IEEE Transactions on Electron Devices

Issue 10 • Oct. 1971

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Displaying Results 1 - 25 of 28
  • [Front cover and table of contents]

    Publication Year: 1971, Page(s): c1
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    Freely Available from IEEE
  • The influence of heavy doping on the emitter efficiency of a bipolar transistor

    Publication Year: 1971, Page(s):833 - 835
    Cited by:  Papers (44)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (304 KB)

    The emitter efficiency current gain βγis calculated taking into account the effect of the bandgap decrease caused by heavy doping of the emitter. It is found that this effect reduces the emitter efficiency and explains experimental results on the temperature dependence of the current gain. It also predicts an optimum emitter doping for a given base doping. View full abstract»

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  • Indium phosphide microwave oscillators

    Publication Year: 1971, Page(s):835 - 840
    Cited by:  Papers (3)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (672 KB)

    A detailed examination has been carried out on the characteristics of transferred electron microwave oscillators constructed from epitaxial indium phosphide. Seven slices have been used, for which the layer thicknesses varied between 5.4 and 28 µm. It is shown that the mechanism of oscillation has a transit-time dependence and that the transit velocity which emerges (1.5-2 × 107 View full abstract»

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  • The performance of planar Gunn oscillators in X band

    Publication Year: 1971, Page(s):840 - 843
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (416 KB)

    The microwave performance of planar Gunn oscillators operating in X band has been examined. CW output powers have been limited to 23 mW (2 percent) by high device temperatures. Thermal limitations have been included with space-charge limitations in an examination of the design requirements for planar oscillators and a chart has been drawn up to identify the allowable ranges of epitaxial layer para... View full abstract»

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  • Edge breakdown in mesa diodes

    Publication Year: 1971, Page(s):844 - 848
    Cited by:  Papers (1)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (496 KB)

    An analysis of the current flow in a mesa diode shows that this diode suffers from similar limitations in breakdown voltage as the planar diode due to radial current flow at the diode edge. A theoretical analysis of the breakdown voltage of this structure shows that careful tailoring of the doping profile is essential to obtain bulk breakdown in IMPATT and TRAPATT mesa diodes. Experimental results... View full abstract»

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  • Optimal design of electrostatic lenses using integral equation field methods

    Publication Year: 1971, Page(s):848 - 852
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (472 KB)

    The integral method of solving Laplace's or Poisson's equation results in a formulation for solution which is suitable for directly calculating the change in the domain potentials due to displacing the domain boundaries. Specifically, the order and locations remain the same for the matrix ∂Φ/∂x i.e., the change in potential per boundary change, which is required for the optimum de... View full abstract»

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  • Microwave emission from plasmas in InSb with and without magnetic fields

    Publication Year: 1971, Page(s):853 - 865
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (1289 KB)

    A theory of wave propagation through semiconductors, assuming general orientations of the carrier drift velocities, the propagation vector, and the RF electric field relative to an applied steady magnetic field, is derived. This is specialized to obtain a theory of pseudolongitudinal wave interactions in electron and hole streams in InSb in a transverse and in a parallel (or zero) magnetic field. ... View full abstract»

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  • GaAs LSA V-band oscillators

    Publication Year: 1971, Page(s):866 - 872
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (776 KB)

    GaAs devices verify practical LSA mode operation at V-band frequencies (50-75 GHz). The limitations on power and efficiency are characterized including the dependence of efficiency on electron concentration. The maximum CW power level is 62 mW with an efficiency of 2.2 percent at 64 GHz. The peak power and efficiency is 137 mW and 3.71 percent at 64 GHz for 5 percent duty, pulsed operation. A maxi... View full abstract»

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  • Prism fiber reading tube

    Publication Year: 1971, Page(s):872 - 878
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (728 KB)

    A prism fiber reading tube (PFT) for fast facsimile has been developed. It features a new type of prism-shaped glass fiber which makes direct contact reading possible. This newly developed tube is capable of reading opaque original manuscripts, a procedure not possible with an ordinary fiber-optics tube. By electronic scanning, a manuscript can be read at television scanning speeds. The resolution... View full abstract»

