Scheduled System Maintenance
On Saturday, October 21, single article sales and account management will be unavailable from 6 AM-6 PM ET.
Notice: There is currently an issue with the citation download feature. Learn more.

IEEE Transactions on Electron Devices

Issue 8 • Aug. 1971

Filter Results

Displaying Results 1 - 25 of 26
  • [Front cover and table of contents]

    Publication Year: 1971, Page(s): c1
    Request permission for commercial reuse | PDF file iconPDF (650 KB)
    Freely Available from IEEE
  • Papers from the seventh IEEE photovoltaic specialists conference

    Publication Year: 1971, Page(s):457 - 458
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (280 KB)

    First Page of the Article
    View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Electrochemically passivated contacts for silicon solar cells

    Publication Year: 1971, Page(s):459 - 464
    Cited by:  Papers (3)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (848 KB)

    Electrochemically passivated Ti(Pd)Ag contacts for Si solar cells have been developed. The passivation is accomplished by shifting the electrochemical exchange potential of the Ti/Ag couple into positive direction by the addition of a layer of Pd between the Ti and the Ag layers. The new contacts do not degrade during humidity stress tests. They withstand temperature cycling from -- 196°C to ... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Photovoltaic effects in graded bandgap structures

    Publication Year: 1971, Page(s):465 - 471
    Cited by:  Papers (4)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (584 KB)

    A theory of photovoltaic effects in nonhomogeneous semiconductors which takes into account the variations of bandgap, effective masses, mobilities, majority carrier concentrations, and pair lifetime is presented. The photovoltaic effects observed on graded-composition CdxHg1-xTe single crystals are essentially due to the gradient of gap, but are strongly reduced by the diffus... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • The photovoltaic effect in the Cu—Cd—S system

    Publication Year: 1971, Page(s):471 - 482
    Cited by:  Papers (4)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1354 KB)

    Models of the photovoltaic cell proposed by various authors are subjected to a critical examination to isolate their underlying assumptions and to devise possible experimental tests of the models. The results of an investigation of a model in which the Cu2S layer plays an active role are presented. These include a calculation of spectral response and a comparison of calculated and measu... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Electrical output of shadowed solar arrays

    Publication Year: 1971, Page(s):483 - 490
    Cited by:  Papers (51)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (824 KB)

    The effects of shadows on the current-voltage characteristics of solar cell circuits are studied and used for the development of several mathematical models. These models describe circuits of any geometry with or without shunt or blocking diodes. For efficient analyses of larger arrays the concept of the shadowing factor is developed. All models are useful in analyses performed by hand or digital ... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Environmental assessment of thin silicon solar cells from pilot production

    Publication Year: 1971, Page(s):491 - 506
    Cited by:  Papers (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1296 KB)

    Following the earlier demonstration of the performance capabilities of 4-mil silicon solar cells and the feasibility of using these cells on large flexible arrays of space vehicles, more than a thousand 4-mil cells have been fabricated in pilot production by four routes. The various types of cells that have been evaluated had solderless evaporated titanium-silver contacts in both a conventional an... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Solar cell degradation experiments on the Lincoln laboratory LES-4 and LES-5 satellites

    Publication Year: 1971, Page(s):507 - 511
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (504 KB)

    The Lincoln Laboratory satellites LES-4 and LES-5 each carry solar cell experiments consisting of the following. VocMeasurement of 10 Ω . cm silicon cell with 30-mil cover slide. IscMeasurement of 10 Ω . cm silicon cell with 30-mil cover slide. IscMeasurement of 10 Ω . cm silicon cell with 6-mil cover slide. IscMeasurement of two CdTe thin... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Transverse-wave tubes as high-efficiency microwave amplifiers

    Publication Year: 1971, Page(s):511 - 520
    Cited by:  Papers (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (992 KB)

    The theory of microwave tubes using cyclotron- and synchronous-wave interactions is reviewed, and an analysis is presented of the energy exchange mechanism and the axial-beam velocity spread induced by the RF interactions in transverse-wave traveling-wave tubes. The analysis of the energy spread in a realistic model of the beam shows that the maximum efficiency attainable (with collector depressio... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Electron optical properties of a postdeflection acceleration lens in cathode-ray tubes for oscilloscopes of high-bandwidth capability

    Publication Year: 1971, Page(s):521 - 524
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (352 KB)

    A postdeflection acceleration lens (PDAL) for use in high-sensitive fast-writing CRTs is described. The lens achieves a vertical scan magnification of about 2.8 and a horizontal of about 2.2. After a discussion of the principle of operation a detailed investigation of defection linearity and distortion is given. A computer was used to calculate deflection linearity and distortion whereas experimen... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • The epi channel switch

    Publication Year: 1971, Page(s):525 - 527
    Cited by:  Papers (2)  |  Patents (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (523 KB)

    The processing steps to build and the operation of a novel complementary device structure are discussed. The device achieves both a six times improvement ing_{m}/C_{g}figure of merit by a 2.5-to-1 reduction in channel length and a packing density on the order of 1 × 105gates/in2as a result of its vertical construction. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Voltage-controlled crystal oscillators

    Publication Year: 1971, Page(s):528 - 535
    Cited by:  Papers (7)  |  Patents (14)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (728 KB)

    The quartz crystal oscillator is normally thought of as a stable generator of a fixed frequency. It is possible, however, to design and construct voltage tunable quartz crystal oscillators that can be electrically tuned over a frequency range on the order of ±0.3 percent of the crystal frequency. This is accomplished with a nonlinearity between frequency and voltage on the order of 0.1 percen... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Power-impedance-frequency limitations of IMPATT oscillators calculated from a scaling approximation

