differential equations, which govern the temperature and heat flow within the chip and substrate, and transmission line analogy. The mounting and the geometry dependance of the thermal impedance for various heat sink and chip sizes are presented for both beam lead and conventional IC packages. The variati... View full abstract»

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  • hFEfalloff at low temperatures

    Publication Year: 1971, Page(s):1146 - 1148
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (288 KB)

    It is shown that for shallow planar bipolar transistors, tunneling, currents through the emitter-base junction can cause pronounced hFEfalloff at low temperatures. View full abstract»

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  • Influence of slip plane dislocations on electrical performances of N-P-N planar transistors

    Publication Year: 1971, Page(s):1148 - 1150
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (256 KB)

    Dislocations have been introduced in a well-controlled way in n-p-n bipolar transistors diffused on ∠111∠ silicon by plastic deformation. Two different geometries have been considered. While the collector current shows the well-known theoretical dependence on emitter-base voltage, the base current is significantly increased and is strongly affected by base surface potential. Low-freque... View full abstract»

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  • Initiation of switching in VO2coplanar devices

    Publication Year: 1971, Page(s):1151 - 1155
    Cited by:  Papers (2)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (384 KB)

    Thin films of VO2have been formed at 400°C by reactive RF sputtering in an argon-oxygen atmosphere. Their resistivity changes by a factor of more than 100 at 68°C. Fabrication of coplanar devices has allowed measurements of the prebreakdown region and the breakdown parameters. When a voltage is applied between the electrodes, the internal temperature rises and the device switc... View full abstract»

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  • Measurement of small-signal parameters in traveling-wave tube theory

    Publication Year: 1971, Page(s):1155 - 1162
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (896 KB)

    An experimental procedure is described which allows the accurate determination of parameters needed to calculate the small-signal gain of traveling-wave tubes using the equivalent transmission-line model of Pierce. A movable electromagnetic probe is used to measure the gain per unit wavelength along the helix and the attenuator and also to measure the initial loss. From these data the gain paramet... View full abstract»

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  • Investigation of corona discharge devices as electrical loads for experimental high-voltage generators

    Publication Year: 1971, Page(s):1163 - 1166
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (392 KB)

    The use of the corona discharge mechanism as a means of providing an electrical load for experimental high-voltage low-current dc generators is investigated. The current-voltage characteristics of several corona discharge configurations, such as point-to-plane, coaxial cylindrical, and wire-to-plane, were experimentally obtained and compared with theoretically predicted values. Of all the configur... View full abstract»

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  • Active-device capacitances

    Publication Year: 1971, Page(s):1166 - 1168
    Cited by:  Papers (7)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (296 KB)

    The charge-control capacitance ∂Q/∂V looking into a device port is not in general equal to the intrinsic small-signal capacitance found from the low-frequency admittance ratios up to 7:1 occur in practice. This paper explains why the discrepancy occurs, and derives the condition for the discrepancy to be zero. Finally, it is shown that charge-control theory does correctly predict the g... View full abstract»

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  • A survey of the present state of microwave transistor modeling and simulation as applied to circuit design

    Publication Year: 1971, Page(s):1168 - 1174
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (744 KB)

    A comprehensive overview of recent approaches to microwave transistor modeling and simulation is presented. Three basic approaches to semiconductor device modeling are compared: the linear two-port model, the device-physics model, and the equivalent circuit model. Equivalent circuit models are discussed in detail with examples. Good solutions to the problem of linear modeling have been found and s... View full abstract»

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  • High-efficiency GaAs transferred electron device operation and circuit design

    Publication Year: 1971, Page(s):1175 - 1184
    Cited by:  Papers (6)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (944 KB)

    In this paper it is shown that a GaAs transferred electron device is adequately described by a simple, static IV characteristic. This characteristic is used in a time domain computer simulation with the microwave circuit represented by transmission line equivalent circuit from which the voltage and current waveforms associated with the device are derived for a particular device IV characteristic a... View full abstract»

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  • A composite model for Schottky diode barrier height

    Publication Year: 1971, Page(s):1185 - 1186
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (232 KB)

    A composite model, which includes both electrostatic screening and an interfacial region, is developed for Schottky diode barrier height. The model is used to calculate barrier height as a function of donor concentration for a gold-on-silicon diode structure. The results show that the influence of electrostatic screening on the barrier height is small and that the barrier height decreases rapidly ... View full abstract»

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  • Noise temperature in silicon in the hot electron region

    Publication Year: 1971, Page(s):1186 - 1187
    Cited by:  Papers (6)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (264 KB)

    The noise temperature as a function of the applied field has been measured on an epitaxial silicon layer at the frequencies 2 GHz and 4 GHz. It has been found that the experimental results are in good agreement with the theory given by Moll. It is shown that for noise calculations in silicon field-effect transistors with pronounced carrier velocity saturation the noise temperature Tnver... View full abstract»

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  • The influence of high magnetic flux densities on electromagnetic focusing of electrons

    Publication Year: 1971, Page(s):1187 - 1188
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (280 KB)

    The resolution of "magnetically focused" image tubes is shown to be relatively constant with increasing magnetic flux density (B) until B exceeds (2/ηΔt), where η is the Electron charge-to-mass ratio and Δt is the transit-time, difference between focused and unfocused electrons. Magnetic flux densities higher than this value give rise to increased electron-optic resolutions, in... View full abstract»

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  • Optimum bias for MIM detectors

    Publication Year: 1971, Page(s):1188 - 1189
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (232 KB)

    It is shown that the maximum responsivity-bandwidth product of MIM detectors is obtained when they are biased at a voltage equal to the anode work function (in volts). The presence of invariant positive space charge increases the magnitude of this maximum. View full abstract»

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  • Shockley's positive conductance theorem for Gunn materials with field-dependent diffusion

    Publication Year: 1971, Page(s):1190 - 1192
    Cited by:  Papers (6)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (280 KB)

    With the field of directions governing the field distribution in Gunn effect materials, it is shown that Shockley's positive conductance theorem is not in contradiction with the static negative resistance (SNR) observed recently when the diffusion coefficient increases with electric field. Although an SNR can be observed under certain boundary conditions, it can only occur if a time-dependent tran... View full abstract»

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  • On the transient scattering of light by pulsed liquid crystal cells

    Publication Year: 1971, Page(s):1192 - 1194
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (344 KB)

    Results obtained from several experiments with liquid crystal cells indicate that a light scattering transient which has been attributed to molecular alignment effects in the nematic liquid crystal material may actually be caused by dynamic scattering. View full abstract»

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  • Discussion of various views on popcorn noise

    Publication Year: 1971, Page(s):1194 - 1195
    Cited by:  Papers (7)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (280 KB)

    Conflicting ideas regarding popcorn (burst) noise are compared. It is shown that it is premature to use a single model or claim for a unique representation and explanation. View full abstract»

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  • [Back cover]

    Publication Year: 1971, Page(s): c4
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    Freely Available from IEEE

Aims & Scope

IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects.

 

Full Aims & Scope

Meet Our Editors

Editor-in-Chief

Giovanni Ghione
Politecnico di Torino,
10129 Torino, Italy

Phone +39 011 090 4064
email giovanni.ghione@polito.it