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  • Characterization of aluminum-alloyed contacts by diode recovery measurements

    Publication Year: 1971, Page(s):878 - 881
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (400 KB)

    On silicon diodes possessing a base width to minority carrier diffusion length ratio around one and aluminum-alloyed contacts, a dependence of storage times from absolute values of forward and reverse currents is observed which can be described by a constant leakage current. To explain this phenomena it is not possible to characterize this type of contact with a single recombination velocity. A fo... View full abstract»

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  • Flicker noise in metal semiconductor Schottky barrier diodes due to multistep tunneling processes

    Publication Year: 1971, Page(s):882 - 887
    Cited by:  Papers (7)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (576 KB)

    In a practical metal semiconductor Schottky barrier diode there is a certain amount of current flow by indirect tunneling through the barrier. Although this component of current is negligibly small compared to the thermionic emission or thermionic field emission current, a large low-frequency 1/f noise is associated with this multistep tunneling process. The multistep tunneling current introduces ... View full abstract»

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  • Characterization of low 1/f noise in MOS transistors

    Publication Year: 1971, Page(s):887 - 891
    Cited by:  Papers (108)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (477 KB)

    By careful processing MOS transistors have been fabricated with a low value of the interface states density (2 × 1010/cm2eV). Consequently the1/fnoise in these devices is low and in the same order of magnitude as for junction FETs. The experimental values of the equivalent noise voltage and the equivalent noise current are compared to an expression derived fro... View full abstract»

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  • Analysis of a dielectrically loaded traveling wave tube

    Publication Year: 1971, Page(s):892 - 897
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (504 KB)

    A circular waveguide periodically loaded with dielectric disks forms a slow wave structure which can be used in a traveling wave tube. For solid disks, the field pattern in the guide can be determined exactly and the characteristics of the structure, when used as a traveling wave tube, can be predicted using Pierce's small signal theory. The gain, bandwidth, operating frequency, and required beam ... View full abstract»

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  • Normal mode theory for acoustic waves and its application to the interdigital transducer

    Publication Year: 1971, Page(s):898 - 908
    Cited by:  Papers (43)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (1032 KB)

    A normal mode expansion for the analysis of acoustic-wave problems is given. The expansion is based on orthogonality relations between the modes of an acoustic wave, and makes it possible to relate the perturbation and propagation constant of a particular mode to the properties of the modes of the unperturbed system, and of the perturbation. The use of the general expansions is then demonstrated b... View full abstract»

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  • A normal mode theory for the Rayleigh wave amplifier

    Publication Year: 1971, Page(s):909 - 920
    Cited by:  Papers (33)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (1288 KB)

    A Rayleigh acoustic wave traveling on the surface of a semi-infinite piezoelectric medium may be amplified by interaction with drifting carriers in an adjacent semiconductor. The gain and frequency response of this interaction is determined here by using a normal mode expansion of the Rayleigh wave piezoelectric fields. The configuration which uses a thin semiconductor film supported by a semi-inf... View full abstract»

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  • 100-kV Hydrogen thyratron without gradient grids

    Publication Year: 1971, Page(s):920 - 924
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (640 KB)

    A high-power hydrogen thyratron grid-anode structure has been developed using a 5949 thyratron cathode assembly. One such device was operated for 10 h at 2000 A, 32 kV, at 1400 pps with a pulse width of 0.3 µs. Another was operated for periods up to 220 h at 1000 A, 100 kV, at a duty cycle of 0.00004. The duty cycle is presently limited by our test modulator circuit. Trigger requirements are ... View full abstract»

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  • Optimum design of low-noise lower sideband parametric up-converters

    Publication Year: 1971, Page(s):924 - 931
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (744 KB)

    An analysis has been carried out on a lower sideband parametric up-converter to determine the values of the source and load resistances and frequency ratio giving minimum noise figure at a specified value of gain. A similar analysis has been conducted for maximum gain-bandwidth product. The design requirements for minimum noise figure are found to differ from those for maximum gain-bandwidth produ... View full abstract»