    Publication Year: 1971, Page(s):536 - 543
    Cited by:  Papers (9)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (664 KB)

    The obtainable CW power of silicon IMPATT oscillators, as a function of frequency, is calculated by scaling from reference results. The analysis differs from previous treatments in that the microwave circuit impedance limitation, as observed experimentally, is utilized simultaneously with thermal impedance limitations to uniquely determine device diameter, operating currents, and output power. Res... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • A self-consistent large-signal analysis of a read-type IMPATT diode oscillator

    Publication Year: 1971, Page(s):544 - 550
    Cited by:  Papers (7)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (720 KB)

    A self-consistent one-dimensional large-signal analysis of a Read-type IMPATT diode oscillator has been developed which takes into account the device-circuit interaction. The circuit is modeled by a lumped-equivalent network representing the diode package, and a cascade of lossless transmission lines with discontinuity capacitances representing the coaxial-line cavity with tuning slugs. A particul... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Guidelines for the design of high-efficiency mode avalanche diode oscillators

    Publication Year: 1971, Page(s):550 - 556
    Cited by:  Papers (4)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (776 KB)

    In this paper, we have developed a set of guidelines for the design of high-efficiency mode avalanche diode oscillators, based on the previously published theory of this mode. An important feature in the development is the "design triangle"--an area in design space which is compatible with the existence of a set of waveforms characterized by efficiencies of up to 60 percent. The particular subregi... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Thermal effects in the bias circuit frequency modulation of Gunn oscillators

    Publication Year: 1971, Page(s):557 - 562
    Cited by:  Papers (4)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (624 KB)

    Observations have been made of the relation between temperature and bias-induced frequency variations of CW X-band Gunn oscillators. The results indicate that a large part of the frequency modulation through the bias circuit at modulation frequencies below approximately 1 MHz can be caused by modulation of the device temperature. Other modulation processes also occur. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • A switching lateral transistor

    Publication Year: 1971, Page(s):563 - 570
    Cited by:  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (712 KB)

    A switching phenomenon has been reported in certain lateral geometry transistors in silicon integrated circuits. These devices switch between conducting and nonconducting states at a critical value of VCE. A hypothesis for the mechanism has been proposed. In this paper an equivalent circuit is developed for the switching lateral transistor and is used to predict transistor behavior. The... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Degradation of hFEat moderate current levels

    Publication Year: 1971, Page(s):570 - 573
    Cited by:  Papers (1)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (408 KB)

    Degradation of moderate current hFEunder high-temperature reverse bias has been noted in 20-30 percent of the n-p-n transistors examined in this study and this type of degradation is shown to be accompanied by a decrease in neutral region minority carrier lifetime within the active base. It has been found that n-p-n's which have degraded can be partially, and in some instances, complete... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Numerical analysis of a forward-biased step-junction P-L-N diode

    Publication Year: 1971, Page(s):574 - 586
    Cited by:  Papers (5)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1136 KB)

    Exact numerical steady-state solutions are presented for a forward-biased step-junction one-dimensional p+-n-n+rectifier over a current range of 10-2to 104A/cm2The versatility of the numerical approach is demonstrated by the inclusion in the physical model of injection-dependent carrier lifetimes due to Auger recombination or injection-depende... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Plane-wave approximation of carrier waves in semiconductor plates with nonisotropic mobility

    Publication Year: 1971, Page(s):587 - 591
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (568 KB)

    Starting from the two-dimensional carrier-wave theory of Kino and Robson the minimum thickness of a semiconductor plate that is able to support an approximate plane wave with the dispersion relation being practically equal to that of the one-dimensional theory is estimated. In the limit of small external permittivity such a plane wave is approximated by the fundamental lateral mode, whereas in the... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Lateral photodetector operating in the fully reverse-biased mode

    Publication Year: 1971, Page(s):591 - 596
    Cited by:  Papers (45)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (488 KB)

    A one-dimensional model of a reverse-biased lateral photodetector is analyzed. The effect of background illumination is considered. An ac equivalent circuit for the device is derived. From this equivalent circuit the transient response is calculated and device parameters that determine its characteristics are presented. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • An acoustoelectric transistor

    Publication Year: 1971, Page(s):597 - 603
    Cited by:  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (760 KB)

    A new kind of three-terminal amplifying device that works on the principle of nonlinear acoustic wave amplification is described. The device has an advantage of simple transistor-like operation while maintaining the long delay times of an acoustic wave amplifier. A piezoelectric semiconductor with three ohmic contacts forms the basic unit; transducers are not required. A theory of device operation... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • The cascode JFET as a means to avoid excess gate current

    Publication Year: 1971, Page(s):603 - 604
    Cited by:  Patents (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (248 KB)

    This correspondence reports on the optimal design of a cascode JFET to achieve high transconductance and low gate current. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • A reverse recovery measurement of carrier lifetime suitable for bidirectional switches

    Publication Year: 1971, Page(s): 605
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (136 KB)

    A pulse method of measuring effective carrier lifetime in bidirectional thyristors from their recovery current is presented. Results obtained by this method are correlated with measured turnoff time for a group of 10 A rms devices. Suggested circuit component values are given to extend capability for higher current devices. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Correction to "A note on the semiconductor current flow equations"

    Publication Year: 1971, Page(s): 605
    Request permission for commercial reuse | PDF file iconPDF (136 KB)
    Full text access may be available. Click article title to sign in or learn about subscription options.

Aims & Scope

IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects.

 

Full Aims & Scope

Meet Our Editors

Editor-in-Chief

Giovanni Ghione
Politecnico di Torino,
10129 Torino, Italy

Phone +39 011 090 4064
email giovanni.ghione@polito.it