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  • The P-channel refractory metal self-registered MOSFET

    Publication Year: 1971, Page(s):931 - 940
    Cited by:  Papers (21)  |  Patents (2)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (1888 KB)

    In this paper p-channel self-registered Mo gate MOSFET fabrication techniques are described and tested. Excellent p-channel devices resulted. Device characteristics including junction characteristics, threshold, stability, effective channel mobilities, and Si-SiO2interface studies are examined and compared with theoretical predictions. Simple processing steps yielded FETs whose threshol... View full abstract»

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  • Incomplete charge transfer in IGFET bucket-brigade shift registers

    Publication Year: 1971, Page(s):941 - 950
    Cited by:  Papers (14)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (920 KB)

    The time evolution of the charge transfer during one half-cycle of operation of an IGFET bucket-brigade dynamic shift register is calculated analytically for a smooth but otherwise arbitrary voltage driving function. Wentzel-Kramers-Brillouin-Jeffreys (WKBJ) solutions to the charge transfer equation are matched to Airy-function solutions in the current cutoff region to determine the charge transfe... View full abstract»

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  • A ferroelectric-piezoelectric random access memory

    Publication Year: 1971, Page(s):951 - 958
    Cited by:  Papers (2)  |  Patents (2)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (840 KB)

    A two-dimensional ferroelectric memory array is combined with a piezoelectric interrogation technique to provide a memory device with nonvolatile storage, random access, non-destructive readout and compatibility with integrated circuits. Binary information is stored as either a positive or negative polarization state in ferroelectric ceramic material and is read out by sensing the polarity of the ... View full abstract»

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  • Electrical measurements in nematic liquid crystals

    Publication Year: 1971, Page(s):959 - 964
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (397 KB)

    This paper considers the influence of several parameters on the current through a nematic liquid crystal cell. The dependence of the current on the average fieldV/d, whereVis the voltage anddthe thickness of the nematic film, does not prove the existence of Schottky emission or field-assisted dissociation. We have measured the electric field distribution in a thick... View full abstract»

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  • The influence of debye length on the C-V measurement of doping profiles

    Publication Year: 1971, Page(s):965 - 973
    Cited by:  Papers (194)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (796 KB)

    The doping profile of a semiconductor is given only approximately by the conventional analysis ofC-Vmeasurements. The present study employs computer simulation of semiconductors with one-sided doping profiles that consist of high and low doped sections joined by steps and linear ramps. The computation yields the apparent doping profile that would be obtained by the conventional use of View full abstract»

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  • Thermal resistance measurement of avalanche diodes

    Publication Year: 1971, Page(s):973 - 975
    Cited by:  Papers (3)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (368 KB)

    A new method of thermal resistance measurement is presented. The variation of diode breakdown voltage with input power as a function of time is the basis of the method. Diode space-charge resistance and series resistance together with separate components of heat-flow resistance are measured using this method. The technique of the measurement is straightforward and provides results with little ambi... View full abstract»

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  • Inductance properties of oxidized vanadium foils

    Publication Year: 1971, Page(s):975 - 976
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (226 KB)

    We have observed inductance effects as well as current-controlled switching in oxidized vanadium foils at room temperature. The inductance was found to be strongly dependent upon dc bias current, but independent of frequency. For the case of zero dc bias, inductances in excess of 100 mH were observed; however, theQof the structure was quite low. View full abstract»

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  • Comments on "Electronic image storage utilizing a silicon dioxide target"

    Publication Year: 1971, Page(s):977 - 978
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (167 KB)

    It is shown that, contrary to the statements in the above paper, the secondary emission yield of thermally grown SiO2does not saturate. Rather, the results reported fall on a yield curve which peaks at a yield of 7.4 at a primary electron energy of 500 eV. View full abstract»

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Aims & Scope

IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects.

 

Full Aims & Scope

Meet Our Editors

Editor-in-Chief

Giovanni Ghione
Politecnico di Torino,
10129 Torino, Italy

Phone +39 011 090 4064
email giovanni.ghione@polito.it